An identified neuron of the leech, a Retzius cell, has been attached to open gate p -channel field-effect transistor. Action potentials, spontaneous or stimulated, modulate directly source-drain current in silicon. The electronic signals match shape action potential. average voltage on was up 25 percent intracellular change. Occasionally weak that resemble first derivative potential were observed. junctions can be described by model includes capacitive coupling plasma membrane and oxide...

Coulomb blockade effects are investigated in lateral transport through a quantum dot defined two-dimensional electron gas. Tunneling excited states of the is observed for various tunneling barriers. It shown that occurring via transitions between ground with different numbers electrons can be suppressed by occupation states. Measurements magnetic field parallel to current give evidence processes involving spin.

Abstract In organic thin‐film transistors (TFTs) fabricated in the inverted (bottom‐gate) device structure, surface roughness of gate dielectric onto which organic‐semiconductor layer is deposited expected to have a significant effect on TFT characteristics. To quantitatively evaluate this effect, method tune consisting thin aluminum oxide and an alkylphosphonic acid self‐assembled monolayer over wide range by controlling single process parameter, namely substrate temperature during...

Direct-write electron-beam lithography has been used to fabricate low-voltage p-channel and n-channel organic thin-film transistors with channel lengths as small 200 nm gate-to-contact overlaps 100 on glass flexible transparent polymeric substrates. The have on/off current ratios large 4 × 10 9 subthreshold swings 70 mV/decade, the up 8 low 80 mV/decade. These are largest reported date for nanoscale transistors. Inverters based two a length of display characteristic switching-delay time...

One of the circuit topologies for implementation unipolar integrated circuits (circuits that use either p-channel or n-channel transistors, but not both) is zero-VGS architecture. Zero-VGS often provide excellent static performance (large small-signal gain and large noise margins), they suffer from signal delay imposed by load transistor. To address this limitation, we have used electron-beam lithography to fabricate based on organic transistors with channel lengths as small 120 nm flexible...

Single-electron tunneling through two coupled quantum dots is strongly influenced by the electrostatic interaction between dots. At low temperatures, we observe formation of a molecularlike state in double-dot system. The are defined split gates an ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As-GaAs heterostructure. They different size and series, leading to charging energies. In linear transport regime find diagram for double dot. This exhibits operation...

Zero-bias anomalies in the conductance through quantum dots have recently been identified as Kondo resonances and explained terms of Anderson impurity model. The effect requires a degeneracy it has proposed that this should occur for odd electron numbers on dot. In paper we present data, obtained split-gate dot with small number electrons, which are disagreement expectation. mapping model is discussed an interacting N system demonstrating why expectation can fail.

Since 1990, the integer quantum Hall effect has provided electrical resistance standard, and there been a firm belief that measured resistances are described only by fundamental physical constants--the elementary charge e Planck constant h. The metrological application seems not to rely on detailed knowledge of microscopic picture effect; however, technical guidelines recommended confirm quality sample exactness value. In this paper, we give our present understanding picture, derived from...

Abstract Despite the large body of research conducted on organic transistors, transit frequency field‐effect transistors has seen virtually no improvement for a decade and remains far below 1 GHz. One reason is that most still focused improving charge‐carrier mobility, parameter little influence short‐channel transistors. By examining fundamental equations by extrapolating recent progress relevant device parameters, roadmap to gigahertz derived.

The magnetoresistance of a narrow single quantum well is spectacularly different from the usual behavior. At filling factors $\frac{2}{3}$ and $\frac{3}{5}$ we observe large sharp maxima in longitudinal resistance instead expected minima. peak value exceeds those surrounding magnetic field regions by factor up to 3. formation takes place on very time scales which suggests close relation with nuclear spins. We discuss properties observed due domains electronic states.

The rich array of conventional and exotic electronic properties that can be generated by oxide heterostructures is great potential value for device applications. However, only single transistors bare any circuit functionality have been realized from complex oxides. Here, monolithically‐integrated n‐type metal‐oxide‐semiconductor logic circuits are reported utilize the two‐dimensional electron liquid at LaAlO 3 /SrTiO interface. Providing capability to process signals functional devices such...

Conductance resonances measured for split-gate structures around threshold are interpreted in terms of single-electron tunneling through a quantum dot beneath the tip gate finger. Measurements at different values source-drain voltage allow spectroscopy excited states fixed number electrons dot. The magnetic-field dependence conductance is consistent with minimal seven

A system consisting of two independently contacted quantum dots with a strong electrostatic interaction shows an interdot Coulomb blockade when the are weakly tunnel coupled to their leads. How can be overcome by correlated tunneling coupling leads increases is studied experimentally. The experimental results compared numerical renormalization group calculations using predefined (measured) parameters. Combining our and theoretical we identify transport through Kondo correlations due between dots.

Abstract A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option a hybrid dielectric composed thin film aluminum oxide and molecular self-assembled monolayer formed exposure surface electrode to radio-frequency-generated oxygen plasma. This work investigates how properties such dielectrics are affected plasma power...

We map out compressible and incompressible strips in the depletion region of a two-dimensional electron system (2DES) quantum Hall regime by using metal single-electron transistor (SET) fabricated on top GaAs/AlGaAs heterostructure containing 2DES. Applying voltage to gate electrode at $0.9\ensuremath{\mu}\mathrm{m}$ from SET island shifts edge 2DES closer island. Different are clearly resolved monitoring fluctuations current through SET. The number these is consistent with value bulk...

A method has been developed to form two quantum dot systems in lateral arrangement a two-dimensional electron system of GaAs–AlGaAs heterostructure with strong capacitive interdot coupling. In the authors’ design, capacitance can reach more than one-third single-dot while tunneling between dots is excluded. This achieved by floating metallic electrode covering both dots, already used split-gate designs before. Here, however, they have reduced coupling this gate other electrodes surroundings...

We present line- and area-scans of the Hall potential landscape a two-dimensional electron system (2DES) in narrow (AlGa)As-based bars under quantum (QH) conditions, obtained by low-temperature scanning force microscopy. For several magnetic field values B regime QH plateau with Landau level filling factor , we measured evolution profiles longitudinal voltage drop along bar as function increasing voltage/current bias, leading finally to electrically induced breakdown effect (QHE). Basically...

Organic thin-film transistors are especially apt for mobile and wearable electronics, in which low-voltage operation is a critical prerequisite. The charge transport organic semiconductors significantly governed by the density energetic distribution of trap states. authors extend an established method determining states to with low operating voltage, thus thin layers gate dielectric. This approach helps study fundamental physics semiconductors, improve performance devices based on them.