Stefan Altmeyer

ORCID: 0009-0007-6127-8988
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About
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Research Areas
  • Religion, Theology, and Education
  • Religious Education and Schools
  • German legal, social, and political studies
  • Quantum and electron transport phenomena
  • Surface and Thin Film Phenomena
  • Psychoanalysis and Social Critique
  • Religion, Theology, History, Judaism, Christianity
  • Literature and Cultural Memory
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Linguistic research and analysis
  • Linguistic Education and Pedagogy
  • Digital Holography and Microscopy
  • Advanced X-ray Imaging Techniques
  • Philosophical and Historical Studies
  • Optical measurement and interference techniques
  • Memory, History, Trauma, Identity
  • Sociology and Education Studies
  • Physics of Superconductivity and Magnetism
  • Photonic and Optical Devices
  • Photorefractive and Nonlinear Optics
  • Liquid Crystal Research Advancements
  • Advanced Optical Imaging Technologies
  • Nanofabrication and Lithography Techniques
  • Ophthalmology and Visual Impairment Studies

TH Köln - University of Applied Sciences
2007-2024

Praxis
2023

Deutsche Nationalbibliothek
2022

University of Bonn
2011

Association of German Engineers
2000

Westfälische Hochschule
1999

RWTH Aachen University
1997-1998

A novel bilayer resist system consisting of a 3 nm thick titanium (Ti) layer on top 65 poly(methylmethacrylate) (PMMA) was developed for mechanical nanolithography with the atomic force microscope. The ultrathin Ti allowed 20 resolution patterning conventional silicon cantilevers, provided proper force-depth calibration performed before lithography. Techniques pattern transfer were applied to fabricate chromium nanostructures and nanowires from patterned Ti/PMMA resist.

10.1116/1.590277 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 1998-09-01

In this paper a non-interferometric, non-iterative method for phase retrieval by Green's functions is presented. The theory based on the parabolic wave equation that describes propagation of light in Fresnel approximation homogeneous media. first identity will be used to derive an algorithm considering different boundary conditions. Finally it shown commonly solution transport-of-intensity can obtained as special case more general function formulation derived here.

10.1364/josaa.27.002244 article EN Journal of the Optical Society of America A 2010-09-20

We present a simple method to determine the refractive indices of transparent specimens. The index an object under investigation is received by evaluating optical path difference introduced object, while taking into account geometric parameters. that corresponds phase distribution obtained noninterferometric, noniterative retrieval based on Green's functions. It will be shown this technique highly accurate and quantitative for determination.

10.1364/ao.50.000427 article EN Applied Optics 2011-01-21

Multifocal intraocular lenses incorporate a variety of design considerations, including dimensioning the base monofocal shape and diffraction grating. While studying three different lens models, we present practical approach for mathematical modelling evaluation these geometries. Contrary to typical measurement methods, non-contact measurements were performed on Alcon SN6AD1, HumanOptics MS 612 DAY AMO ZMA00 using confocal microscope. Subsequent data processing includes centering, tilting...

10.1038/s41598-023-27521-7 article EN cc-by Scientific Reports 2023-01-17

To increase the operating temperature of a single electron circuit, it is necessary to reduce capacitance tunnel junction. Usually this done by reducing linewidth capacitor forming metal stripes, which are sandwiched with an intermediate insulator. The use alternative materials, however, allows reduction means thicker isolation layers or geometry different from sandwich. new SECO (step edge cut off) method, for fabrication devices will be presented.

10.1063/1.115172 article EN Applied Physics Letters 1995-07-24

A two-layer resist system consisting of 3 nm titanium and 65 polymethylmethacrylate (PMMA) has been developed to expand the potential mechanical atomic force microscope nanolithography. Approximately 20 wide structures have grooved in an ultrathin Ti film. The realized patterns were transferred into PMMA bottom layer by reactive ion etching (RIE) process oxygen. Finally, 30 45 deep grooves, arrays holes with a period 55 nm, which are 20–30 diameter depth, fabricated silicon second RIE step...

10.1116/1.590117 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 1998-07-01

Metal based single electron transistors are fabricated by the step edge cut off process. Titanium metal lines with a width of 0.1 μm deposited on prepatterned silicon substrates, that serve as dielectric barriers for tunnel junctions. In structures multiple junctions, clear Coulomb blockade and oscillation features can be observed at temperatures up to 77 K.

10.1063/1.365374 article EN Journal of Applied Physics 1997-06-15

Coulomb blockade effects are studied in highly doped molecular-beam-epitaxy grown silicon quantum wires. The nanometer structure of the single electron tunneling transistor (SETT) is fabricated by beam lithography (EBL), anisotropic reactive ion etching (RIE) and low temperature oxide deposition. An extended observed even at T =130 K I - V characteristics, while outside region a clear staircase visible. zero-conductivity range significantly affected applied gate voltage. In addition,...

10.1143/jjap.38.465 article EN Japanese Journal of Applied Physics 1999-01-01

We present a fabrication method for single electron tunneling transistor (SETT) in silicon. The process is based on bonded and etched back silicon insulator material with 40 nm thick highly n-doped Si layer grown by molecular beam epitaxy. nanometer structure of the SETT defined lithography combination two-layer resist system. pattern transferred anisotropic reactive ion etching. devices are passivated low temperature remote plasma enhanced chemical vapor deposition high quality...

10.1116/1.590412 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 1998-11-01

Purpose: To evaluate the differences between two extended depth-of-focus intraocular lenses, Alcon IQ Vivity and Bausch & Lomb LuxSmart to compare them with a simple monofocal lens, IQ, using simulation-based approach. Methods: A mathematical lens model was created for each type based on measured surface geometry. The then used in raytracer calculate refractive power map of ray propagation image focal zone. Results: simulations confirm enhanced depth focus these lenses. There are apparent...

10.1167/tvst.13.8.33 article EN cc-by-nc-nd Translational Vision Science & Technology 2024-08-21

The application of single-electron devices is restricted to temperatures at which Coulomb blockade occurs. most critical parameter the tunnelling capacitance. Operation liquid helium temperature, for example, requires capacitances order 20 aF. To realize such low capacitances, advanced electron-beam lithography below nm mandatory in fabrication schemes proposed up now. Here we will present a new process that capable as small 1.5 aF with relaxed technological requirements same time. detailed...

10.1088/0268-1242/11/11s/008 article EN Semiconductor Science and Technology 1996-11-01

We present a fabrication method for single electron transistor in silicon. The process is based on bonded and etched back silicon insulator material with very thin top layer. Tunnel junctions are realized by beam lithography combination two layer resistsystem. pattern transferred anisotropic reactive ion etching the lateral dimensions reduced further thermal oxidation. technology is, apart from e-beam lithography, fully metal–oxide–semiconductor compatible. electrically characterized samples...

10.1116/1.589739 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 1997-11-01

In this investigation, a 1.5 W Nd:YAG laser with good beam quality is utilized to characterize the output numerical aperture (NA) of multimode combiners reference input NA. The transmission combiners, being one factors define brightness, also measured when light coupled in 0.15 Hence, commercially available couplers are characterized for first time according brightness conservation and tested up power level more than 580 power.

10.1109/cleoe-iqec.2007.4386476 article EN 2007-06-01

The transport-of-intensity equation (TIE) describes a deterministic relation between the intensity distribution in different focal planes and corresponding phase distribution. A Green's function solution of TIE is used to retrieve an object considering specific boundary conditions. This leads accurate reconstruction properties objects, e.g. refractive indices thus numerical aperture (NA) optical fibers. required distributions are captured simultaneously by use multi-camera microscope. solved...

10.1117/12.889340 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 2011-05-23

Medien und Subjektwerdung hängen heute aufs Engste zusammen. In der soziologischen Analyse von Ronald Hitzler gleicht das Leben in gegenwärtigen visuell geprägten Medienkultur einem ‚elektronischen Panoptikum‘: Viele neuen Kommunikationsformen setzen auf die Bereitschaft freiwilliger öffentlicher Selbstthematisierung spielen zugleich mit dem Wunsch nach Beobachtung des Intimen. Entsprechende prägen verändern heutige Lebensformen nachhaltig. Der Beitrag fragt den Konsequenzen dieser...

10.1515/ijpt.2011.018 article DE International Journal of Practical Theology 2011-01-01
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