A5059091015- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Ga2O3 and related materials
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- ZnO doping and properties
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Photocathodes and Microchannel Plates
- Catalytic Processes in Materials Science
- Advanced Fiber Laser Technologies
- Advancements in Solid Oxide Fuel Cells
- Geological formations and processes
- Geological and Geophysical Studies
- Advanced Battery Technologies Research
- TiO2 Photocatalysis and Solar Cells
- Soil Geostatistics and Mapping
- Metal-Organic Frameworks: Synthesis and Applications
- Vibration and Dynamic Analysis
- Cruise Tourism Development and Management
- Advanced battery technologies research
- Maritime Navigation and Safety
- Fire effects on ecosystems
- Geoscience and Mining Technology
- Plasma Diagnostics and Applications
China University of Geosciences (Beijing)
2022-2024
Hunan University
2021
Chinese Academy of Sciences
2010-2018
Suzhou Institute of Nano-tech and Nano-bionics
2007-2018
State Key Laboratory on Integrated Optoelectronics
2013
Institute of Semiconductors
2013
Beijing University of Technology
2005-2007
Beijing Institute of Optoelectronic Technology
2007
Kyoei University
2007
University of Science and Technology of China
2001-2002
A preliminary on-chip integration of GaN-based laser, modulator, and photodetector grown on Si is reported. The modulator integrated into the laser shares same InGaN quantum well active region with photodetector. By varying applied voltage to absorption can be adjusted due changed band bending region, hence threshold current light output power tuned. effectively detect tuned by which opens up a new way for photonic Si.
Local InGaN quantum well (QW) decomposition and resultant inhomogeneous luminescence in green laser diode (LD) epitaxial structures are investigated using micro-photoluminescence, Z-contrast scanning transmission electron microscopy, high-resolution microscopy. The local QW is found to happen during p-type layer growth due too high thermal budget may initiate at the InGaN/GaN upper interface probably formation of In-rich clusters there. Reducing optimizing suppress decomposition, LD with...
Direct bandgap III-V semiconductor lasers grown on silicon (Si) are highly desired for monolithic integration with Si photonics. Fabrication of a Fabry-Pérot cavity usually includes facet cleavage, however, that is not compatible on-chip photonic integration. Etching as an alternative approach holds great advantage in preparing mirrors no need breaking wafer into bars. However, gallium nitride (GaN) sidewalls prepared by dry etching often have large roughness and damages, which would cause...
A part of the pre-processed Beta Ka-band Radar Interferometer (KaRIn) data (September 7 – November 21, 2023) for Surface Water and Ocean Topography (SWOT) mission has been released. To validate performance SWOT L2 KaRIn Pre-Validated (Beta data), this study conducted various experiments, including inverting ocean gravity field seafloor topography from these data. Validating accuracy deflections vertical (DOV) by DOV products Scripps Institution Oceanography (SIO). The RMS differences...
This letter reports a successful fabrication of room-temperature electrically injected AlGaN-based near-ultraviolet laser diode grown on Si. An Al-composition step down-graded AlN/AlGaN multilayer buffer was carefully engineered to not only tackle the huge difference in coefficient thermal expansion between AlGaN template and Si substrate, but also reduce threading dislocation density caused by large lattice mismatch. On top crack-free n-AlGaN template, high quality InGaN/AlGaN quantum wells...
GaN films grown on PSS are investigated by XRD, CL, SEM and TEM. There low threading dislocations (TDs) with larger fill factor, which results in better electrostatic discharge (ESD) yield of LEDs. The effect growth rate is It found that density decreases as the rates decrease. And performance InGaN-based LEDs different analyzed. determined slanted angle factor simultaneously.
Silicon photonics has been longing for an efficient on-chip light source that is electrically driven at room temperature. Microdisk laser featured with low-loss whispering gallery modes can emit directional lasing beam through a closely coupled waveguide efficiently, and hence particularly suitable integration. The realization of pumped III-nitride microdisk grown on Si impeded by the conventional undercut structure, poor material quality, limited quality GaN formed dry etching. Here we...
An optical simulation including reflection and refraction is used to simulate the light illumination intensity of gallium nitride (GaN)-based light-emitting diodes (LEDs) on varied patterned sapphire substrates (PSS) with different slanted angles fill factors ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> ). It found that a micro pyramid array angle from 25° 60° able effectively improve which reaches summit as around 33°. And enhances...
The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates (PSSes) with different values fill factor (f) slanted angle (θ) are investigated in detail. threading dislocation (TD) density is lower the film grown PSS a smaller factor, resulting higher internal quantum efficiency (IQE). Also ability LED to withstand electrostatic discharge (ESD) increases as decreases. illumination output power affected by both θ f. It found that production tan f than
Abstract BACKGROUND: Ultraviolet light emitting diodes (UV LEDs) were used as a source in TiO 2 photocatalysis because of their many advantages, such as, long life, safety, low pollution, etc. In this experiment, panel was successfully fabricated with UV LEDs, the intensities which relatively uniform. RESULTS: The sterilization process comprised two steps. First, an aerosol blocked by high efficient particulate air (HEPA) filter paper coated photocatalyst. Second, Staphylococcus aureus...
This work reports the fabrication of via-thin-film light-emitting diode (via-TF-LED) to improve light output power (LOP) blue/white GaN-based LEDs grown on Si (111) substrates. The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and p-GaN bonded wafer carrier silver-based reflective electrode, together an array embedded n-type via pillar metal contact from etched through multiple-quantum-wells (MQWs) into layer. When operated at 350 mA, via-TF-LED gave enhanced blue...
Using the finite-element method, thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down are calculated. The effects various parameters on characteristics analysed, thicknesses AlN submount optimized. obtained result provides reference parameter selection materials.
High-quality gallium nitride (GaN) film was grown on nano-patterned sapphire substrates (NPSS) and investigated using XRD SEM. It found that the optimum thickness of GaN buffer layer NPSS is 15 nm, which thinner than micro-patterned (MPSS). An interesting phenomenon observed for NPSS:GaN mainly grows trench regions little sidewalls patterns at initial growth stage, dramatically different from MPSS. In addition, electrical optical properties LEDs were characterized.
Haiyang-2A (HY-2A), China’s first altimetry satellite mission, was launched more than ten years ago, and its follow-up satellites, HY-2B, HY-2C, HY-2D, have also been launched. More attention has paid to the evaluation of these observations in marine gravity field inversion. However, this is not case for bathymetry This study aimed at evaluating performance HY-2 products recovery. Not only anomaly, but deflection vertical from series’ used. The results show that derived HY-2A a precision...
The p-type GaN(p-GaN) samples grown at low temperature 870—980℃ on sapphire su bstrate were prepared by the metal organic chemical vapor deposition technique(M OCVD), and their electrical properties investigated. p-GaN grow n below 900℃ show high-resistivity, above have good conductivity. In addition, are also related with d oping level growth condition of p-GaN. N-Ga mole ratio leads to poor conductivity, high rough morphology. At last, we use optimized fabricate green-light emitting...
We report on the formation of Ohmic contacts with low resistance and high thermal stability to N-face n-GaN for vertical structure light emitters using a Ti(50nm)/Pt(50nm)/Au(50nm) metal scheme, where Pt layer is introduced as blocking suppress diffusion Au onto surface. It shown that unlike conventional Ti/Al/Ti/Au contacts, Ti/Pt/Au exhibit an behavior relatively specific contact resistivity 1.1×10−4 Ω·cm2 even after annealing at 350°C. X-ray diffraction (XRD) measurements by synchrotron...
AlGaN-based near-ultraviolet light-emitting diodes (NUV-LEDs) emitting at 370 nm were grown on Si(111) substrates by metal-organic chemical vapor deposition. The effect of growth parameters Si-doped n-type AlGaN thick layer the material quality and optical performance was studied. Photoluminescence measurements showed that near-band-edge emission n-AlGaN greatly increased yellow luminescence (YL) substantially reduced, when a high temperature, chamber pressure, low rate. It found reduced...
We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The room-temperature (RT) cw operation lifetime LDs has extended to longer than 15.6 h. LD structure was grown a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). typical threshold current and voltage under RT are 78 mA 6.8 V, respectively. experimental analysis degradation performances suggests that after aging treatment, the increase series resistance...