A5065407337- Optical Network Technologies
- Advanced Optical Network Technologies
- Advanced Photonic Communication Systems
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Cloud Computing and Resource Management
- Software-Defined Networks and 5G
- Semiconductor Quantum Structures and Devices
- Interconnection Networks and Systems
- Radio Frequency Integrated Circuit Design
- Semiconductor materials and devices
- Analog and Mixed-Signal Circuit Design
- IoT and Edge/Fog Computing
- Thin-Film Transistor Technologies
- Advanced Data Storage Technologies
- CCD and CMOS Imaging Sensors
- Software System Performance and Reliability
- Terahertz technology and applications
- Integrated Circuits and Semiconductor Failure Analysis
- Infrared Target Detection Methodologies
- Radiation Effects in Electronics
- Advancements in Semiconductor Devices and Circuit Design
- Analytical Chemistry and Sensors
- Magneto-Optical Properties and Applications
- Scientific Computing and Data Management
Google (United States)
2012-2024
NTT (Japan)
2005-2010
Photonics (United States)
2007
NTT Basic Research Laboratories
2007
Stanford University
2000-2005
We discuss technology options and challenges for scaling intra-datacenter interconnects beyond 1 Tb/s bandwidths, with focus on two possible approaches: pulse amplitude modulation (PAM)-based intensity modulation-direct detection (IM-DD) baud-rate sampled coherent technology. In our studies, we compare the performance of various orders PAM (PAM4 to 8). addition these fixed signaling options, a flexible (FlexPAM) technique leveraging granularity in spectral efficiency (SE) is proposed...
We present a decade of evolution and production experience with Jupiter datacenter network fabrics. In this period has delivered 5x higher speed capacity, 30% reduction in capex, 41% power, incremental deployment technology refresh all while serving live traffic. A key enabler for these improvements is evolving from Clos to direct-connect topology among the machine aggregation blocks. Critical architectural changes include: interconnection layer employing Micro-Electro-Mechanical Systems...
We describe our experience developing what we believe to be the world's first large-scale production deployments of lightwave fabrics used for both datacenter networking and machine-learning (ML) applications. Using optical circuit switches (OCSes) transceivers developed in-house, employ hardware software codesign integrate into network computing infrastructure. Key design is a high degree multiplexing enabled by new kinds wavelength-division-multiplexing (WDM) circulators that support...
In this presentation, we will review the evolution of Google's intra-datacenter interconnects and networking over past decade, then outline future technology directions which, along with a more holistic design approach, be needed to keep pace requirements growth datacenter.
We discuss challenges and solutions for beyond 1Tb/s intra-datacenter bandwidth scaling, with a focus on the FlexPAM-based direct detection baud-rate DSP enabled coherent detection.
GaAs photoconductive switches have been integrated with two parallel 4-bit CMOS analog-to-digital (A/D) converter channels to demonstrate the time-interleaved sampling of wideband signals. The picosecond aperture provided by low-temperature-grown-GaAs metal-semiconductor-metal switches, in combination low-jitter short-pulse lasers, enables optically-triggered electrical signals tens gigahertz bandwidth at low medium resolution. A pair paths, one for and second feedthrough cancellation,...
In this paper, we describe Apollo, to the best of our knowledge, world's first large-scale production deployment optical circuit switches (OCSes) for datacenter networking. We will infrastructure challenges and use cases that motivated switching inside datacenters. then delve into requirements OCSes applications: balancing cost, port count, time, performance, which drive design choices implementation details internally developed 3D MEMS-based OCS. To enable Apollo layer, employ circulators...
We review state-of-the-art datacenter technologies for 800G, 1.6T and beyond interconnect speeds, focusing on 200G per-lane IM-DD (intensity modulated-direct detect) 800G-LR1 coherent-lite transmissions.
We demonstrate the interconnection of two optical packet switching systems: a hybrid optoelectronic router and rings. Error-free inter-ring intra-ring transmission unicast multicast transport encapsulated 10 GbE are achieved.
GaAs was grown directly on silicon by molecular beam epitaxy (MBE) at low substrate temperature (/spl sim/250/spl deg/C). Both the wafer cleaning and film growth processes were done temperatures lower than Si-Al eutectic to enable monolithic integration of low-temperature-GaAs photoconductive switches with finished Si-CMOS circuits. The surfaces show less 1 nm rms roughness anti-phase domain density is below detection limit X-ray diffraction. Metal-semiconductor-metal made using this...
Get PDF Email Share with Facebook Tweet This Post on reddit LinkedIn Add to CiteULike Mendeley BibSonomy Citation Copy Text C. F. Lam, H. Liu, and R. Urata, "What Devices do Data Centers Need?," in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper M2K.5. Export BibTex Endnote (RIS) HTML Plain Video alert Save article
We give an overview of key technologies for realizing WDM-PON. In particular, we highlight promising developments and directions in widely tunable laser achieving a high performance, colorless ONU at the cost points required access networks.
We describe the development of an optically clocked transistor array (OCTA) interface device for label swapping high-speed asynchronous burst optical packets. The OCTA integrates three critical functions serial-to-parallel (SP) conversion, parallel-to-serial (PS) and clock-pulse generation into a simple optoelectronic integrated circuit (OEIC) to create single-chip between input/output baseband labels CMOS processor. result is high-performance solution which compact low power. In this paper,...
We report a prototype, 4x4 (4 input/4 output) label processing and switching sub-system for 10-Gb/s asynchronous burst variable-length optical packets. With the we perform packet demonstration, achieving error-free (BER<10(-12)) operation all possible input/output combinations (16 paths) simultaneously. Power consumption latency of entire, self-contained is 83 W (includes fan power) 300 ns, respectively.
This letter demonstrates an ultrafast sample and hold circuit using optically triggered metal-semiconductor-metal switches made of low-temperature-grown GaAs for use in a photonic analog-to-digital conversion system. A differential configuration is incorporated to reduce feedthrough noise.
By linking the unique capabilities of photonic devices with signal processing power electronics, photonically sampled analog-to-digital (A/D) conversion systems have demonstrated potential for superior performance over all-electrical A/D systems. We adopt a scheme using low-temperature (LT)-grown GaAs metal-semiconductor-metal (MSM) photoconductive switches integrated Si-CMOS converters. The large bandwidth LT and low timing jitter short width mode-locked laser pulses are combined to...
In this paper, we describe Apollo, to the best of our knowledge, world's first large-scale production deployment optical circuit switches (OCSes) for datacenter networking. We review underlying hardware technologies including design internally developed OCS and WDM transceivers.
A hybrid optoelectronic router which optimally utilizes both optical and electrical technologies is promising for reducing power, size, latency, with the ability to process arbitrary-length ultrafast asynchronous packets support flexible, IP-related services (QoS, TTL, multicast routing, etc.).
We review state-of-the-art datacenter technologies for 800G, 1.6T and beyond interconnect speeds, focusing on 200G per-lane IM-DD (intensity modulated-direct detect) 800G-LR1 coherent-lite transmissions.
We highlight promising developments and directions in silicon photonics for realizing cost effective WDM-PON: photonic integration integrated WDM transceivers at the OLT widely tunable laser technologies achieving a high performance, colorless ONU.
GaAs photoconductive switches are integrated with two parallel 4 b CMOS ADC channels for time-interleaved sampling of wideband signals. Peak SNDR exceeding 23 dB has been measured inputs up to 20 GHz. Each channel dissipates 70 mW and occupies an area 150 /spl mu/m-450 mu/m in a 0.25 technology.