A5001703681- Conducting polymers and applications
- 2D Materials and Applications
- Organic Electronics and Photovoltaics
- Organic Light-Emitting Diodes Research
- Graphene research and applications
- Advanced Memory and Neural Computing
- Perovskite Materials and Applications
- Quantum and electron transport phenomena
- Magnetic properties of thin films
- DNA and Nucleic Acid Chemistry
- Synthesis and Properties of Aromatic Compounds
- Photochromic and Fluorescence Chemistry
- Covalent Organic Framework Applications
- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- Luminescence Properties of Advanced Materials
- Ferroelectric and Piezoelectric Materials
- Advanced battery technologies research
- Copper-based nanomaterials and applications
- Chemical Synthesis and Characterization
- Ferroelectric and Negative Capacitance Devices
- Molecular Junctions and Nanostructures
- Heusler alloys: electronic and magnetic properties
- Fullerene Chemistry and Applications
- Chalcogenide Semiconductor Thin Films
Chinese Academy of Sciences
2005-2022
Beijing National Laboratory for Molecular Sciences
2013-2022
Institute of Semiconductors
2021-2022
Beijing Academy of Quantum Information Sciences
2021-2022
University of Chinese Academy of Sciences
2013-2017
Institute of Chemistry
2013-2017
Fujian Institute of Research on the Structure of Matter
2005
A magnetic tunnel junction (MTJ) is the core component in memory technologies, such as random-access memory, sensors and programmable logic devices. In particular, MTJs based on two-dimensional van der Waals (vdW) heterostructures offer unprecedented opportunities for low power consumption miniaturization of spintronic However, their operation at room temperature remains a challenge. Here, we report large magnetoresistance (TMR) up to 85% ( T = 300 K) vdW thin (< 10 nm) semiconductor...
2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low-dimensional electronic, optoelectronic, and spintronic devices. Here, all-2D van der Waals vertical spin-valve devices, that combine the semiconductor InSe spacer with ferromagnetic metal Fe3 GeTe2 spin injection detection electrodes, are reported. Two distinct transport behaviors observed: tunneling metallic, which assigned to formation pinhole-free tunnel barrier at /InSe interface pinholes...
Abstract Exploiting the spin degree of freedom to store and manipulate information provides a paradigm for future microelectronics. The development van der Waals (vdW) heterostructures has created fascinating platform exploring spintronic properties in two-dimensional (2D) limit. Transition-metal dichalcogenides such as tungsten diselenide (WSe 2 ) have electronic band structures that are ideal hosting many exotic spin–orbit phenomena. Here, we report spin-filtering effect all-vdW with WSe...
Among the numerous two-dimensional van der Waals (vdW) magnetic materials, Fe3GeTe2 (FGT), due to its outstanding properties such as metallicity, high Curie temperature and strong perpendicular anisotropy, has quickly emerged a candidate with most potential for fabrication of all-vdW spintronic devices. Here, we fabricated simple vertical homojunction based on two few-layer exfoliated FGT flakes. Under certain range external fields, magnetization reversal can be achieved by applying negative...
Abstract A series of aza[4]helicenes have been conveniently synthesized in yields 71–92 % by a one‐pot procedure involving the Pictet–Spengler reaction. The structures were characterized 1 H and 13 C NMR spectroscopy, mass spectrometry, X‐ray crystallography. Moreover, it was found that self‐assemble into 2D layers or herringbone‐like solid state. In addition, optical properties investigated UV fluorescence spectroscopic methods.
Targeted design of organic semiconductors in spintronics is relatively limited. Therefore, four conjugated polymers with analogous structures based on isoindigo (IID) units were designed and synthesized to investigate the structure–property relationships spin charge carrier transport. Structural strategies include introduction pyridinic nitrogen atoms into IID change electronic alteration different branching points alkyl chains adjust aggregation structure. By fabricating polymer...
Abstract Control of spins by spin–orbit torque brings novel strategies to design spintronic devices with potentially high impact in data storage and logic‐in‐memory computing architectures. Although various attempts have been proposed avoid the participation magnetic field during magnetization switching for realizing multifunctional spin logic devices, simpler more feasible approaches are still strongly desired. Here, field‐free current‐induced is achieved through domain wall (DW) motion a...
A perylene diimide dimer based non-fullerene acceptor shows a promising efficiency of 5.24% and 6.36% with PBDTTT-C-T PBDT-TS1 as the donor, respectively.
Abstract Organic materials are proposed to be excellent spin transport layers due their weak hyperfine and spin–orbit coupling interaction. Donor−acceptor‐type polymers PTDCNTVT‐420 PTDCNTVT‐320 with diketopyrrolopyrrole (DPP) units employed as the spacers in organic valves, which have more advantages such solution processing, higher mobility, large area fabrication. The performance of valves based on DPP different alkyl side chain lengths studied. top ferromagnetic (FM) electrodes Co Ni 80...
Sensitivity of graphene Hall sensors was enhanced by modifying single-molecule magnets with excellent linearity, off voltage, repeatability and stability.
Abstract Organic spin valves (OSVs) have become an essential building block of next‐generation memory devices which focus on degree transporting carriers. Meanwhile, negative magnetoresistance (MR) effect in the OSV is increasingly observed deserves further exploration for rich physics behind. In this work, MR response ferromagnetic (FM) metal‐based OSVs using donor−acceptor (D−A) conjugated polymer based naphthalenediimide units as a spacer material observed. The does not result from...
The organic interlayer is a crucial part in spin valves (OSVs), and its molecular structure has an important effect on the device performance. In this work, we utilized conjugated polymers based isoindigo derivatives (PIID-TVTCN, PAIID-TVTCN, PFIID-TVTCN) to fabricate OSVs studied dependence of performance polymer structure. Positive magnetoresistance (MR) was obtained with 40 nm polymeric thin films. Under same conditions, introduction pyridine nitrogen into skeleton (PAIID-TVTCN) induced...
Abstract The performance of planar perovskite solar cells (PSCs) is quite dependent on the interfacial conditions and then band engineering very important not only for effective improvement power conversion efficiency (PCE) but also better understanding charge transfer in cells. In this report, ZnO based electron transport layer (ETL) PSCs was studied by modulating Sn‐doping level (0 ≤ x 0.2). A V ‐like variation work function ( W f ) as Zn 1‐ Sn O 1+ films realized from 4.23 to 4.39 eV. As...
The substituent effects in methyl- and methoxy-substituted thienothiophene–bis(oxoindolinylidene)benzodifurandione copolymers on field-effect performances were studied.
The unipolar n‐type polymeric semiconductors are crucial for the development of complementary inverters and logic circuits. To achieve this target, polymer skeleton should be electron‐deficient, which guarantees energy‐level alignment between lowest unoccupied molecular orbital energy level materials work function electrode, further permitting effective electron injection. Different from introduction sp 2 ‐hybridized nitrogen atoms fluorine atoms, cyano‐substituted aromatic blocks...
Abstract 2D conjugated polymers (2D CPs) with high crystallinity and proper bandgaps have attracted much attention. However, the development of magnetic CPs still remains a challenge. It is urgently needed to develop graphene‐like tunable structural properties under relatively mild reaction conditions. Herein, two (TAPA‐HKH HAB‐HKH) fused rings bridged by pyrazine are synthesized reacting 2,3,7,8‐tetraaminephenazine (TAPA) 1,2,3,4,5,6‐hexaaminebenzene (HAB) hexaketocyclohexane octahydrate...
In article number 1900318, Kuijuan Jin, Gui Yu, and co-workers report the fabrication study of diketopyrrolopyrrole-based polymer organic spin-valves. The spinterface this with Co Ni80Fe20 electrodes shows distinct magnetoresistance (MR) values. effect alkyl side chain lengths in backbones on behavior spin valves is also investigated. addition, MR ratios 30% can be reached. These results indicate that series polymers has potential for use future spintronics.
Spintronics research has been of emerging interest in the inorganic and organic electronics field, magnetic materials play an important role spintronics. Here, spin valve (SV) devices are reported based on few‐layered van der Waals semiconducting WSe 2 or InSe sandwiched between room‐temperature ferromagnet Pt/Co/Ru exfoliated layered ferromagnetic metal Fe 3 GeTe (FGT). The metallic interface rather than Schottky barrier is formed despite nature InSe, which may be originated from...