A position and speed sensorless control using the counter electromotive force of a permanent-magnet motor (PM) debases performance at low speed. We propose controllable system full speed, including zero saliency. At is made by observing current ripple time when alternating voltage has been applied to salient-pole motor. Also, for discriminating S N poles magnet, magnetic saturation used. device rotor allow come about easily. Furthermore, high drive full-speed range accomplished switching...

The facet deterioration of (AlGa)As DH lasers by aging was analyzed Auger electron spectroscopy in combination with Ar sputter etching. It found that oxide formed on the laser during cw operation, and oxidation degraded not only long-term operation but also even at an early stage operation.

Significance Iatrogenic failures of assisted reproduction technology could be associated with routine sperm preparation techniques. Limitations conventional selection methods include the inability to efficiently sort functional spermatozoa and assess fertilization potential. We developed a robust microfluidic sorting system by using diffuser-type sorter device capable ultrahigh-throughput separation motile, DNA-intact, functionally competent sperm. The strategy inclusively targeted intrinsic...

The application of cryopreservation and artificial insemination technology have contributed to the advancement animal reproduction. However, a substantial proportion spermatozoa undergoes alterations loses their fertility during cryopreservation, rendering frozen-thawed semen impractical for routine use. Cryopreservation is known reduce sperm lifespan fertility. Variation in cryosurvival from different sires even with individual sire common (AI) centers. Our goal improve post-thawed quality...

Window-structure AlGaInP visible-light ( λ L =680 nm) laser diodes (LDs) have been fabricated, for the first time, by utilizing GaInP natural superlattice (NSL) disordering with selective Zn diffusion. The bandgap energy active layer near mirror facets is increased 70 meV NSL disordering. An 80 mW output power in a fundamental transverse-mode has achieved uncoated window LDs under 1 µsec long pulsed operations. maximum density estimated to be 10 MW/cm 2 , which five times higher than that...

Room-temperature protonation and metal–insulator conversion of a transition metal oxide (TMO) is demonstrated by all-solid-state thin-film transistor with vanadium dioxide using water-infiltrated nanoporous glass as solid electrolyte. This promising result can provide novel route for TMO-based solid-state electro-optical devices, in particular, smart windows on-demand infrared shielding. As service to our authors readers, this journal provides supporting information supplied the authors....

Insulator-to-metal (MI) phase transition in vanadium dioxide $(\mathrm{V}{\mathrm{O}}_{2})$ thin films with controlled lattice distortion was investigated by thermopower measurements. $\mathrm{V}{\mathrm{O}}_{2}$ epitaxial different crystallographic orientations, grown on $(0001)\phantom{\rule{0.28em}{0ex}}\ensuremath{\alpha}\text{\ensuremath{-}}\mathrm{A}{\mathrm{l}}_{2}{\mathrm{O}}_{3}$,...

Sulfite formation from benzenesulfonate was studied in extracts a bacterium grown on this compound as main carbon source. The activity of sulfite depended the presence NADH and oxygen well magnesium, suggesting an oxygenation-type reaction. found fraction precipitated by ammonium sulfate at 35-50% saturation; specific 15 times higher than that crude extract, probably due to elimination inhibitory substances low molecular weight preparation. In distillate reaction mixture, phenol found....

Degradation mechanism and the related change in lasing characteristics for a mirror degradation were investigated AlGaAs double-heterostructure lasers with uncoated surfaces. In constant optical-power operation, was classified into three phases. The lasing-characteristics initial stage of phase I well explained excitation-enhanced oxidation model. Dark-line defects, originating from surfaces, found final III, following II low rate. dependence also investigated. Marked improvement operating...

The electronic structure across the metal-insulator (MI) transition of electron-doped ${\mathrm{V}}_{1\ensuremath{-}x}{\mathrm{W}}_{x}{\mathrm{O}}_{2}$ epitaxial films ($x=\phantom{\rule{0.16em}{0ex}}0\ensuremath{-}0.06$) grown on $\ensuremath{\alpha}\text{\ensuremath{-}}\mathrm{A}{\mathrm{l}}_{2}{\mathrm{O}}_{3}$ substrates was studied by means thermopower ($S$) measurements. Significant increase $|S|$ values accompanied MI observed, and temperatures $S$ (${T}_{S}$) decreased with $x$ in a...

A long-lasting series of transient rises in intracellular Ca2+ concentration ([Ca2+]i) were recorded with imaging during fertilization bovine eggs matured vivo or vitro. The first response could be zona pellucida-free within 1 min after sperm-egg contact, when a preceding slow [Ca2+]i rise reached 150-170 nM. had the peak 565 ±32 nM (n=15; maximum 780 nM) and duration 4-6 min, being significantly larger longer than any succeeding (359 ± 12 nM, n=68; 2 min). transients occurred at constant...

A position and speed sensorless control scheme using the counter EMF of PM motors debases performance at low speed. Here, authors propose a controllable system full speed, including zero saliency. At is performed by observing current ripple time when an alternating voltage has been applied to salient-pole motor. Also, for discriminating S N poles magnet, magnetic saturation used. device motor rotor allow be brought about easily. Further, times high range drive accomplished switching smoothly...

Lattice defect structure of degraded InGaAsP lasers has been investigated by scanning and transmission electron microscopy. It is found that although dislocation climb motion in slow, slip dislocations parallel to the stripe cause rapid degradation lasers.

Strained InGaAs/AlGaAs double-quantum-well laser diodes (LDs) with GaInP buried waveguides operating at 0.98-1.02 mu m have been developed as light sources for pumping fiber amplifiers. These LDs a flat surface and low-loss real index waveguide that provides high differential quantum efficiency efficient heat dissipation. For 0.98- LDs, stable operation over 10000 h under 100 mW conditions 50 degrees C has achieved, the extrapolated lifetime is estimated to be 60000 C. 1.02- maximum output...

75 mW CW output power was obtained for a transversemode stabilised window-structure 680 nm AlGaInP visible laser diode with non-absorbing mirror facets formed by disordering of GaInP natural superlattice. Stable fundamental mode operations were achieved at up to 70 mW, which is 2.3 times as high previously reported.

We show that the low catastrophic optical damage power density observed for AlGaInP laser diodes (LDs) (1/2 to 1/2.9 of AlGaAs LDs) is mainly attributable high thermal resistivities materials (5.5 times higher than by using a runaway model calculation.

An anisotropy for threshold current densities AlGaInP laser diodes with CuPt-type natural superlattice (NSL) in a Ga0.5In0.5P active layer, grown on (001) GaAs substrate, was observed, the first time. Threshold (Jth) stripes [1̄10] and [110] direction were 1.35 2.10 kA/cm2, respectively. The lasers weak NSL formation layer showed very small Jth. Stripe dependence of electroluminescence (EL) polarization properties also observed well-developed NSL. anisotropies Jth EL are attributed to...

Tight filum terminale (TFT) is not an uncommon condition, but due to insufficient diagnostic options this syndrome often overlooked and left untreated. The present study was designed investigate surgical results concerning neurological perspectives methods for TFT.Subjects consisted of 37 patients with TFT who were surgically treated by transecting the terminale. We examined outcomes regard low back pain, leg bladder bowel dysfunctions, analyzed imaging findings.TFT diagnosis based on...

A high-power 690-nm AlGaInP laser for use in a high-density rewritable-optical-disk memory system is presented. The deterioration of its temperature characteristics, which results from the high-power-oriented structure, improved by using compressively strained GaInP quantum wells as active layer. Output power 40 mW achieved up to 80 degrees C. Stable fundamental-transverse-mode operation obtained 50 mW. Output-power-induced facet degradation suppressed an Al/sub 2/O/sub 3/ coating. lasers...

A new fabrication process has been successfully applied for the first time to AlGaAs/GaAs laser diode. This includes vapor phase etching and subsequent MOVPE regrowth. Self-aligned LD's fabricated by this have shown sufficiently good characteristics ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Ith = 50-60</tex> mA, xmlns:xlink="http://www.w3.org/1999/xlink">\eta_{D} 40-45</tex> percent), reliability (no degradation at least up 1000 h:50°C,...

Sputter-deposited SiO2 films on (AlGa)As DH laser facets were found by chemical erosion tests and Auger spectroscopy to have strong adhesion an abrupt film-facet interface profile. Half-wave coatings sputtering allowed stable long-term operation of lasers over several thousand hours at 10–20-mW (0.7–1.2 mW/μm) power levels room temperature, almost without change from the initial value threshold current optical power.

Infrared (IR) transmittance tunable metal-insulator conversion was demonstrated on glass substrate by using thermochromic vanadium dioxide (VO2) as the active layer in three-terminal thin-film-transistor-type device with water-infiltrated gate insulator. Alternative positive/negative gate-voltage applications induce reversible protonation/deprotonation of VO2 channel, and two-orders magnitude modulation sheet-resistance 49% IR-transmittance were simultaneously at room temperature phase a...