T. Matsubara

ORCID: 0009-0006-9734-0408
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About
Contact & Profiles
Research Areas
  • Silicon Nanostructures and Photoluminescence
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Intermetallics and Advanced Alloy Properties
  • Electrodeposition and Electroless Coatings
  • Corrosion Behavior and Inhibition
  • Optical Coatings and Gratings
  • Advanced Surface Polishing Techniques
  • Anodic Oxide Films and Nanostructures
  • Copper Interconnects and Reliability
  • Metal and Thin Film Mechanics
  • Semiconductor Quantum Structures and Devices
  • Nanowire Synthesis and Applications
  • Integrated Circuits and Semiconductor Failure Analysis
  • Aluminum Alloys Composites Properties
  • Analytical Chemistry and Sensors
  • Photonic Crystals and Applications
  • Ion-surface interactions and analysis
  • Quantum and electron transport phenomena
  • Ammonia Synthesis and Nitrogen Reduction
  • Fusion materials and technologies
  • Semiconductor materials and interfaces
  • Silicon and Solar Cell Technologies
  • Advanced ceramic materials synthesis
  • Welding Techniques and Residual Stresses

Orihara Industrial (Japan)
2023

Seikei University
1997-2005

Tohoku University
2002

Osaka University
1996-2001

Denso (Japan)
1992

Kyushu University
1990

Denso (United States)
1990

This work presents a new design of miniaturized microneedle pH sensors based on AgIO3/Ag/polytetrafluoroethylene (PTFE)/WO3/tungsten (W), which can be used to measure the real-time label-free various micro-sized cells and small-volume bodily fluids. The fabrication process comprises multiple steps, including creating W microneedles depositing AgIO3/Ag/PTFE/WO3 layers. A needle-like structure was created at end cleaved rod using electrolytic polishing. sensing layer (working electrode, WE)...

10.1109/tim.2023.3347783 article EN IEEE Transactions on Instrumentation and Measurement 2023-12-28

EDTA, Rochelle salt, and their derivatives have been used so far as the ligand in electroless copper plating. Although these ligands are useful for high-quality plating, a serious drawback is low deposition rate. In attempting to increase rate, authors searched several found that excess TEA effective accelerating This paper reports on effect of triethanol amine (TEA) rate The initially increased with increasing concentration TEA. reached maximum at 0.18 M. After passing maximum, decreased...

10.1149/1.2086819 article EN Journal of The Electrochemical Society 1990-06-01

YAG laser assisted etching techniques were developed and investigated for releasing silicon micro structures. HCl, SF/sub 6/ etc., which produce volatile exhaust, used as gas at atmospheric pressure. The was applied to fabricate an electrostatic microactuator, a resonating sensor accelerometers. This resistless dry can be three-dimensional structures.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

10.1109/memsys.1993.296951 article EN Proceedings, IEEE micro electro mechanical systems 2002-12-30

Porous silicon anti-reflection coatings for substrate, with a reflectance of less than 2% in the spectral range 400–1000 nm, were fabricated. The wide bandwidth operation was realized by introducing smooth refractive index gradation at porous silicon–substrate interface to suppress multiple reflection fringes. Low current density anodization adopted form high layer needed gradation.

10.1002/1521-396x(200011)182:1<461::aid-pssa461>3.0.co;2-w article EN physica status solidi (a) 2000-11-01

We have developed a focused ion beam trimmed write head using Al/sub 2/O/sub 3/ refilling, in which an film was deposited and two-step lapping process performed after FIB trimming at the air bearing surface. This provided highly defined pole edges without any rounded corners, well-filled hollows, damage-free read element. Good environment-proof characteristics were also obtained, because diamond-like carbon as protective layer on element trimming. The fabricated showed good overwrite...

10.1109/20.800884 article EN IEEE Transactions on Magnetics 1999-01-01

Density and level of interface states are accompanied by growth interruption, which is inevitable in an situ process using molecular beam epitaxy (MBE). This MBE coupled with focused ion systems investigated means the Hall measurements capacitance–voltage measurements. The experimental results compared to those self-consistent calculation. These suggest that located at a shallow from conduction band edge.

10.1116/1.590167 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 1998-07-01

Selective anodization characteristics of p+-type Si were studied for substrates with 3 different orientations: (100), (110) and (111). Temporal evolution profiles the etching front periodic porosity modulated visualized by SEM revealed influence anisotropy. The shape fine structures formed selective using circular mask patterns was strongly affected Fine on (100) (111) possessed tips reflecting crystallographic symmetry each wafer. aspect ratio substrate higher than those substrate. origin...

10.1002/pssc.200461180 article EN Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics 2005-06-01

Crystal Si micro-tip arrays were fabricated by selective anodization of p+-type substrate using an n-type doped layer as mask. The use gave rise to sideway with a moderate degree current restriction patterning effect under the mask layer, and triggered formation sharp tip on substrate. A process that allows for fabrication self-aligned gate electrode was also studied. In latter process, through donut-shape window within area prompted surrounding wall top gate.

10.1002/pssa.200306480 article EN physica status solidi (a) 2003-04-30

Article Combustion Synthesis of Intermetallic Compound Al3Ti and its Simultaneous Joining with TiAl was published on February 1, 1999 in the journal International Journal Materials Research (volume 90, issue 2).

10.1515/ijmr-1999-900212 article EN International Journal of Materials Research (formerly Zeitschrift fuer Metallkunde) 1999-02-01

Refractive index lattices with large contrast were fabricated by combining porous silicon lateral patterning. The anodization of a p-substrate periodically spaced n-doped regions produced two-dimensional refractive lattice comprised low and high crystalline regions. Under the lattice, proceeded not only downward but also sideways, extending layer under lattice. This acts as bottom cladding to confine optical waves vertically. A higher air–silicon was applying selective etching or polishing...

10.1002/1521-396x(200011)182:1<443::aid-pssa443>3.0.co;2-w article EN physica status solidi (a) 2000-11-01

Abstract ChemInform is a weekly Abstracting Service, delivering concise information at glance that was extracted from about 100 leading journals. To access of an article which published elsewhere, please select “Full Text” option. The original trackable via the “References”

10.1002/chin.199208035 article EN ChemInform 1992-02-25
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