A5054038230- 2D Materials and Applications
- Topological Materials and Phenomena
- Graphene research and applications
- Quantum and electron transport phenomena
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Magnetic properties of thin films
- Heusler alloys: electronic and magnetic properties
- Multiferroics and related materials
- Advanced Memory and Neural Computing
- Advanced Condensed Matter Physics
- Chalcogenide Semiconductor Thin Films
- Physics of Superconductivity and Magnetism
- Magnetic and transport properties of perovskites and related materials
- Electronic and Structural Properties of Oxides
- Atomic and Subatomic Physics Research
- Advanced Photocatalysis Techniques
- TiO2 Photocatalysis and Solar Cells
- Iron-based superconductors research
- Quantum Dots Synthesis And Properties
- Vehicular Ad Hoc Networks (VANETs)
- Case Reports on Hematomas
- Pediatric Urology and Nephrology Studies
- Titanium Alloys Microstructure and Properties
- UAV Applications and Optimization
Huazhong University of Science and Technology
2021-2025
Materials Science & Engineering
2023-2025
Materials Processing (United States)
2025
The Affiliated Yongchuan Hospital of Chongqing Medical University
2023-2025
Chongqing Medical University
2023-2025
State Key Laboratory of Materials Processing and Die & Mould Technology
2025
Sias University
2023
Wuhan National Laboratory for Optoelectronics
2022-2023
University of Shanghai for Science and Technology
2020
Communication University of China
2020
The absence of two-dimensional (2D) van der Waals (vdW) ferromagnetic crystals with both above-room-temperature strong intrinsic ferromagnetism and large perpendicular magnetic anisotropy (PMA) severely hinders practical applications 2D vdW in next-generation low-power magnetoelectronic spintronic devices. Here, we report a crystal Fe3GaTe2 that exhibits record-high Curie temperature (Tc, ~350-380 K) for known ferromagnets, high saturation moment (40.11 emu/g), PMA energy density (~4.79 ×...
A magnetic tunnel junction (MTJ) is the core component in memory technologies, such as random-access memory, sensors and programmable logic devices. In particular, MTJs based on two-dimensional van der Waals (vdW) heterostructures offer unprecedented opportunities for low power consumption miniaturization of spintronic However, their operation at room temperature remains a challenge. Here, we report large magnetoresistance (TMR) up to 85% ( T = 300 K) vdW thin (< 10 nm) semiconductor...
Magnetic tunnel junctions (MTJs) based on van der Waals (vdW) heterostructures with sharp and clean interfaces the atomic scale are essential for application of next-generation spintronics. However, lack room-temperature intrinsic ferromagnetic crystals perpendicular magnetic anisotropy has greatly hindered development vertical MTJs. The discovery two-dimensional (2D) crystal Fe3GaTe2 solved problem facilitated realization practical spintronic devices. Here, we demonstrate a MTJ...
The spin-valve effect has been the focus of spintronics over last decades due to its potential for application in many spintronic devices. Two-dimensional (2D) van der Waals (vdW) materials are highly efficient build heterojunctions. However, Curie temperatures (TC) vdW ferromagnetic (FM) 2D crystals mostly below room temperature (∼30-220 K). It is very challenging develop room-temperature, FM crystal-based Here, we report 2D-crystal-based all-2D Fe3GaTe2/MoS2/Fe3GaTe2 magnetoresistance (MR)...
The emerging wide varieties of the van der Waals (vdW) magnets with atomically thin and smooth interfaces hold great promise for next-generation spintronic devices. However, due to lower Curie temperature vdW ferromagnets than room temperature, electrically manipulating its magnetization at has not been realized. In this work, it is demonstrated that perpendicular ferromagnet Fe3 GaTe2 can be effectively switched in /Pt bilayer by spin-orbit torques (SOTs) a relatively low current density...
A 2D room-temperature, ferromagnetic crystal based vdW Fe 3 GaTe 2 /MoSe /Fe ferromagnet/semiconductor van der Waals heterojunction is realized with a magnetoresistance of 3.7% at room temperature and 37.7% K under 10 nA working current.
The electrical control of coercivity and efficient magnetization switching in 2D ferromagnetic crystals at room temperature are crucial for next-generation spintronics. However, known systems exhibit limited adjustability temperature, electrically induced typically involves a high critical current density substantial power dissipation. Here, we report the highly tunable multistate using single van der Waals (vdW) ferromagnet Fe3GaTe2. can be adjusted to around 98.06% through application....
Abstract Magnetic tunnel junctions (MTJs) are widely applied in spintronic devices for efficient spin detection through the imbalance of polarization at Fermi level. The van der Waals (vdW) property 2D magnets with atomically flat surfaces and negligible surface roughness greatly facilitates development MTJs, primarily ferromagnets. Here, A‐type antiferromagnetism vdW single‐crystal (Fe 0.8 Co 0.2 ) 3 GaTe 2 is reported T N ≈ 203 K bulk 185 9‐nm nanosheets. metallic nature out‐of‐plane...
Graphene, the first isolated two-dimensional atomic crystal, is about to pass its 20th year. The last decade has been a critical period for graphene gradually move from laboratory practical applications, and research on spin-related physical properties various spintronic applications of still enduring. In this review, we systematically retrospect important state-of-art progresses graphene-based spintronics. First, spin–orbit coupling tuning means in have introduced, such as adatoms,...
The detection of broadband spectroscopy is a huge challenge for modern optoelectronics, especially extremely high- or low-energy photons. For metal halide perovskites significant progress has been made in high-energy photons such as X-rays, but there little exploration the high-performance photons, mid- far-infrared Most infrared photodetectors suffer large dark currents, and perovskite photodetectors' performances are significantly limited by ion migration. Here, facile solution evaporation...
Developing novel high-temperature van der Waals ferromagnetic semiconductor materials and investigating their interface coupling effects with 2D topological semimetals are pivotal for advancing next-generation spintronic quantum devices. However, most semiconductors exhibit ferromagnetism only at low temperatures, limiting the proximity research on interfaces semimetals. Here, an intrinsic, layered room-temperature crystal, FeCr
Abstract Atom‐thick 2D metal telluride atomic crystals (2D MTACs) display many fascinating physical properties for potential applications in multiple fields. In this review, recent advances the preparation, and of MTACs are presented. First, three kinds most available preparation methods single crystal have been summarized, including crystal‐based mechanical exfoliation, molecular beam epitaxy, chemical vapor deposition. Second, progress on abundant is briefly introduced, surface electronic...
Field-free room-temperature modulating magnetic domain structures and realizing stable nanoscale bubbles in 2D van der Waals (vdW) intrinsic ferromagnets are fundamentally important for spintronic devices. However, it is still very challenging the absence of a proper vdW ferromagnet with suitable perpendicular anisotropy. Here, by using ferromagnetic Fe3GaTe2 crystal Curie temperature over ∼340 K large anisotropy, we study field-free thickness-dependent structure evolution Au-capped...
The discovery and manipulation of topological Hall effect (THE), an abnormal magnetoelectric response mostly related to the Dzyaloshinskii-Moriya interaction (DMI), are promising for next-generation spintronic devices based on spin textures such as magnetic skyrmions. However, most skyrmions THE stabilized in a narrow temperature window either below or over room with high critical current manipulation. It is still elusive challenging achieve large both wide till low Here, by using...
The exchange-bias (EB) effect, usually arising in ferromagnetic (FM)-antiferromagnetic (AFM) interfaces with uniaxial magnetic anisotropy, holds high potentials spintronic applications. Here, we report both field-cooling and zero-field cooling EB effects a maximal field $|{H}_{EB}|$ reaches up to 3859 Oe above-room-temperature van der Waals (vdW) ferromagnet ${\mathrm{Fe}}_{3}\mathrm{Ga}{\mathrm{Te}}_{2}$ nanoflakes at low temperatures. observed intrinsic can be largely tuned via the...
The intrinsically nonmagnetic feature of van der Waals (vdW) layered transition-metal dichalcogenide (TMDC) semiconductors limits the spintronic applications these semiconductors. In this paper, we demonstrate a facile Te flux strategy to induce intrinsic ferromagnetism in vdW 2H-MoTe2 semiconductor by magnetic chromium (Cr) doping. Curie temperature (Tc) and saturation magnetization (Ms) can be well tuned adjusting Cr doping concentration. A notable Tc up 275 K achieved for Cr-doped bulk...
Fe 3 GaTe 2 , a recently discovered van der Waals ferromagnetic crystal with the highest Curie temperature and strong perpendicular magnetic anisotropy among two-dimensional (2D) materials, has attracted significant attention makes it promising candidate for next-generation spintronic applications. Compared GeTe which similar structure, mechanism of enhanced properties in is still unclear needs to be investigated. Here, by using x-ray circular dichroism measurements, we find that both Ga Te...
Abstract The manipulation of magnetization and spin polarization through electrical currents represents a fundamental breakthrough in spintronics, forming the foundation data storage, next-generation computing systems. Spin-transfer torque (STT) spinorbit (SOT) have emerged as leading technologies current-driven switching. However, these approaches typically require critical current densities range 10 6 to 9 A cm -2 , resulting significant heat generation during writing processes. Here, we...
Two-dimensional van der Waals (vdW) ferromagnetic/semiconductor heterojunctions represent an ideal platform for studying and exploiting tunneling magnetoresistance (TMR) effects due to the versatile band structure of semiconductors their high-quality interfaces. In all-vdW magnetic tunnel junction (MTJ) devices, both magnitude sign TMR can be tuned by applied voltage. Typically, as bias voltage increases, first amplitude decreases, then reverses and/or oscillates. Here, we report on...
Abstract Thermal stability is of great significance for the next‐generation two‐dimensional (2D) non‐volatile spintronic devices. Typically, as temperature increases, spin polarization materials decreases rapidly following Bloch 𝑇 3/2 law in low‐temperature regions, resulting a rapid decrease tunneling magnetoresistance (TMR) magnetic tunnel junction (MTJ). Owing to thermal effects induced by current during writing processes, even small fluctuations can result significant variations TMR...
Two-dimensional (2D) van der Waals (vdW) crystal Fe3GaTe2 with above-room-temperature intrinsic ferromagnetism has attracted widespread attention in spintronics. However, lattice vibrations and spin-phonon coupling are still unexplored, no room-temperature been identified 2D vdW magnets. Here, we report two Raman modes out-of-plane Fe3GaTe2: A1g1 A1g2, whose frequencies increase as the thickness decreases from bulk to 2D, due weakening of interlayer interactions spin exchange coupling. The...
Objective This study sought to clarify the relationship between triglyceride-glucose (TyG)–related obesity indices and all-cause cardiovascular mortality in patients with hyperuricemia (HUA).
Background The relationship between dietary oxidative balance score (DOBS) and diabetes-related renal events remains unclear. Methods In this study, the associations serum micronutrients diabetic nephropathy (DN) in participants matched by propensity (PSM) were retrospectively analyzed. And next, a cross-sectional analysis was performed with National Health Nutritional Examination Survey (NHANES) database. Weighted multivariate adjusted logistic regression models, dose–response curves,...