A5100786723- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Ga2O3 and related materials
- ZnO doping and properties
- Graphene research and applications
- Semiconductor Quantum Structures and Devices
- Silicon and Solar Cell Technologies
- Chalcogenide Semiconductor Thin Films
- Nanowire Synthesis and Applications
- solar cell performance optimization
- 2D Materials and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Gas Sensing Nanomaterials and Sensors
- Semiconductor materials and interfaces
- Acoustic Wave Resonator Technologies
- MXene and MAX Phase Materials
- Metal and Thin Film Mechanics
- Conducting polymers and applications
- Perovskite Materials and Applications
University of Science and Technology Beijing
2015-2020
Plasma-enhanced atomic-layer-deposited GaN thin-films have been introduced into planar perovskite solar cells as electron transport layers.
Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN investigated. Under saturated conditions, the clearly resolved fringes are observed from X-ray reflectivity (XRR) measurements, showing perfectly smooth interface between film and (100). It is consistent with high-resolution image of sharp analyzed transmission electron microscope (TEM). The highly uniform thickness...
A method for suppressing impurities in GaN thin films grown via plasma-enhanced atomic deposition (PEALD) through the situ pretreatment of Si (100) substrate with plasma was developed. This approach leads to a superior GaN/Si interface. After pretreatment, thickness interfacial layer between and substrates decreases from 2.0 1.6 nm, oxygen impurity content at interface reduces 34 12%. The pretreated exhibit thinner amorphous transition 5.3 nm comparison those nonpretreated 18.0 which...
The growth of high-quality epitaxial gallium nitride (GaN) thin films is achieved by using a baking and plasma pretreatment the substrate prior to GaN plasma-enhanced atomic layer deposition (PE-ALD). It found that such makes grow coherently on sapphire substrates, following layer-by-layer mechanism. deposited film shows high crystalline quality, sharp GaN/sapphire interface, flat surface. possibility growing epilayers in this way broadens range applications for PE-ALD GaN-based devices.
Polycrystalline gallium nitride (GaN) thin films were deposited on Si (100) substrates via plasma-enhanced atomic layer deposition (PEALD) under optimal parameters. In this work, we focus the research of GaN/Si interfacial properties. The x-ray reflectivity measurements show clearly-resolved fringes for all as-grown GaN films, which reveals a perfectly smooth interface between film and (100), feature sharp is further confirmed by high resolution transmission electron microscopy (HRTEM)....
A high-brightness III-nitride nanoemitter array was achieved with an ultrahigh resolution of 31 750 dpi for smart displays, advanced optical imaging, big-data information, and micro/nano opto-electro-mechanical systems.
InN thin films were grown on Si(1 0 0) substrates by plasma-enhanced atomic layer deposition (PEALD). In this work, It is found that the island growth of easily happens at initial PEALD period. The parameters have been systematically investigated to optimize size, density, coalescence and distribution uniformity grains with good crystallinity no metallic indium clustering. Especially, segregation PEALD-grown has a direct dependence temperature (T), supply trimethylindium (TMIn) precursor...
In boron-doped p+–n crystalline silicon (Si) solar cells, p-type boron doping control and surface passivation play a vital role in the realization of high-efficiency low cost pursuit. this study, p+-emitters are formed by diffusion an open-tube furnace using borontribromide (BBr3) as precursor. The emitters characterized detail terms shape profile, concentration, junction depth, sheet resistance removal boron-rich layer (BRL). aspect BRL removal, three different methods were adopted to...
We report a GaInP/GaAs tandem solar cell with novel GaAs tunnel junction (TJ) using tellurium (Te) and magnesium (Mg) as n- p-type dopants via dual-filament low temperature effusion cells grown by molecular beam epitaxy (MBE) at temperature. The test Te/Mg-doped TJ shows peak current density of 21 A/cm(2). the Te/Mg short-circuit 12 mA/cm(2), but open-circuit voltage range 1.4 V similar to 1.71 under AM1.5 illumination. secondary ion mass spectroscopy (SIMS) analysis reveals that Te doping...