A5111931726- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Neuroscience and Neural Engineering
- Electronic and Structural Properties of Oxides
- Gas Sensing Nanomaterials and Sensors
- Advanced Sensor and Energy Harvesting Materials
- Electrocatalysts for Energy Conversion
- Nanowire Synthesis and Applications
- Analytical Chemistry and Sensors
- Molecular Junctions and Nanostructures
- MXene and MAX Phase Materials
- Gas Dynamics and Kinetic Theory
- Spectroscopy and Laser Applications
- Crystal Structures and Properties
- Fatigue and fracture mechanics
- High Entropy Alloys Studies
- Circular RNAs in diseases
- Dielectric materials and actuators
- GaN-based semiconductor devices and materials
- Corrosion Behavior and Inhibition
- Supercapacitor Materials and Fabrication
- High-Temperature Coating Behaviors
Harbin Institute of Technology
2024-2025
Xiangyang Hospital of Traditional Chinese Medicine
2024
Sichuan University of Science and Engineering
2024
Shenzhen Institute of Information Technology
2024
East China Normal University
2014-2023
Carleton University
2023
State Key Laboratory of Transducer Technology
2016
Nanyang Technological University
2009-2013
Singapore University of Technology and Design
2011-2013
Southeast University
2013
The uncontrollable rupture of the filament accompanied with joule heating deteriorates resistive switching devices performance, especially on endurance and uniformity. To suppress undesirable filaments rupture, this work presents an interface engineering methodology by inducing a thin layer NiOx into sandwiched Al/TaOx/ITO device. NiOx/TaOx barrier can confine formation throughout entire bulk structure under critical bias setups. physical mechanism behind is space-charge-limited conduction...
A high-performance flexible piezoelectric energy harvester based on lead-free nanofibers.
Abstract Metal carbides are considered attractive lithium‐ion battery (LIB) anode materials. Their potential practical application, however, still needs nanostructure optimization to further enhance the Li‐storage capacity, especially under large current densities. Herein, a nanoporous structured multi‐metal carbide is designed, which encapsulated in 3D free‐standing nanotubular graphene film (MnNiCoFe‐MoC@NG). This composite with high surface area not only provides more active Li + storage...
We study the influence of multiple oxygen vacancy traps in percolated dielectric on postbreakdown random telegraph noise (RTN) digital fluctuations HfO2-based metal-oxide-semiconductor transistors. Our electrical characterization results indicate that these are triggered only beyond a certain gate stress voltage. First-principles calculations suggest vacancies to be responsible for formation subband forbidden band gap region, which affects triggering voltage (VTRIG) RTN and leads shrinkage HfO2 gap.
We propose the bipolar-mode operation of resistive random access memory devices in a purely oxygen-vacancy (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> )-controlled regime, which is achieved by very low compliance capping for forming/set transitions. This regime enables us to achieve reset current 10-100 nA, governing mechanism switching only involves reversible drift oxygen ions and from soluble gate electrodes. The physical...
In this paper, the mechanism and physics governing breakdown recovery in metal-gated high-κ (MG-HK) dielectric stacks is investigated. Postbreakdown observed NiSi TiN-gated, but not TaN-gated, HfO2-based logic devices voltage-stress tests. Failure analysis studies reveal that metal-filamentation, besides oxygen vacancies, responsible for of these MG-HK dielectrics. First-principle show 5d orbitals Hf migrated metal atoms filamentation process reduce band gap increase leakage current,...
In this paper, we report a high performance, forming-free and self-rectifying unipolar HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> based RRAM fabricated by fab-available materials. Highlight of the demonstrated include 1) CMOS technology friendly materials process, 2) excellent behavior in LRS (>;10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> @ 1 V), 3) resistive switching, 4) wide read-out margin for density...
The spatial distribution of chemical elements is studied in high-κ, metal-gated stacks applied field effect transistors. Using the transmission electron microscope (TEM)-based analytical techniques energy-loss spectroscopy (EELS) and energy-dispersive x-ray spectroscopy, it demonstrated that Al2O3 La2O3 capping layers show distinctly different diffusion profiles. importance EELS collection angle discussed. Popular models assume La-rich interface are rejected.
Grain boundary (GB) microstructural defects in polycrystalline high-? dielectric thin films may cause localized non-random trap generation during the percolation breakdown (BD) process. We study effect of this on reliability statistics metal gate (MG) - high-κ (HK) stack. For first time, we propose a fundamental physics-based Kinetic Monte Carlo (KMC) model considering thermodynamics and kinetics bond breaking, oxygen vacancy traps simulating evolution process dual-layer HK interfacial layer...
A two-step dealloying combined with CVD method was designed to prepare a multicomponent nanoalloy encapsulated in free-standing nanotubular graphene network, which make the catalyst highly durable even under strong bubbling conditions.
Developing electrocatalysts with excellent activity and stability for water splitting in acidic media remains a formidable challenge due to the sluggish kinetics severe dissolution. As solution, multi-component doped RuO
In order to achieve aggressive scaling of the equivalent oxide thickness (EOT) and simultaneously reduce leakage currents in logic devices, silicon-based oxides (SiON / SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) have been replaced by physically thicker high-κ transition metal thin films many manufacturers starting from 45 nm technology node. CMOS process compatibility, integration reliability are key issues address while...
We report observations of unipolar recovery dielectric breakdown in fully silicided NiSi-gate HfSiON–SiOx bilayer based high-κ metal-insulator-semiconductor (MIS) gate stack, analogous to resistive switching metal-insulator-metal (MIM) nonvolatile memory devices. The dependence the voltage on hardness and filament location is analyzed physics behind MIS recovery, governed by joule heating induced oxygen vacancy trap passivation, explained using failure analysis statistical investigations....
Post breakdown (BD) reliability is an important area of study in ultra-thin gate dielectrics as it has significant implications on the performance degradation, lifetime, margin and power dissipation advanced sub-22 nm transistors circuits. A prolonged phase post-BD can ensure we live with circuit moderate error-free operation, even if soft (SBD) events occur early. While analysis simple straightforward for single layer SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
The study of scanning tunneling microscopy (STM) induced localized degradation and polarity dependent breakdown (BD) HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /SiO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> dielectric stacks is presented in this work, together with a correlated investigation the BD locations by transmission electron (TEM). events are also analysed using conductive-atomic force microscopy. analysis...
The resistive switching mechanism, which is crucial for the operations of random access memory (RRAM) devices, investigated using HfO2 based MOSFETs. After SET operation, MOSFETs exhibit a threshold voltage (VT) shift that found to be closely related formation conductive filaments in gate oxide. RESET operation performed through forming gas anneal treatment have same effect applying reverse polarity sweep, as usually done bipolar RRAM devices. RESET, current and VT measured back their...
Dielectric breakdown in advanced gate stacks state-of-the-art Si nanoelectronic devices has been one of the key front-end reliability concerns for further CMOS technology downscaling. In this paper, we present latest findings using physical analysis techniques such as transmission electron microscopy (TEM)/electron energy loss spectroscopy (EELS)/energy dispersive X-ray (EDS), scanning tunneling (STM) and ballistic-electron-emission (BEEM) to study morphology chemical nature nanosize...
In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based device. Using in-situ transmission electron microscopy, observe in real time that multiple conductive filaments (CFs) are formed across layer between top electrode bottom electrodes after forming. Various materials have been used, such as Cu, Ag, Ni. Contrary to common...
Switching behaviours have been observed after gate dielectric breakdown under certain favourable conditions. In our recent report in IEDM 2009, the conductive path can be "switched-off" if a reverse bias, as opposed to stressing voltage, is applied, condition required for observing SET and RESET conduction bipolar switching material systems. Similar phenomenon has also unipolar switching. This means that transistor "repaired" electrically by threshold voltage expand its lifetime. More...