A5059457390- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Electronic and Structural Properties of Oxides
- Silicon and Solar Cell Technologies
- Advanced biosensing and bioanalysis techniques
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Ferroelectric and Piezoelectric Materials
- Mast cells and histamine
- Transition Metal Oxide Nanomaterials
- Nanocluster Synthesis and Applications
- Copper Interconnects and Reliability
- Infant Nutrition and Health
- Biosensors and Analytical Detection
- MXene and MAX Phase Materials
- CCD and CMOS Imaging Sensors
- Supramolecular Self-Assembly in Materials
- Integrated Circuits and Semiconductor Failure Analysis
- Electrochemical sensors and biosensors
- Electrostatic Discharge in Electronics
- Ga2O3 and related materials
- Microwave Engineering and Waveguides
- Graphene research and applications
National Yang Ming Chiao Tung University
2014-2018
National Hsinchu University of Education
2018
National Tsing Hua University
2006-2013
Institute of Electronics
2007
The University of Texas at Dallas
2006
High performance novel RRAM of 0.3 μW set power (0.1 μA at 3 V), 0.6 nW reset (-0.3 nA -1.8 fast 20 ns switching time, ultra-low 6 fJ energy, large 7×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> resistance window for 10 xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> sec retention 125°C, and xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cycling endurance were measured simultaneously. This is the first time that energy new...
We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset (0.12 nA 0.13 large extrapolated 10-year on/off retention window × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> 85°C, good xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide low cost electrodes.
We report Ir/TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /TaN metal-insulator-metal capacitors processed at only 300degC, which show a capacitance density of 28 fF/mum <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and leakage current 3 times 10 xmlns:xlink="http://www.w3.org/1999/xlink">-8</sup> (25degC) or 6 xmlns:xlink="http://www.w3.org/1999/xlink">-7</sup> (125degC) A/cm -1 V. This performance is due to the combined...
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> We have studied the nitrogen composition dependence of characteristics TaN/HfLaON/ <formula formulatype="inline"><tex>$\hbox{Hf}_{1 - x y}\hbox{N}_{x}\hbox{O}_{y}/\hbox{SiO}_{2}/\hbox{Si}$</tex> </formula> MONOS memory devices. By increasing N in formulatype="inline"><tex>$ \hbox{Hf}_{1 y}\hbox{N}_{x}\hbox{O}_{y}$</tex> trapping layer, both window and high-temperature retention improved. The...
Using stacked covalent-bond-dielectric GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> , on metal-oxynitride HfON, the Ni/GeO /HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset 0.6 nW (-0.3 nA -1.8V), fast 20-ns switching time, 8-fJ energy (4-V overstress), and excellent 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cycling endurance. Such performance was reached by...
Using nanocrystal (nc) TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and TaON buffer layer, the Ni/GeO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /nc-TiO /TaON/TaN resistive random access memory (RRAM) showed forming-free switching, self compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, long 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> cycling endurance. The very...
We have fabricated high-kappa Ni/TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /ZrO /TiN metal-insulator-metal (MIM) capacitors. A low leakage current of 8 times 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">-8</sup> A/cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 125degC was obtained with a high 38- fF/mum capacitance density and better than the ZrO MIM The excellent device performance is due to lower electric...
We report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeOx on metal-oxide SrTiOx to form the cost-effective Ni/GeOx/SrTiOx/TaN random access memory, ultralow set power of small 1 μW (0.9 μA at 1.2 V), reset 13 pW (0.13 nA 0.1 fast 50 ns switching time good 106 cycling endurance are realized.
Using novel stacked covalent-bond-dielectric GeO <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> (GeO) on metal-oxide SrTiO <sub xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an ultralow set power of small 4 μW (3.5 μA at 1.1 V), reset 16 pW (0.12 nA 0.13 and large 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> memory window for...
Novel MONOS CTF, with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125°C and excellent 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> endurance fast 100 µs ±16 program/erase. This is achieved using an As+-implanted higher к layer deep 5.1 eV work-function of As. In contrast, the un-implanted device only small 1.9 125°C.
In this article, we describe our successful fabrication of a metal–insulator–metal (MIM) capacitor with low voltage nonlinearity. A leakage current at and small were obtained high density for MIM capacitor. The thick dielectric was much better than the reported dielectrics , similar κ-value (15–20). good analog performance due to combined effect work-function metals.
A spacer-enhanced FITC-labeled peptide self-assembled onto AuNPs was fabricated as a chymotrypsin activated fluorescent AuNP probe and used for the diagnosis of pancreatitis with fecal specimens.
We report a new charge-trap-engineered flash non-volatile memory that has combined 5nm Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> and 0.9nm EOT HfON trapping layers, within double-barrier double-tunnel layers. At 150°C under 100μs ±16V P/E, this device showed good integrity of 5.6V initial ΔV xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> window 3.8V 10-year extrapolated...
In this letter, we report a low threshold voltage ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> ) of 0.12 V in self-aligned gate-first TaN/LaTiO n-MOSFETs, at an equivalent oxide thickness only 0.63 nm. This was achieved by using Ni-induced solid-phase diffusion SiO xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -covered Ni/Sb that reduced the high-kappa dielectric interfacial reactions.
We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 μW switching power (1.6 μA at 3 V; -0.5 nA -2 V), excellent 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> cycling endurance, large on/off retention window >;10 xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> even 85°C, and fast 50 ns for the first time. These were achieved using Ni/GeO <sub...
In this letter, the authors introduce a novel self-aligned etch-stopper sidewall-contact hydrogenated amorphous silicon (a-Si : H) thin-film transistor (ESSC-TFT), which reduces photo leakage current by more than one order of magnitude and increases on-off ratio to seven orders under back light illumination. Such TFT will enable high-resolution high-brightness liquid-crystal displays (LCDs) for next-generation TV, monitor, notebook, mobile-phone applications. This ESSC-TFT design volume a-Si...
We have fabricated the [TaN-Ir <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Si]-HfAlO-LaAlO -Hf xmlns:xlink="http://www.w3.org/1999/xlink">0.3</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">0.2</sub> -HfAlO-SiO xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -Si double quantum-barrier charge- trapping memory device. Under fast 100 mus and low plusmn8 V program/erase (P/E)...
We have studied the stress reliability of high-kappa Ni/TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /ZrO /TiN metal-insulator-metal capacitors under constant-voltage stress. The increasing TiO thickness on ZrO improves 125- <sup xmlns:xlink="http://www.w3.org/1999/xlink">deg</sup> C leakage current, capacitance variation (Delta <i xmlns:xlink="http://www.w3.org/1999/xlink">C</i> / ), and long-term reliability. For a high density...
In this article, we investigate the frequency-dependent voltage nonlinearity effect of high-κ and radio-frequency (rf) metal-insulator-metal (MIM) capacitors by electrical thermal stresses. The experimental results demonstrated that MIM-related capacitance properties, dependence frequency, are not only affected intrinsic dielectric properties but also shared extrinsic effect, which possibly originated from oxygen vacancies or electrode polarization. high work-function Ni can prevent...
We have fabricated high-κ metal–insulator–metal (MIM) capacitors. A low leakage current of at was obtained for a capacitance density. For density device, small voltage coefficient α and temperature were measured.
Gold nanoparticles (AuNPs) can be applied in biosensors using fluorescence resonance energy transfer (FRET) technique. Based on this technique, we have established a sensitive and efficient biosensing method by modifying peptide-probe onto AuNPs to detect proteinase enzyme activity study. This was designed for chymase detection kidney disease diagnosis. In study, 16 nm-AuNPs were used construct the AuNPs-based peptide probe (named AuNPs-peptide probe) determination. The sequence is...
We have studied the performance of double-quantum-barrier [TaN-Ir <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Si]-[HfAlO-LaAlO ]-Hf xmlns:xlink="http://www.w3.org/1999/xlink">0.3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">0.2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> -[HfAlO-SiO xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ]-Si charge-trapping memory devices. These devices display good characteristics...
We report low-threshold-voltage ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Vt</i> ) TaN/HfLaO xmlns:xlink="http://www.w3.org/1999/xlink">n</i> -MOSFETs using solid-phase-diffusion (SPD)-formed junctions at a low temperature of 650 <sup xmlns:xlink="http://www.w3.org/1999/xlink">deg</sup> C. The gate-first and self-aligned Ni/Sb SPD-formed source-drain showed 0.16 V peak electron mobility 187 cm...