Abstract A novel method is presented for the atomic layer deposition (ALD) of palladium on a tetrasulfide self‐assembled monolayer functionalized SiO 2 surface. Additionally, reducing agent (glyoxylic acid) was used to remove organic ligands from chemisorbed palladium( II ) hexafluoroacetylacetonate metallorganic. Glyoxylic acid an effective above 200 °C, which not optimal but it enough show proof‐of‐concept and deposit Pd “seed” layer. Palladium also deposited iridium at 80 °C 130 via...

The design and testing of a high ionization efficiency source for partially ionized beam deposition (PIBD) system are described. vaporized material from crucible is at the exit, where vapor has its highest density. can provide efficiencies up to 5% (ion/atom ratio) ion energies ranging 0.2 6 keV. Measurements current versus substrate bias potential along with rate reported using Al as material. A uniform intensity been obtained over 6-cm-diam distance 30 cm above source. If placed few...

<b>Objective:</b> To investigate the role of endothelial function, inflammatory markers, and N-terminal pro-brain natriuretic peptide (NT-proBNP) in patients with impaired chronotropic response during exercise test. <b>Methods:</b> 86 subjects were enrolled. Treadmill test was conducted according to modified Bruce protocols. Brachial ultrasound used measure endothelium dependent flow mediated vasodilatation (FMD). Chronotropic incompetence defined as either failure achieve 85% age predicted...

Diffusion of Ag from epitaxial layers into Si(111) is studied under an anneal 450–500 °C using the secondary ion mass spectrometry depth profiling tool. The measurements yielded values diffusion constant (0.80–1.6 × 10−15 cm2/s) which fall short literature extrapolated higher-temperature Arrhenius laws. SiO2 was also measured directly. observed diffusivity 1.0 cm2/s a factor ∼ 105 smaller than expected previous determinations Ag+ in obtained anneals forming gas. discrepancy may be due to...

Vapor-deposited films prepared under low adatom mobility conditions commonly exhibit columnar structures. We present the scanning electron microscopy study of Cu with a thickness around 3.7 μm deposited on rough Al2O3 ceramic substrates and smooth SiO2 substrates. The were using partially ionized beam deposition technique same conditions. have typical structure while those are noncolumnar. complete difference in physical structures is due to substrate surface roughness. results indicate that...

We have developed a new scheme to evaluate the atomic pair correlation function analytically and exactly for combined overlayer substrate system during first stages of epitaxy. This describes morphology growth on scale. The atoms can be random lattice gas or islands with an arbitrary distribution sizes. is particularly useful in calculating widths shapes intensity diffracted from epitaxially grown films using low energy high electron diffraction (LEED RHEED). carried out several realistic...

Al/Si(p) and Al/Si(n) Schottky diodes were implanted with hydrogen ions such that the peak of distribution was localized at metal-semiconductor interface. Current-voltage (I-V) measurements indicated more ohmic behavior in rectifying diodes. For both cases, annealing 200 °C for 30 min caused I-V curves to almost revert pre-implantation characteristics. A similar observed using capacitance-voltage (C-V) measurement technique. No significant change concentration or redistribution after heat...

We investigated the effects and underlying molecular mechanism of transient receptor potential vanilloid 1 (TRPV1), a calcium (Ca(2+) )-permeable non-selective cation channel, on phosphorylation endothelial nitric oxide synthase (eNOS) at threonine 497 (Thr497) in bovine aortic cells (BAECs) mice.Western blotting immunoprecipitation were used for evaluation protein phosphorylation; phosphatase 2B (PP2B) activity was assessed by convention kit; Griess assay NO production; tube formation...

Hydrogen content at the Al/Si interface of samples with Al films deposited by conventional means and a partially ionized beam (PIB) was measured using 1H(15N,αγ)12C nuclear resonance reaction. We observed that PIB-deposited film exhibited significantly lower hydrogen concentration in than sample means. The results demonstrated ability PIB technique to perform self-cleaning, least for contaminant.

α α′ α″ α‴ Poly-tetrafluoro-p-xylylene (PA-f ) has been evaluated as an interlayer dielectric for multichip modules and integrated circuits, its properties are reported. It a lower constant higher thermal stability than parylene-n (PA-n). The as-deposited films have very low crystallinity. crystallinity increases the film is annealed. Thermogravimetric analysis shown that these lose weight at temperatures 480 °C. A shrinkage in of ∼10% was observed when annealed vacuum temperature 425 2.38...

Ultrathin films of poly( p ‐xylylene) are selectively deposited on oxide surfaces but not air exposed copper . The polymers under conditions favorable for forming highly conformal ultrathin appropriate ‘pore sealing’ the surface ultra‐low κ dielectrics. Variable angle spectroscopic ellipsometry is used to measure polymer deposit SiO 2 , and shows lack deposition air‐exposed copper. X‐ray photoelectron analysis samples adventitious carbon metal surface, confirms that no occurs.

A unique method to deposit an atomic layer of phosphorus promote the chemisorption metallorganics on oxide layers is presented. The produced by deposition a thicker SiO2 plasma decomposition phosphine followed annealing at 255 °C sublime all but single bonded surface. This approach found be useful precursors such as palladium(II) hexafluoroacetylacetonate dielectric oxides and has implications for wetting adhesion between highly polarizable metals surfaces.

High quality Al/n-Si Schottky contacts have been fabricated using the partially ionized beam (PIB) deposition technique in a conventional vacuum condition without post heat treatment. The electrical characteristics of diodes were extremely uniform across 3 in. wafer and stable with respect to furnance annealing performed at 450 °C for 30 min. Scanning electron microscope examination revealed much shallower pit formation on Si surface, as compared that deposited by means, following A...

In this paper, we propose a Monte Carlo simulation model for the initial growth of polymer films by considering only monomer surface diffusion in vapor-deposition polymerization process. model, monomers are deposited randomly on two-dimensional square lattice with periodic boundary conditions and allowed to diffuse nearest neighbor hops. Whenever meet, they stop diffusing form stable dimer. When or encounters one ends (L>1), it stops moving attaches polymer. Attachment other polymers is at...

In this letter, we report high electro-optic methylene di(phenylene isocyanate) (MDI)/DR19 side-chain polymer film polymerization by vapor deposition polymerization. For samples deposited at substrate temperatures from 10 to 30 °C, the (EO) coefficient, r33, was measured be 5 pm/V after poling. A lifetime of about one week obtained. The highest EO effect observed were films −40 °C and polymerized coefficient these is 24 while only min. temperature, ratio monomers, poling temperature on...

Cu thin films have been deposited on Si(111) substrate using partially ionized deposition technique in which the self-ions, i.e., ions derived from depositing materials themselves, are being used to concurrently bombard surface during film growth. The ion percentage beam is range 0% 5% with energy varying between a few eV and several keV. substrates chemically cleaned by RCA cleaning process before loading into vacuum chamber of deposition. No situ performed prior A reduction impurities such...

A thermal preannealing technique for limiting diffusion of Cu into parylene-n (PA-n) in an interconnection application has been demonstrated. These pretreatments enhance fabrication latitude PA-n. The was deposited by partially ionized beam and the PA-n vapor deposited. Diffusion investigated using Rutherford backscattering (RBS) technique. found to diffuse as-deposited at temperatures about 623 K. It also that with certain pretreatment PA-n, this could be stopped as high Pretreatment 523 K...

Thin Ag films were deposited in a partially ionized beam vacuum system on undoped GaAs(100) substrates at room temperature. The x-ray pole-figure technique was used to characterize the crystal orientation. epitaxial relationship observed Ag(110)/GaAs(100) with Ag[100]//GaAs[1̄10]. epitaxy achieved 10−6 Torr range no situ cleaning. prepared only by HF dip immediately prior deposition.

The development of parallel and pipeline structures for real-time 2-D scalar block recursive filtering is discussed. A skew-pipeline algorithm developed processing. It can be implemented using a systolic array architecture. This structure also used other general applications where high-speed matrix-matrix multiplications should performed on arrays. For filters, interleaved architecture which more compatible to the nature image scanning introduced. Using this novel structure, sampling period...

It is shown that a peel strength of larger than 70 g/mm adhesion can be achieved between Cu and Parylene-N surfaces using the partially ionized beam (PIB) deposition technique while conventional techniques such as thermal evaporation, e-beam sputtering give no measurable adhesion. With PIB process, neither an enhancement layer nor substrate pretreatment required. In deposition, up to 5% self-ions 3 kV bias were used during deposition. Secondary-ion-mass spectroscopy revealed Cu–Parylene-N...

The purpose of this study was to investigate the association g.27667T>A genetic variant in osteoprotegerin (OPG) gene with bone mineral density (BMD) and osteoporosis. A total 393 primary osteoporosis subjects 402 healthy controls were recruited. BMD femoral neck hip, lumbar spine (L2-4), hip evaluated by Norland XR-46 dual-energy X-ray absorptiometry. genotyped using created restriction site-polymerase chain reaction. Our data indicated significant differences among different genotypes....

For microelectronics applications, it is important to have good interfacial properties between copper and parylene-N (Cu/ PA-N), silicon (PA-N/ Si). Two of the relevant studied in this article are diffusion individual layers into other layer at application temperatures adhesion these layers. The interface parylene-N, has been using secondary ion mass spectroscopy (SIMS). Scanning electron microscopy (SEM) also used study PA-N/Si interface. SEM revealed microstructure SIMS was tunnel through...

An iterative reconstruction technique that is guaranteed to converge the unique minimum-norm solution proposed. The algorithm allows of cross-sectional image by simple projecting images between display and detector arrays iteratively without employing computation intensive operations, such as Fourier transforms, convolutions or interpolations. A high speed optoelectronic implementation also presented. closed-loop structure reduces distortions introduced in common systems. structures can be...

Parallel and pipeline structures for real-time 2D recursive filtering are presented. For general scalar filters, a multiple-interleaved architecture is introduced that compatible with the nature of image-scanning scheme. Using this structure, sampling period can be fraction time needed one addition operation delay only few samples. In addition, structure does not require any I/O buffers implementation.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML"...