A5110588215- Advanced Thermoelectric Materials and Devices
- Thermal Radiation and Cooling Technologies
- Thermal properties of materials
- Chalcogenide Semiconductor Thin Films
- Electromagnetic Effects on Materials
- Microstructure and mechanical properties
- Advanced Thermodynamics and Statistical Mechanics
- Metal Forming Simulation Techniques
- Innovative Energy Harvesting Technologies
- Phase-change materials and chalcogenides
- Metallurgy and Material Forming
- Electrochemical sensors and biosensors
- Advanced Welding Techniques Analysis
- Magnetic Properties and Applications
- Perfectionism, Procrastination, Anxiety Studies
- Quantum Dots Synthesis And Properties
- Surface Treatment and Residual Stress
- Advanced biosensing and bioanalysis techniques
- Advancements in Battery Materials
- Advanced Surface Polishing Techniques
- Metal and Thin Film Mechanics
- Heusler alloys: electronic and magnetic properties
- 2D Materials and Applications
- Perovskite Materials and Applications
- Extraction and Separation Processes
Weifang University
2022-2025
Tianjin University
2023-2025
Shandong University
2017-2022
Shenzhen University
2020-2022
Anshan Normal University
2021
Hanshan Normal University
2021
Institut des Sciences Chimiques de Rennes
2020
Université de Rennes
2020
Centre National de la Recherche Scientifique
2020
Flexible Bi2 Te3 -based thermoelectric devices can function as power generators for powering wearable electronics or chip-sensors internet-of-things. However, the unsatisfied performance of n-type flexible thin films significantly limits their wide application. In this study, a novel thermal diffusion method is employed to fabricate Te-embedded on polyimide substrates, where Te embeddings be achieved by tuning temperature and correspondingly result in an energy filtering effect at /Te...
Abstract High relative contact electrical resistance and poor flexibility in inorganic thin‐film thermoelectric devices significantly limit their practical applications. To overcome this challenge, a one‐step thermal diffusion method to fabricate assembly‐free is developed, where the situ grown electrode delivers an excellent leg‐electrode contact, leading high output power prepared p‐type Sb 2 Te 3 /n‐type Bi device, which composed of 8 pairs p‐n junctions. Such device shows very low 7.5%...
Abstract Nanocomposite engineering decouples the transport of phonons and electrons. This usually involves in-situ formation or ex-situ addition nanoparticles to a material matrix with hetero-composition hetero-structure ( he C- S) interfaces homo-structure ho interfaces. Herein, quasi homo-composition nanocomposite consisting Pnma Bi 2 SeS - Pnnm is obtained through Br dopant-induced phase transition, providing coherent interface between second due slight structural difference two phases. S...
Inorganic p-type Sb2Te3 flexible thin films (f-TFs) with eco-friendly and high thermoelectric performance have attracted wide research interest potential for commercial applications. This study employs a facile in-situ reaction method to prepare by rationally adjusting the synthesized temperature. The prepared show good crystallinity, which enhances electrical conductivity of ~1,440 S·cm-1 due weakened carrier scattering. Simultaneously, optimized concentration, through synthesis...
Ag2Se thin film devices have attracted significant interest in energy harvesting technologies for powering microscale systems. In this work, an situ selenide diffusion strategy is employed to prepare films, optimizing the carrier transport by tuning synthesis temperature. The optimized mobility of ∼871.43 cm–2 V–1 s–1 achieved, leading a high room-temperature electric conductivity ∼1235 S cm–1. Correspondingly, decent Seebeck coefficient (|S| > 120 μV K–1) obtained due optimal concentration...
Significant strides have been made in enhancing the thermoelectric properties of p-type PbTe alloys, whereas performance n-type alloys lags behind that primarily owing to difficulty improving their Seebeck coefficient via band convergence. In this work, Mn was introduced into Pb0.985Sb0.015Te alloy, and doping increases absolute value significantly by increasing effective mass reducing carrier concentration, resulting a higher power factor 20.8 μW/K2cm being achieved for 0.5% Mn-doped sample...
Te-based materials exhibit outstanding thermoelectric performance at room temperature, promising candidates for the fabrication of wearable electronic devices and chip-sensor internet-of-things. In this work, a combination magnetron co-sputtering post-tellurization methods was used to prepare doped Sb2Te3 thin films. A high carrier concentration is ascribed increase in density states after doping proved by first-principles calculations experiments, which leads an electrical conductivity...
Te-free n-type Bi2O2Se is one of the promising thermoelectric materials due to its high chemical stability and eco-friendliness. However, conversion efficiency reported so far still low. Hence, it crucial elevate performance realize eco-friendly widespread applications in heat recovery. In present work, we introduce a facile method for exquisite grain boundary engineering with considerable tunability. Herein, Bi introduced via two-step heating route construct thermally induced atomically...
Inorganic n-type Bi2Te3 flexible thin film, as a promising near-room temperature thermoelectric material, has attracted extensive research interest and application potentials. In this work, to further improve the performance of films, post-electric current treatment is employed. It found that increasing electric leads increased carrier concentration conductivity from 1874 S cm−1 2240 cm−1. Consequently, high power factor ~10.70 μW K−2 at room can be achieved in films treated by 0.5 A, which...