A5101667794- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Electron and X-Ray Spectroscopy Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- CCD and CMOS Imaging Sensors
- Social Media and Politics
- Carbon Nanotubes in Composites
- Plasma Diagnostics and Applications
- Lanthanide and Transition Metal Complexes
- Luminescence and Fluorescent Materials
- Smart Materials for Construction
- Photocathodes and Microchannel Plates
- Organic Light-Emitting Diodes Research
- Photonic Crystals and Applications
- Coal Combustion and Slurry Processing
- Electrical and Bioimpedance Tomography
- Molecular Junctions and Nanostructures
- Thermography and Photoacoustic Techniques
- Drilling and Well Engineering
- Photonic and Optical Devices
- Near-Field Optical Microscopy
- Enhanced Oil Recovery Techniques
- Quantum Dots Synthesis And Properties
- Digital Innovation in Industries
Regensburg University of Applied Sciences
2024-2025
California NanoSystems Institute
2005
University of Missouri–St. Louis
2005
University of California, Santa Barbara
2002
We investigate the influence of geometry and doping level on performance n-type silicon nanowire field emitters pillar structures. Therefore, multiple cathodes with 50 by arrays (diameter: 5 μm, height: 30 spacing: μm) were fabricated measured in diode configuration. In first experiment, we compared two types using same material. Geometry 1 is black silicon, which a highly dense surface covering forest tightly spaced needles resulting from self-masking during plasma etching process single...
We use optical CMOS image sensors for spatially and time-resolved measurement of the emission currents field cathodes. The measured signal depends, on one hand, current that flows from cathode surface through vacuum to sensor surface. On other it is influenced by variables, such as extraction voltage, which accelerates electrons towards surface, exposure time set sensor. In this article, these influencing factors pixel signals a are examined in detail. first step, an equation formulated...
In this work, high-current field emission electron source chips were fabricated using laser-micromachining and MEMS technology. The resulting combined with commercially available printed circuit boards (PCBs) to obtain a multichip source. By controlling the separate sources an external current control circuit, we able divide desired total evenly across individual deployed in PCB-carrier. consequence, show decreased degradation due reduced load per chip. First, single chip was measured...
Polarization effects in photoluminescence spectra of Eu3+ ions tris(dinaphthoylmethane) (monophenanthroline)europium(III) complex [abbreviated hereafter as Eu(dnm)3phen] dispersed stretched polyethylene (PE) reveal quasi-uniaxial alignment the molecular complex, not present unstretched PE. The ligand field structure D50−F72 transition Eu(dnm)3phen single crystal differs from that a molecule PE, indicating rearrangement organic ligands upon stretching.
A CMOS image sensor is utilized to determine the time- and spatially resolved distribution of total electron emission current a silicon field array. The measures without need for phosphorus screens or scintillators as converters. However, in initial experiments, rather low currents several hundreds nanoamperes per emitter already damaged surface, which altered systems’ signal response over measurement time. In consequence, we coated surface with Cu layer protection. contrast original...
A method is described for the determination of water crystallisation in various types gypsum presence clay minerals with aid infrared spectroscopy. The determined by use 1685 cm–1 absorption band an accuracy 0·50 per cent. m/m.
We demonstrate the coupling of external emission from dye molecules to cavity modes provided by a microdisk resonator utilizing fast and simple fabrication method that combines semiconductor microprocessing with sol-gel supramolecular self-assembly chemistry.