A5062826837- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Photonic and Optical Devices
- Nanoparticles: synthesis and applications
- Heavy metals in environment
- Semiconductor materials and devices
- Microplastics and Plastic Pollution
- Photocathodes and Microchannel Plates
- ZnO doping and properties
- Semiconductor Lasers and Optical Devices
- Semiconductor Quantum Structures and Devices
- Metal and Thin Film Mechanics
- Recycling and Waste Management Techniques
- Nanowire Synthesis and Applications
- Atmospheric chemistry and aerosols
- Atmospheric Ozone and Climate
- Atmospheric aerosols and clouds
- Geochemistry and Elemental Analysis
- Heavy Metal Exposure and Toxicity
- Advanced Semiconductor Detectors and Materials
- Mercury impact and mitigation studies
- Acoustic Wave Resonator Technologies
- Advanced Nanomaterials in Catalysis
- Radioactivity and Radon Measurements
- Electrochemical Analysis and Applications
Chinese Academy of Sciences
2014-2025
Institute of Soil Science
2018-2025
University of Chinese Academy of Sciences
2018-2025
Suzhou Institute of Nano-tech and Nano-bionics
2018-2024
University of Science and Technology of China
2019-2024
Guangzhou Institute of Geochemistry
2023
Guangdong Institute of Intelligent Manufacturing
2022
Anhui University of Science and Technology
2021
Anhui Science and Technology University
2021
Hefei University
2019
A preliminary on-chip integration of GaN-based laser, modulator, and photodetector grown on Si is reported. The modulator integrated into the laser shares same InGaN quantum well active region with photodetector. By varying applied voltage to absorption can be adjusted due changed band bending region, hence threshold current light output power tuned. effectively detect tuned by which opens up a new way for photonic Si.
This article reviews the plant uptake of silver nanoparticles (AgNPs) that occurred in soil systems and planta fate Ag.
Abstract Particulate organic matter (POM) is distributed worldwide in high abundance. Although insoluble, it could serve as a redox mediator for microbial reductive dehalogenation and mineral transformation. Quantitative information on the role of POM natural occurrence silver nanoparticles (AgNPs) lacking, but needed to re-evaluate sources AgNPs soils, which are commonly considered derive from anthropogenic inputs. Here we demonstrate that reduces ions under solar irradiation, by producing...
Direct bandgap III-V semiconductor lasers grown on silicon (Si) are highly desired for monolithic integration with Si photonics. Fabrication of a Fabry-Pérot cavity usually includes facet cleavage, however, that is not compatible on-chip photonic integration. Etching as an alternative approach holds great advantage in preparing mirrors no need breaking wafer into bars. However, gallium nitride (GaN) sidewalls prepared by dry etching often have large roughness and damages, which would cause...
Biodynamic,<italic>in vivo</italic>, and omics-based approaches will capture the complex ecological interactions of AgNPs with non-target organisms.
Abstract. We report on the development of a cavity-enhanced aerosol single-scattering albedometer based incoherent broadband absorption spectroscopy (IBBCEAS) combined with an integrating sphere (IS) for simultaneous in situ measurements scattering and extinction coefficients exact same sample volume. The employed blue light-emitting-diode (LED)-based IBBCEAS approach measurement wavelength-resolved optical over spectral range 445–480 nm nephelometer coupled to setup scattering. signal was...
The increasing use of silver-containing nanoparticles (NPs) in commercial products has led to NP accumulation the environment and potentially food webs. Identifying uptake pathways different chemical species NPs, such as Ag2S-NP metallic AgNPs, into plants is important understanding their entry chains. In this study, soybean Glycine max L. was hydroponically exposed Ag2S-NPs via roots (10-50 mg L-1) stable-isotope-enriched 109AgNPs leaves [7.9 μg (g fresh weight)-1]. Less than 29% Ag treated...
Understanding how ecosystems respond to ubiquitous microplastic (MP) pollution is crucial for ensuring global food security. Here, we conduct a multiecosystem meta-analysis of 3,286 data points and reveal that MP exposure leads reduction in photosynthesis 7.05 12.12% terrestrial plants, marine algae, freshwater algae. These reductions align with those estimated by constructed machine learning model using current levels, showing reduces the chlorophyll content photoautotrophs 10.96 12.84%....
We report on the epitaxial lateral overgrowth (ELO) of high-quality AlN stripe-patterned Si(111) substrates with various trench widths. By narrowing down and ridge widths patterned Si substrates, crack-free, 6-micrometer-thick, films were produced. The full-width-at-half-maximum values X-ray-diffraction rocking curves for (0002) (101¯2) planes as low 260 374 arcsec, respectively, corresponding to a record dislocation density 1.3 × 109 cm−2. Through combination micro-Raman study X-ray...
Cation composition sensitive visible quantum cutting behavior has been observed and the reasons are systematically investigated in detail for whitlockite type Ca<sub>3</sub>(PO<sub>4</sub>)<sub>2</sub>.
This letter reports the influence of material quality and device processing on performance AlGaN-based Schottky barrier deep ultraviolet photodetectors grown Si substrates. The thermal annealing can significantly improve height wet chemical etching effectively remove damage. Meanwhile, decrease threading dislocation density pit size, especially later, substantially suppress reverse leakage. As a result, leakage current as-fabricated UV photodetector was reduced down to 3×10 −8 A/cm 2 ....
Heteroepitaxial growth of high Al-content AlGaN often results in a density threading dislocations and surface hexagonal hillocks, which degrade the performance reliability AlGaN-based UVC light emitting diodes (LEDs). In this study, degradation mechanism impurity/defect behavior LEDs relation to hillocks have been studied detail. It was found that early is primarily caused by electron leakage. The prominent contribution hillock edges leakage unambiguously evidenced transmission microscopy...
This work reports a demonstration of electrically injected GaN-based near-ultraviolet microdisk laser diodes with lasing wavelength 386.3 nm at room temperature. The crack-free structure was epitaxially grown on Si substrates using an Al-composed down-graded AlN/AlGaN multilayer buffer to mitigate the mismatches in lattice constant and coefficient thermal expansion, processed into “sandwich-like” structures radius 12 μm. Air-bridge electrodes were successfully fabricated enable device...
Microplastics (MPs) are ubiquitous in marine, freshwater, and terrestrial systems. Despite MPs acting as vectors of contaminants the environment, it remains unknown whether alter chemical speciation coexisting contaminants. Here, we show photoreduction dissolved silver (Ag(I)) to metallic nanoparticles (Ag(0)-NPs) surface freshwater a sand matrix by polystyrene (PS) upon solar irradiation for 3 7 days, respectively. The reduction rate constants range from 2.3 6.1 × 10–3 h–1 borate buffer...
P-type Ohmic contact on the dry-etched p-GaN surface is highly desired for various device applications with buried underneath by an epitaxial layer or a dielectric layer. However, GaN dry etching process usually induces damage and inevitably degrades p-type performance. In this work, low specific resistivity has been successfully realized using wet chemical combined thermal treatment in NH3/N2 ambient. Furthermore, recovery mechanism of was studied through in-depth characterization atomic...
High-power AlGaN-based 385 nm near-ultraviolet light-emitting diodes (UVA-LEDs) grown on Si(111) substrates are reported. The threading dislocation (TD) density of AlGaN was reduced by employing an Al-composition step-graded AlN/AlGaN multilayer buffer. V-shaped pits were intentionally incorporated into the active region to screen carriers from nonradiative recombination centers (NRCs) around TDs and facilitate hole injection. light extraction efficiency enhanced surface roughening a...
The increasing demand for complementary metal-oxide-semiconductor integrated GaN-based optoelectronics and power electronics calls wafer-scale crack-free high quality GaN thick film grown on Si. However, the huge mismatch in both lattice constant coefficient of thermal expansion between Si often causes a density threading dislocations (TDD, typically 109–1010 cm−2) formation micro-crack networks, producing poor-quality with limited thickness (<6 µm). By virtue well-designed Al-composition...
The quality factors of modes in square resonators are calculated based on the far-field emission analytical field distribution. obtained reasonable agreement with those by finite-difference time-domain (FDTD) technique and Pade approximation method. power diagonal directions for whispering-gallery-like is zero due to interference cancellation caused odd distributions relative mirror planes, so they have larger than even
We reported the successful growth of a crack-free high-quality 2 μm-thick Al<sub>0.5</sub>Ga<sub>0.5</sub>N film with smooth surface grown on planar Si by metal–organic chemical vapor deposition.