A5032349909- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Ferroelectric and Piezoelectric Materials
- MXene and MAX Phase Materials
- Photonic and Optical Devices
- Cardiac Structural Anomalies and Repair
National Tsing Hua University
2021-2025
The structure of metal electrode/HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> (HZO)/AlON/n <sup xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -Si was employed as the platform to study how effective work function (EWF) electrode affects characteristics FTJ devices. By introducing TiAl into conventional TiN electrode, EWF is reduced which leads a higher tunnel electroresistance (TER) ratio 30 due improved LRS current arising...
Ferroelectric (FE) HfZrOx (HZO) integrated with ZrO2 interlayer and bottom layer was explored as the new stack (TiN/HZO/ZrO2/HZO/ZrO2/TiN) for FE capacitors processed at 400 °C. The show high remnant polarization (2Pr) of 37 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{C}$ </tex-math></inline-formula> /cm2 wake-up free behavior up to 108 long-pulse cycles. High orthorhombic phase (o-phase)...
A stack formed by consecutive deposition of 2 nm TaN/10 HfZrOx (HZO)/2 TaN in an ALD tool was proposed to be sandwiched between thick PVD TiN as the promising structure for ferroelectric capacitors (FeCAPs). Compared counterpart, exhibits a smaller coefficient thermal expansion and reduced lattice misfit electrode HZO, enhancing remanent polarization (Pr). Additionally, demonstrates larger barrier height with respect contributing improved reliability. The advantages ALD-TaN FeCAPs over...
Inserting an ultrathin TiN interlayer into a ferroelectric HfZrOx (HZO) film of 10 nm by in situ ALD was proposed to implement capacitors (FeCAPs) this work. The FeCAPs with the structure TiN/HZO/TiN/HZO/TiN show high remanent polarization (2Pr) 32.6 μC/cm2 at low operating voltage 2 V and pulse width 5 μs. Compared those without interlayer, work shows Pr enhancement 2.2× under partial-switching conditions (2 V/5 μs) 50% reduction achieve comparable full-switching. This also demonstrates...