Bing-Rui Lu

ORCID: 0000-0001-7686-0734
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About
Contact & Profiles
Research Areas
  • Plasmonic and Surface Plasmon Research
  • Optical Coatings and Gratings
  • Nanofabrication and Lithography Techniques
  • Photonic Crystals and Applications
  • Advancements in Photolithography Techniques
  • Photonic and Optical Devices
  • Nanowire Synthesis and Applications
  • Metamaterials and Metasurfaces Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Surface Polishing Techniques
  • Rice Cultivation and Yield Improvement
  • Microfluidic and Capillary Electrophoresis Applications
  • Gold and Silver Nanoparticles Synthesis and Applications
  • Force Microscopy Techniques and Applications
  • Ga2O3 and related materials
  • Advanced Sensor and Energy Harvesting Materials
  • Acoustic Wave Resonator Technologies
  • GABA and Rice Research
  • Integrated Circuits and Semiconductor Failure Analysis
  • Thin-Film Transistor Technologies
  • Surface Modification and Superhydrophobicity
  • Semiconductor materials and devices
  • Adhesion, Friction, and Surface Interactions
  • Dielectric materials and actuators
  • Mechanical and Optical Resonators

State Key Laboratory of ASIC and System
2011-2022

Fudan University
2013-2022

Shanghai Fudan Microelectronics (China)
2008-2013

Rutherford Appleton Laboratory
2009-2011

We present transmissive plasmonic structural colors from subwavelength nanohole arrays with bottom metal disks for scaled-up manufacturing by nanoimprint lithography (NIL). Comprehensive theoretical and experimental studies are carried out to understand the specific extraordinary optical transmission behavior of structures such disks. Distinctive covering entire visible spectrum can be generated changing dimensions hole in Ag covered The energy hybridization theory is applied explain...

10.1364/ol.41.001400 article EN Optics Letters 2016-03-16

An improved architecture for all-Si based photoelectronic detectors has been developed, consisting of a specially designed metasurface as the antenna integrated into Si nanowire array on insulator by an electron beam lithography self-alignment process. Simulation using Finite Difference Time Domain (FDTD) method was carried out to ensure perfect absorption light detector. Optic measurement shows 90% at 1.05 μm. Photoelectronic characterization demonstrates responsivity and detectivity high...

10.1021/acsnano.9b04236 article EN ACS Nano 2019-07-03

A CMOS-compatible photodetector with high responsivity is reported. This device utilizes the unique interface coupling effect found in fully depleted silicon on insulator (SOI) MOSFETs. Unlike conventional SOI photodetectors, proposed shows higher photoresponsivity thinner Si films due to stronger coupling, as confirmed by TCAD simulations. prototype fabricated a simplified process flow achieves record up <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/jeds.2017.2788403 article EN cc-by-nc-nd IEEE Journal of the Electron Devices Society 2018-01-01

Abstract Photogating detectors based on 2D materials attract significant research interests. However, most of these photodetectors are only sensitive to the incident intensities and lack ability distinguish different wavelengths. Color imaging usually requires additional optical filter arrays collect red, green, blue (RGB) colors in restore true color one pixel. In this study, an MoS 2 /HfO /silicon‐on‐insulator field effect phototransistor with wavelength distinguishing is presented, where...

10.1002/adfm.201906242 article EN Advanced Functional Materials 2019-09-09

This work developed an all-Si photodetector with a surface plasmonic resonator formed by sub-wavelength Au grating on the top of Si-nanowire array and same one beside wires. The Au/Si interface Schottky barrier allows photo-electron detection in near-infrared wavelength based internal emission hot electrons generated plasmons cavity. Meanwhile, Si nanowire acts as polarizer for polarimetric detection. Finite-difference time-domain method was applied design novel device state-of-art...

10.1186/s11671-019-2868-3 article EN cc-by Nanoscale Research Letters 2019-01-30

Direct proof of the structural blue/green color <italic>via</italic> lithographically-replicated PMMA/air multilayers, analogous to those in real Morpho butterfly wings.

10.1039/c6nr00936k article EN Nanoscale 2016-01-01

Abstract At present, dual‐channel or even multi‐channel recording is a developing trend in the field of photodetection, which widely applied environment protection, security, and space science technology. This paper proposes novel MoS 2 /InAlAs/InGaAs n–i–n heterojunction phototransistor by integrating multi‐layered with InGaAs‐based high electron mobility transistors (InGaAs‐HEMTs). Due to internal photocurrent amplification InGaAs channels narrow energy bandgap 0.79 eV, this device...

10.1002/adom.201901039 article EN Advanced Optical Materials 2019-09-10

Hydrogen silsesquioxane (HSQ) is a material with the potential for studying effect of surface stiffness on stem cell differentiation. Here, effects electron beam dose topography and mechanical properties HSQ obtained or without trimethylamine (TMA) development are characterised by atomic force microscopy imaging indentation. A correlation between (uniform across sample) exposure observed. Surface roughness samples developed in TMA decreases exponentially increasing exposure. coating plasma...

10.1016/j.tsf.2010.10.054 article EN cc-by Thin Solid Films 2010-11-17

We optimized a Berry-phase-based metasurface for high quality vortex generation in optical frequencies with &gt;20% efficiency enhancement broad waveband.

10.1039/c8nr02088d article EN Nanoscale 2018-01-01

In this paper, the application of zero subthreshold swing and impact ionization FET (Z <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> -FET) for photodetection is studied with TCAD simulation. Dynamic coupling effect utilized to form carrier injection barriers in partially depleted silicon-on-insulator (PD-SOI) film. Photoelectron accumulation at front gate interface lowers hole barrier modulates turn-on voltage. The light-triggering...

10.1109/jeds.2019.2918203 article EN cc-by-nc-nd IEEE Journal of the Electron Devices Society 2019-01-01

Due to the perfection of nanofabrication in nanotechnology and nanoscience, ice lithography (IL) by patterning thin-films with a focused electron beam, as significant derivative technology beam (EBL), is attracting growing attention, evoked its advantages over traditional EBL respects situ-fabrication, high efficiency, accuracy, limited proximity effect, three-dimensional (3D) profiling capability, etc. However, theoretical modeling for replicated profiles on resist (amorphous solid water,...

10.1039/d2nr00594h article EN Nanoscale 2022-01-01

We report our work on the development of subwavelength gold pillar arrays as local surface plasmonic (LSP) resonators for sensor applications. These are fabricated by electron beam lithography combined with electroplating. The conical shape, instead flat one, top Au pillars, induced uneven current density in plating, may affect LSP resonance (LSPR). This paper aims to carry out a systematic study LSPR behavior nanopillar both and shapes top, trying prove feasibility developed nanoprocess....

10.1364/ao.54.002537 article EN Applied Optics 2015-03-19
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