A5023537721- Nanowire Synthesis and Applications
- Photonic and Optical Devices
- Semiconductor materials and interfaces
- Surface Roughness and Optical Measurements
- Acoustic Wave Resonator Technologies
- Mechanical and Optical Resonators
- Photonic Crystals and Applications
- Semiconductor Lasers and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Optical Coatings and Gratings
- Chalcogenide Semiconductor Thin Films
- solar cell performance optimization
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Quantum Information and Cryptography
Johannes Kepler University of Linz
2024
Semnan University
2017
McMaster University
2011-2013
Abstract magnified image This article reviews recent developments in nanowire‐based photovoltaics (PV) with an emphasis on III–V semiconductors including growth mechanisms, device fabrication and performance results. We first review the available nanowire methods followed by control of direction crystal structure. Important issues are reviewed, optical absorption, carrier collection, strain accommodation, design for high efficiency, tunnel junctions, Ohmic contact formation, passivation...
The effect of sulfur passivation on core-shell p-n junction GaAs nanowire (NW) solar cells has been investigated. Devices two types were investigated, consisting indium tin oxide contact dots or opaque Au finger electrodes. Lateral carrier transport from the NWs to fingers was achieved via a p-doped surface conduction layer. between had sidewall surfaces exposed for by sulfur. relative cell efficiency increased 19% upon passivation. contribution thin film grown total estimated removing using...
The effect of ammonium polysulfide solution, (NH4)2Sx, on the surface passivation p-doped InP nanowires (NWs) was investigated by micro-photoluminescence. An improvement in photoluminescence (PL) intensity from individual NWs upon used to optimize procedure using different solvents, sulfur concentrations and durations passivation. optimized gave an average 24 times peak PL intensity. A numerical model is presented explain terms a reduction trap density two orders magnitude 1012 1010 cm−2,...
Solid-state quantum emitters embedded in circular Bragg resonators are attractive due to their ability emit light with high brightness and low multiphoton probability. As for any emitter-microcavity system, fabrication imperfections limit the spatial spectral overlap of emitter cavity mode, thus limiting coupling strength. Here, we show that an initial mismatch can be corrected after device by repeated wet chemical etching steps. We demonstrate ∼16 nm wavelength tuning optical modes AlGaAs...
The surface passivation of n-type GaAs nanowires (NWs) by ammonium polysulfide solution, (NH4)2Sx, is described. resulted in a two order magnitude increase current density an ensemble NW device. A depletion and recombination model used to explain the results terms reduction trap upon passivation. are comparable previous method using AlInP shells. S was found be unstable according degradation conductivity after 7 months exposure air.
Solid-state quantum emitters embedded in circular Bragg resonators are attractive due to their ability emit states of light with high brightness and low multi-photon probability. As for any emitter-microcavity system, fabrication imperfections limit the spatial spectral overlap emitter cavity mode, thus limiting coupling strength. Here, we show that an initial mismatch can be corrected after device by repeated wet chemical etching steps. We demonstrate ~16 nm wavelength tuning optical modes...