- Advanced Memory and Neural Computing
- Perovskite Materials and Applications
- Transition Metal Oxide Nanomaterials
- Conducting polymers and applications
- Thyroid Disorders and Treatments
- Microtubule and mitosis dynamics
- DNA and Nucleic Acid Chemistry
- 2D Materials and Applications
- Mitochondrial Function and Pathology
- Molecular spectroscopy and chirality
- Semiconductor materials and devices
- Receptor Mechanisms and Signaling
- RNA and protein synthesis mechanisms
- Neuroscience and Neuropharmacology Research
- Ferroelectric and Negative Capacitance Devices
- Retinoids in leukemia and cellular processes
- Photosynthetic Processes and Mechanisms
- ZnO doping and properties
- Hormonal Regulation and Hypertension
- Amino Acid Enzymes and Metabolism
- RNA Research and Splicing
- Photoreceptor and optogenetics research
- Liquid Crystal Research Advancements
- Surfactants and Colloidal Systems
- Neuroscience and Neural Engineering
Assam University
2018-2025
Silchar Medical College and Hospital
2015-2021
Jadavpur University
2018
National Institute Of Technology Silchar
2015-2018
Indian Institute of Chemical Biology
1992-2009
Burnley General Teaching Hospital
2005
North Bengal University
1995-2001
Royal Blackburn Teaching Hospital
2000
Western Isles Hospital
1996-2000
University of Liverpool
1988-1996
The global agri-food system is simultaneously a major contributor to, and severely affected by, climate change. Agroecological farming systems can contribute to creating resilient systems. Based on multiyear qualitative case study, ...Supporting transitions sustainable, important ensure stable food supply in the face of growing extremes. Agroecology, or diversified based ecological principles, such ...
Recently, several types of lead halide perovskites have been actively researched for resistive switching memory or artificial synapse due to their current–voltage hysteresis along with the feasibility fabrication and superior charge mobility.
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTOptical Activity and the Conformation of Polyinosinic Acid Several Other Polynucleotide Complexes*P. K. Sarkar Jen Tsi YangCite this: Biochemistry 1965, 4, 7, 1238–1244Publication Date (Print):July 1, 1965Publication History Published online1 May 2002Published inissue 1 July 1965https://pubs.acs.org/doi/10.1021/bi00883a004https://doi.org/10.1021/bi00883a004research-articleACS PublicationsRequest reuse permissionsArticle...
Various sizes of SnO<sub>2</sub> NPs have been successfully synthesized and embedded into the insulating PMMA layer sandwiched between ITO Al electrodes.
Halide perovskite (HP) materials are actively researched for resistive switching (RS) memory devices due to their current-voltage hysteresis along with low-temperature processability, superior charge mobility, and simple fabrication. In this study, all-inorganic RbPbI3 has been doped Cl in the halide site incorporated as a media Ag/RbPbI3-xClx/ITO structure, since pure is nonswitchable. Five compositions of RbPbI3-xClx (x = 0, 0.3, 0.6, 0.9, 1.2) films fabricated, conductivity was found be...
All-inorganic halide perovskites are considered as favorable materials for various electronic applications because of their superior functionality and stability. In this study, the inorganic rubidium lead-bromide (RbPbBr3) perovskite has been integrated a resistive switching (RS) layer in Al/RbPbBr3/indium tin oxide/polyethylene terephthalate flexible structure exhibits both bipolar (memory) threshold functions. The appears low compliance current (CC), whereas memory is initiated by setting...
Emulation of biological signal processing, learning and memory functions is essential for the development artificial circuitry. Two terminal synapses are supposed to be more feasible with system in terms energy efficiency processing. Here, we report on fabrication organic–inorganic hybrid perovskite based two-terminal synapse which synaptic plasticity modified by both voltage pulses light illumination. The device emulates important characteristics, including analog switching, short-term...
The application of a NiOy/NiOx bilayer in resistive switching (RS) devices with x > y was studied for its ability to achieve reliable multilevel cell (MLC) characteristics. A sharp change resistance brought about by sweeping the voltage, along an improved on/off ratio (>103) and endurance (104) were achieved structure as compared single NiOx layer devices. Moreover, it found that nonvolatile stable levels, especially multiple low-resistance states Cu/NiOy/NiOx/Pt memory devices, could be...
All-inorganic halide perovskites CsPbX3 (X = Cl, Br or I) have transpired to be utilized in several optoelectronic devices owing their multifaceted optical and electrical features superior thermal stability as compared other organic–inorganic hybrid perovskites. Herein, a bipolar resistive switching (RS) characteristic of the cube Al/CsPbClxBr3–x (x 3, 1.5, 0)/ITO/PET configuration is reported with low operating voltage. Among all fabricated memory devices, CsPbBr3-based system presents most...
Abstract Memristors are one of the fastest developing electronic devices in field data storage and brain inspired neural computing. As a two terminal device, memristors numerously utilized as resistive random access memories (RRAM) energy efficient artificial synapses. Herein, fabrication perovskite‐type rubidium lead chloride quantum dots (RPCQDs) is reported functional layer memristive system. The Al/RPCQDs/indium doped tin oxide (ITO), exhibits cycling‐induced decrease SET voltage, where...
Abstract Investigations have been made on the optical rotatory dispersion properties of E. coli ribosomes and their constituent RNA proteins. The results indicate that ( 1 ) no conformational changes are involved in formation a 70S particle from 50S 308 subunits, 2 ribosomal proteins similar to most globular with little α‐helix content, 3 conformation inside ribosome is very free state.
Molybdenum disulfide (MoS2) is of great interest for its applicability in various optoelectronic devices. Here we report the resistive switching properties polymethylmethacrylate embedding MoS2 nano-crystals. The devices are developed on an ITO-coated PET substrate with copper as top electrode. Systematic evaluation parameters, basis content, suggests non-volatile memory characteristics. A decent ON/OFF ratio, high retention time and long endurance 3 × 103, 105 s cycles respectively recorded...
The magnificent properties of all-inorganic halide perovskites prompt them to be explored in electronic applications. In this report, we synthesized RbPbI3 perovskite nanorods (PNRs), with and without mixing. Synthesized were embedded poly(methyl methacrylate) (PMMA) for resistive switching (RS) application. devices pure PNRs@PMMA did not show significant characteristics. However, the chloride (Cl)-doped PMMA exhibited prominent RS behavior, which is attributed induction defect/trap states...
Despite the recent advancements in memory devices, quest for building materials with low power consumption is still on, ultimate focus on durability of system and reliability reproducibility its performance. Halide perovskites (HPs), which have several intriguing photoelectrical traits, recently been utilized applications; one highlights these ionic-motion-based fast switching their crystal structure. In this work, a CsPb2Br5 film applied as layer to implement devices flexible...
The introduction of iodobismuth ternary perovskites has solved the stability and toxicity issues raised by lead trihalide perovskites. However, their wide band gaps low structural dimensionalities have limited power conversion efficiency in solar cell applications. In this work, we partially incorporated Rb+ into Cs3Bi2I9 perovskite tuned its gap for better optoelectronic results. optical characterizations reveal that monovalent alkali cation replaces larger Cs+ structure lowers from 2.01 to...
Transition Metal Dichalcogenides (TMDs) holding a graphene like 2D structure, offer vast area of applications in nanoscale electronics. TMD based on MoS2, was thermally grown ITO coated substrate to perform as transparent switching layer. The structural and chemical properties synthesized MoS2 nanoparticles thin films have been studied by using x-ray diffraction analysis scanning electron microscopy, while memory application is manifested fabricating Al/MoS2/ITO devices. Detailed electrical...