A5030515866- Advanced Thermoelectric Materials and Devices
- Thermal properties of materials
- Ferroelectric and Piezoelectric Materials
- Thermal Radiation and Cooling Technologies
- Microwave Dielectric Ceramics Synthesis
- Electronic and Structural Properties of Oxides
- Semiconductor Quantum Structures and Devices
- Advanced Surface Polishing Techniques
- Magnetic and transport properties of perovskites and related materials
- ZnO doping and properties
- Perovskite Materials and Applications
- Ga2O3 and related materials
- Catalysis and Oxidation Reactions
- Advanced ceramic materials synthesis
- Multiferroics and related materials
- Photonic and Optical Devices
- Dielectric materials and actuators
- Advanced materials and composites
- Advanced Semiconductor Detectors and Materials
- Advanced Photocatalysis Techniques
- Advanced Fiber Optic Sensors
- Mechanical and Optical Resonators
- Metal and Thin Film Mechanics
- Chalcogenide Semiconductor Thin Films
- Advanced machining processes and optimization
Collaborative Innovation Center of Advanced Microstructures
2021-2025
Nanjing University
2021-2025
Chengdu Tool Research Institute (China)
2019
Hong Kong Polytechnic University
2019
Changzhou University
2015-2016
Abstract The InAs/AlAs superlattice structures hold significant potential for application in low-noise avalanche photodetectors. With their performance practical applications linked to fundamental physical property of carrier relaxation time, this paper investigates the times superlattices across various mono-layers, temperatures, and concentrations. Our investigation indicates that span several tens picoseconds, confirming high-quality interfaces do not significantly reduce manner defect...
Transition metal oxides are promising candidates in the field of thermoelectricity, which can convert heat and electricity into each other realize efficient utilization waste energy. For figure merit ZT = S2σT/(κe + κl), a lower thermal conductivity is desired for an enhanced ZT, cation doping appropriate way to regulate transport properties. However, because S, σ, κe strongly coupled with other, one parameter modification generate compensation others, making regulation more difficult. In...
Interfacial thermal transport plays a prominent role in the management of nanoscale objects and is fundamental importance for basic research nanodevices. At metal/insulator interfaces, configuration commonly found electronic devices, heat strongly depends upon effective energy transfer from thermalized electrons metal to phonons insulator. However, mechanism interfacial electron-phonon coupling at interfaces not well understood. Here, observation substantial enhancement resistance important...
As the featured material of superionic thermoelectric (TE) family, copper-chalcogenide Cu2-xSe is attracting growing research interest for its excellent TE performance derived from satisfactory power factor and ultra-low thermal conductivity induced by effect. Various efforts have been made proved to be effective further enhance Cu2-xSe. However, this still far application stage, which mainly due concerns regarding control properties costly complex fabrication technology. Here we report a...
Lead-free thermoelectric material, copper chalcogenides, have been attracting much interest from many research and industrial applications owing to their high capability of harvesting energy heat. The state-of-the-art chalcogenides are commonly fabricated by the spark plasma sintering (SPS) hot pressing (HP) techniques. Those methods still costly complicated particularly when compared conventional solid-state method. Here, we report an easy-to-fabricate lead-free copper(I)-selenium (Cu2Se)...
The mapping of long-wavelength phonons is important to understand and manipulate the thermal transport in multilayered structures, but it remains a long-standing challenge due collective behaviors phonons. In this study, an experimental demonstration alloyed Al0.1Ga0.9As/Al0.9Ga0.1As superlattice system reported. Multiple strategies filter out short- mid-wavelength are used. phonon mean-free-path-dependent properties directly demonstrate both suppression effect ErAs nanoislands contribution...
In conventional knowledge, ferroelectric solid solutions were formed between members belonging to the same crystal structure family. Since both tungsten bronze and perovskite structures are constructed by connecting corner-sharing oxygen octahedra, it offers a possibility for formatting an unusual solution these two families. Herein, (1 -
Two-dimensional (2D) perovskites exhibit enhanced thermal stability compared to three-dimensional perovskites, especially the emerging 2D Dion–Jacobson (DJ) phase perovskite. However, heat transfer mechanisms in DJ are rarely reported. Herein, we determine conductivities of (PDA)(FA) n − 1 Pb I 3 + films with = 1−6 by time-domain thermoreflectance. The measured results indicate that these extremely low, showing a trend from decline rise increasing values, and reaching lowest when 2. We...
Phonons, the quanta of lattice vibrations, are primary heat carriers for semiconductors and dielectrics. The demand effective phonon manipulation urgently emerges, because thermal management is crucial ongoing development micro/nano semiconductor devices towards higher integration power densities1, 2. Phonons also show wave-particle duality, while they commonly treated as particle flows in current structures3, 4. However, it sees constraints when structure size reduces to nano atomic scales,...
This paper investigates the impact of a sample structure on amplitude time-domain Brillouin scattering (TDBS) oscillations using silicon wafers with different oxide layer thicknesses as an example. According to calculation results based transfer matrix theory and Green’s function, along experimental results, we discovered that TDBS exhibits dual peaks corresponding thickness dioxide layer, highlighting TDBS’s acute sensitivity internal structure. Furthermore, our computational indicate both...
Diamond offers great potential for use as a thermal spreader in various applications, including power electronics and radio-frequency (RF) applications. However, to be used an efficient spreader, the atomically smooth surface of diamond is critical bonded with chips. Herein, polishing technique 2-inch diameter wafer-scale bulk polycrystalline substrate proposed. In this work, 350 μm thick grown by microwave plasma-assisted chemical vapor deposition (MPACVD) on Si at growth rate 8 µm/h....