A5029554516- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Ferroelectric and Piezoelectric Materials
- Electronic and Structural Properties of Oxides
- Semiconductor Quantum Structures and Devices
- Silicon Nanostructures and Photoluminescence
- Photonic and Optical Devices
- MXene and MAX Phase Materials
- Thin-Film Transistor Technologies
- Copper Interconnects and Reliability
- Integrated Circuits and Semiconductor Failure Analysis
- ZnO doping and properties
- Quantum Dots Synthesis And Properties
- Advanced Semiconductor Detectors and Materials
- GaN-based semiconductor devices and materials
- X-ray Diffraction in Crystallography
- Silicon and Solar Cell Technologies
- Transition Metal Oxide Nanomaterials
- Crystallization and Solubility Studies
- Microwave Engineering and Waveguides
- Semiconductor Lasers and Optical Devices
- Nanowire Synthesis and Applications
National Tsing Hua University
2016-2025
National Yang Ming Chiao Tung University
1999-2019
National Hsinchu University of Education
2015-2019
ORCID
2016
California Institute of Technology
2004-2011
Missouri University of Science and Technology
2010-2011
Cornell University
2011
Purdue University West Lafayette
2010
Nanyang Technological University
2008
National University of Singapore
2008
Electrical and reliability properties of ultrathin La <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> gate dielectric have been investigated. The measured capacitance 33 /spl Aring/ is 7.2 μF/cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> that gives an effective K value 27 equivalent oxide thickness 4.8 Aring/. Good integrity evidenced from the low leakage current density...
The reversible and fast phase transitions induced by picosecond electrical pulses are observed in the nanostructured GeSbTe materials, which provide opportunities application of high speed nonvolatile random access memory devices. mechanisms for transition discussed based on investigation correlation between material size. With shrinkage dimensions, size effects play increasingly important roles enabling ultrafast under activation. understanding how contribute to is great importance...
TiN/ferroelectric-HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> (FE-HZO)/TiN capacitors were employed as the platform to investigate impact of plasma treatment on reliability FE-HZO. NH xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> at different HZO/TiN interfaces was carried out study dependence oxygen vacancies (Vo) FE behaviors against cycling. It has been electrically confirmed that HZO free from wake-up and fatigue...
A thin film of AlON with a nitrogen concentration 13% was developed as the interfacial layer (IL) HfZrOx-based ferroelectric field-effect transistor (FeFET) memory devices on Si substrate. Compared to conventional SiO2/SiON IL, due higher dielectric constant value that allows smaller voltage drop across it and larger valence band offset (ΔEv) respect along prominent passivation dangling bonds effectively suppress hole trapping, IL demonstrate large window (MW) 3.12 V by ±4 gate sweeping,...
<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$hboxTaN/hboxSrTiO_3/hboxTaN$</tex> capacitors with a capacitance density of 28–35 xmlns:xlink="http://www.w3.org/1999/xlink">$hboxfF/muhboxm^2$</tex> have been developed by using high- xmlns:xlink="http://www.w3.org/1999/xlink">$kappa (kappa = hbox147-hbox169) hboxSrTiO_3$</tex> dielectric containing nanometer-sized microcrystals (3–10 nm). A small effective thickness was achieved reducing the...
Without destabilizing the ferroelectric (FE) phase, high-k AlON with [N] of ~ 13 % was proposed as interfacial layer (IL) between FE HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> (HZO) and Si substrate for FeFET memory to enhance window (MW) while improving reliability compared SiO xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> IL. The AlON-based shows promising performance in terms a large MW 3.1 V by ±4 operation, long...
Ferroelectric HfZrOx (Fe-HZO) with a larger remnant polarization (Pr) is achieved by using poly-GeSn film as channel material compared poly-Ge because of the lower thermal expansion that induces higher stress. Then two-stage interface engineering junctionless (Sn ∼5.1%) ferroelectric thin-film transistors (Fe-TFTs) based on HZO was employed to improve reliability characteristics. With stage I NH3 plasma treatment and subsequent II Ta2O5 interfacial layer growth, quality between Fe-HZO...
We fabricated the HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) ferroelectric fin field-effect transistors (Fe-FinFET) with width of 60 nm and gate length 100 for nonvolatile memory operations. The Fe-FinFET exhibited a large window (MW) 1.5 V high (100 ns) program/erase speeds at ±5 V. After 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> cycles, MW was maintained 1.09 retention time measured up to...
The metal-insulator-metal (MIM) capacitor for analog and rf applications has been developed with ZrO2∕Al2O3∕ZrO2 laminate as the dielectric. high capacitance density of 21.54fF∕μm2 can be achieved due to tetragonal ZrO2 which makes higher dielectric constant 38.7. This MIM also demonstrates quadratic voltage coefficient 2443ppm∕V2 good leakage current 2.11×10−6A∕cm2 at 2V is ascribed inserted Al2O3. Since Schottky emission suggested major conduction mechanism, a further reduced...
The Si-based n- and p-FeFET with 5-nm ferroelectric (FE) HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> (HZO) high-k AlON interfacial layer (IL) were fabricated for the comparison of memory characteristics reliability. window (MW) 1.37 V 1.25 are obtained by respectively applying pulses ±3.8 V/ 50 μ s. typical MW asymmetry both types FeFETs is significantly reduced which attributed to remanent polarization ( P...
HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based ferroelectric field-effect transistors (FeFET) on Si were employed as the platform to investigate impact of <sup xmlns:xlink="http://www.w3.org/1999/xlink">60</sup> Co γ-rays radiation memory characteristics. For pristine state, window by ±4 V sweeping for non-irradiated devices is 1.48 which does not degrade with 300-krad and 10-Mrad dose even though remnant polarization (P...
The structure of metal electrode/HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> (HZO)/AlON/n <sup xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -Si was employed as the platform to study how effective work function (EWF) electrode affects characteristics FTJ devices. By introducing TiAl into conventional TiN electrode, EWF is reduced which leads a higher tunnel electroresistance (TER) ratio 30 due improved LRS current arising...
Instead of employing post metal annealing (PMA), deposition (PDA) was proposed to crystalize HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> (HZO) into the ferroelectric phase on an epitaxial Ge film with higher reliability. Due absence top electrode/HZO reaction during annealing, PDA-processed HZO intrinsically possesses a better capability control amount oxygen vacancies ( <inline-formula...
Ferroelectric (FE) HfZrOx (HZO) integrated with ZrO2 interlayer and bottom layer was explored as the new stack (TiN/HZO/ZrO2/HZO/ZrO2/TiN) for FE capacitors processed at 400 °C. The show high remnant polarization (2Pr) of 37 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{C}$ </tex-math></inline-formula> /cm2 wake-up free behavior up to 108 long-pulse cycles. High orthorhombic phase (o-phase)...
Abstract While n‐FeFET memory devices have shown promising characteristics for data storage and neuromorphic computing, implementing such with a Ge channel, which is expected to be adopted in advanced technology nodes, has never been reported due the challenges achieving desirable interface quality. In this work, ferroelectric HfZrO x (HZO) integrated high‐k Al 2 O 3 /AlN interfacial layer (IL), along microwave annealing (MWA), implement devices, their reliability characteristics, as well...
Using nanocrystal (nc) TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and TaON buffer layer, the Ni/GeO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /nc-TiO /TaON/TaN resistive random access memory (RRAM) showed forming-free switching, self compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, long 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> cycling endurance. The very...
AlON/HfZrOx (HZO)/HfO2 stack with post-deposition annealing (PDA) process at 400 °C is proposed to implement BEOL compatible ferroelectric (FE) capacitors. While interface engineering by AlON and HfO2 enhances <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{P}_{\text {r}}$ </tex-math></inline-formula> enable more bits storage, PDA reduces oxygen vacancies in the HZO eliminating reaction between top...
High quality La/sub 2/O/sub 3/ and Al/sub are fabricated with EOT of 4.8 9.6 /spl Aring/, leakage current 0.06 0.4 A/cm/sup -2/ D/sub it/ both 3/spl times/10/sup 10/ eV/sup -1//cm/sup 2/, respectively. The high K is further evidenced from MOSFET's I/sub d/ g/sub m/ low OFF/. Good SILC Q/sub BD/ obtained comparable SiO/sub 2/. due to the thermodynamic stability in contact Si stable after H/sub 2/ annealing up 550/spl deg/C.
Employment of a tetragonal ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> film as the charge-trapping layer for nonvolatile memory was investigated and NH xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> nitridation effect on performance also explored in this letter. The permittivity is slightly reduced from 38.7 to 36.9 after nitridation; nevertheless, introduces more trapping sites passivates grain boundary channel which results...
Abstract We measured interfacial tensions (IFT) of aqueous alkyl polyglucoside (APG) systems formulated with sorbitan ester-type cosurfactants against n-octane. The study focused on low to ultra-low IFT which are relevant for enhanced oil recovery (EOR). In addition, we equilibrium adsorption concentrations these surfactants and onto kaolinite clay, commonly found in reservoirs. present one surfactant EOR laboratory flood experiment selected APG-sorbitan ester formulation recovered 94%...
A Ge-stabilized tetragonal ZrO2 dielectric with a permittivity (κ) value of 36.5 has been obtained by annealing ZrO2/Ge/ZrO2 laminate at 500 °C and it is more reliable approach toward stabilizing film. However, metal-insulator-metal (MIM) capacitors the sole film as an insulator achieve high capacitance density 27.8 fF/μm2 price degraded quadratic voltage coefficient (VCC) 81 129 ppm/V2 unacceptably leakage current. By capping amorphous La-doped layer κ 26.3 to block grain boundaries-induced...