A5029583354- Semiconductor materials and devices
- Advancements in PLL and VCO Technologies
- VLSI and Analog Circuit Testing
- Wireless Signal Modulation Classification
- Educational Systems and Policies
- Advanced Sensor and Control Systems
- Semiconductor Lasers and Optical Devices
- Technology and Data Analysis
- Advanced SAR Imaging Techniques
- Advanced Photonic Communication Systems
- Photonic and Optical Devices
- Innovation in Digital Healthcare Systems
Samsung (South Korea)
2017-2018
The graphic DRAM standard GDDR6 is developed to overcome the limitation of previous standards GDDR5/5X for achieving high-speed operation. This paper introduces 16-Gb with a per-bit trainable single-ended decision feedback equalizer (DFE), reference impedance (ZQ)-coded transmitter, and phase-locked loop (PLL)-less clocking I/O speed by process. Furthermore, this optimizes clock- power-domain crossings adopts split-die architecture improve signal integrity (SI). operates 16 Gb/s/pin 1.15 V...
Starting at 512Mb 6Gb/s/pin [1], GDDR5's speed and density have been steadily developing for about 10 years; recently achieving 8Gb 9Gb/s/pin [2] with per-pin timing training. Although GDDR5X can operate 12Gb/s [3] by increasing the burst length (BL) from 8 to 16, a degradation in system performance data granularity of 64B is seen. The I/O specification, using PLL clocking that additionally causes jitter, has not changed much compared GDDR5. To overcome these issues, GDDR6 introduced dual...
With the growth of wearable devices, such as smart watches and glasses, there is an increasing demand for lower power dissipation, to achieve longer battery life with limited capacity. Nevertheless, memory bandwidth needs increase support high-resolution graphic engines. Since most devices are event driven, they consume a bulk in standby mode. Therefore, it crictical reduce standby-mode power, well improve active-mode efficiency. However, DRAM's periodic self-refresh, critical data...