A5007645401- Semiconductor materials and devices
- Ferroelectric and Piezoelectric Materials
- Electronic and Structural Properties of Oxides
- Ferroelectric and Negative Capacitance Devices
- Acoustic Wave Resonator Technologies
- Advancements in Battery Materials
- Advanced Battery Technologies Research
- GaN-based semiconductor devices and materials
- Supercapacitor Materials and Fabrication
- Image Retrieval and Classification Techniques
- Advanced Image and Video Retrieval Techniques
- Hydrogels: synthesis, properties, applications
- Supramolecular Self-Assembly in Materials
- Advanced Data Storage Technologies
- Electrocatalysts for Energy Conversion
- Advancements in Semiconductor Devices and Circuit Design
- Reliability and Maintenance Optimization
- Copper Interconnects and Reliability
- 3D IC and TSV technologies
- Nanoparticle-Based Drug Delivery
- Text and Document Classification Technologies
Xi'an Jiaotong University
2024
National Yang Ming Chiao Tung University
2000-2004
Electrical and reliability properties of ultrathin La <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> gate dielectric have been investigated. The measured capacitance 33 /spl Aring/ is 7.2 μF/cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> that gives an effective K value 27 equivalent oxide thickness 4.8 Aring/. Good integrity evidenced from the low leakage current density...
We have developed a single transistor ferroelectric memory using stack gate PZT/Al/sub 2/O/sub 3/ structure. For the same /spl sim/40 Aring/ dielectric thickness, 3//Si has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO/sub 2//Si. Besides, MOSFET also shows large output current difference between programmed on state erased off state. The <100 us erase time is faster that flash where switching limited by time.
The management of brain tumors presents numerous challenges, despite the employment multimodal therapies including surgical intervention, radiotherapy, chemotherapy, and immunotherapy. Owing to distinct location presence blood-brain barrier (BBB), these exhibit considerable heterogeneity invasiveness at a histological level. Recent advancements in hydrogel research for local treatment have sought overcome primary challenge delivering therapeutics past BBB, thereby ensuring efficient...
The authors have obtained good MIM capacitor integrity of high-capacitance density 10 fF/μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> using high-/spl kappa/ AlTaO/sub x/ fabricated at 400/spl deg/C. In addition, small voltage dependence capacitance <600 ppm (quadratic coefficient only 130 ppm/V ) is 1 GHz their mathematical derivation from measured high-frequency S parameters. These results ensure the technology useful for...
The integrity of the metal-insulator-metal (MIM) capacitor with high-k dielectrics formed using a 400°C back-end process was investigated. A very high capacitance per unit area 9.2 fF/μm2 achieved for MIM capacitors at 1 MHz, significantly reducing chip size radio frequency (rf) circuits. mathematical derivation, involving measured S parameters, yielded small voltage-dependent ppm GHz, indicating that precision circuit can be applied in rf regime. Furthermore, such density maintained as is...
Very high capacitance density of 10 fF//spl mu/m/sup 2/ is measured using high-/spl kappa/ AlTaO/sub x/, with small reduction 5% from KHz to 30 GHz, low loss tangent < 0.03, and process compatible existing VLSI back-end integration. Small voltage dependence 600 ppm, mathematical derived S-parameters, obtained at 1 which ensures this MIM capacitor useful for precision circuits operated RF regime.
We have compared the memory performance of one-transistor ferroelectric MOSFET (FeMOSFET) with stacked Pb(Zr,Ti)O/sub 3/ (PZT), SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT), and Bi/sub 3.75/La/sub 0.25/Ti/sub 3/O/sub 12/ (BLT)/40 /spl Aring/-Al/sub gate dielectrics. The SBT/Al/sub FeMOSFET has largest I/sub ON//I/sub OFF/ greater than 2 orders magnitude, PZT/Al/sub fast 10 ns program/erase time, >10/sup 11/ endurance, years retention.
In this paper, we introduce the dotted pattern-avoiding map $s_{\dot{\tau}}$, which avoids pattern $\dot{\tau}$ instead of descents as West's stack-sorting $s$ does. We also extend machine, is composed a $\sigma$ avoiding and $s$, to machine. prove analogs classical results on stack sorting for length $2$ maps. end with several conjectures.
It is desirable to achieve both fast data access time and long retention simultaneously. We have developed a 1T PZT/40 Å-Al/sub 2/O/sub 3/ memory very write (program/erase) <100 ns, years retention, good endurance >10/sup 10/ P/E cycles. The small size highly competitive with other technologies.