A novel process for the passivation of mirror facets Al-free active-region high-power semiconductor diode lasers is presented. Designed technological simplicity and minimum damage generated within facet region, it combines laser bar cleaving in air with a two-step consisting 1) removal thermodynamically unstable species 2) sealing layer. Impurity achieved by irradiation beams atomic hydrogen, while zinc selenide used as passivating medium. The effectiveness demonstrated operation 808-nm...

We report further progress in the design and fabrication of high-order Bragg gratings defined by I-line projection lithography that are implemented a high-power diode laser. Simulations surface with large duty cycles predict reflectivities even for 25th order. such lasers compared spectral electro-optical properties having seventh-order gratings. Details encapsulation will also be presented.

High power diode lasers have become more and important to industrial medical applications. In contrast low applications, long cavity or laser bars are used in this field mounting quality influences considerably performance life time. paper we focus on the solder metallurgy stress-induced behavior after mounting. The chips been bonded fluxless epi-side down translucent cubic boron nitride (T-cBN) using Au/Sn solder. has tested with different chip metallizations preserving eutectic composition...

High power broad area diode lasers provide the optical energy for all high performance solid state and fiber laser systems. The maximum achievable density from such systems is limited at source by of lasers. A crucial metric reliable continuous wave output a single diode, typically stripe widths in 90-100 μm range, which especially important users relying on fibered multi-mode pumps. We present results study investigating limits 980nm sources. find that 96μm emitters 20°C operate under 20W...

Distributed Bragg reflector tapered lasers emitting at a wavelength of about 1060 nm were realized. The expitaxial layer structure leads to vertical far-field angle 15 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">deg</sup> (full-width half-maximum). devices with total length 4 mm consist 2-mm-long ridge waveguide and sections. input currents both sections can be independently controlled. laser reached 5-W output power narrow spectral...

We report on broad-area distributed Bragg reflector (DBR) lasers with a stripe width of 90 ¿m providing up to 14-W optical power and 50% maximum conversion efficiency. Ninety-five percent the is included within wavelength range less than 1 nm. The shift between threshold output 3.5 stabilization achieved 500-¿m -long DBR containing sixth-order grating defined by i-line wafer stepper lithography fabricated reactive ion etching.

The development of high-power GaAs-based ridge wave guide distributed feedback lasers is described. emit between 760 nm and 980 either in TM or TE polarization. Over a large current range, the exhibit stable operation single transversal longitudinal mode. A maximum continuous-wave output power about 400 mW, spectral linewidth below 1 MHz side mode suppression ratio greater than 50 dB have been demonstrated at room temperature. provided by first second order gratings, formed an...

A semiconductor-based master-oscillator power-amplifier operating at 977 nm is demonstrated to emit more than 10 W continuous wave in a nearly diffraction limited beam with narrow spectral bandwidth. The device consists of distributed Bragg reflector laser and flared amplifier monolithically integrated on single chip.

A spectrally adjustable monolithic dual-wavelength diode laser at 785 nm as an excitation light source for shifted Raman difference spectroscopy (SERDS) is presented. The spectral distance between the two wavelengths can be electrically adjusted 0 and 2.0 using implemented heater elements above distributed Bragg reflector (DBR) gratings. Output powers up to 180 mW a temperature of 25°C were measured. width smaller than 13 pm, limited by spectrum analyzer. device well-suited spectroscopy,...

High power, high beam quality and narrow, stable spectra are achieved simultaneously using a truncated-tapered optical amplifier in master-oscillator power amplifier-system. We compare the influence of lateral geometric design on performance, by devices with super large waveguide (4.8 μm) relative low confinement factor (Γ = 1%) . find that use an larger active region results both quality. An abandonment cavity spoiling grooves leads to strongly improved characteristics.

High-brightness narrow line-width 1060 nm tapered lasers with an internal distributed Bragg reflector were realized. The devices reach a maximal output power of 12 W spectral below 40 pm (95% power). A nearly diffraction limited beam quality was measured up to 10 W. vertical structure is based on InGaAs triple quantum well (TQW) active region embedded in 4.8 μm broad AlGaAs super large optical cavity. This leads divergence 15° (FWHM). Tapered processed total length 6 mm consisting 2 long...

For a maximum fiber-coupled power, high power broad-area diode lasers must operate with small lateral far-field divergence at continuous wave (CW) powers. However, these structures are laterally multi-moded, low beam quality and wide emission angles. We present new approach to suppress higher-order modes based on an anti-guiding layer refractive index inserted the edges of active stripe. Simulations planar waveguides containing germanium layers reveal that strong mode-coupling effects occur....

Surface recombination velocities and surface temperatures at front facets of standard broad-area lasers emitting 808nm were investigated by time-resolved two-color photoluminescence micro-Raman spectroscopy. in the range between &amp;lt;105 106cm∕s are determined for devices with tailored properties. The results clearly show that increased accompanied facet temperatures. Reabsorption light generated diode leads to an additional enhancement heating surfaces minor structural quality....

Compact laser sources with long coherence lengths in the visible spectral region are sought for many applications. This letter presents distributed-Bragg-reflector (DBR) ridge-waveguide (RW) lasers an emission wavelength at 633 nm and optical output power >20 mW. The DBR-RW exhibit a technical linewidth full width half maximum of ~1 MHz. line can be tuned via current temperature >200 GHz. At 14 mW, show preliminary lifetime 4000 h.

Wavelength stabilized distributed Bragg reflector (DBR) diode lasers at an emission wavelength of 785 nm will be presented. The devices have a 14 thick GaAsP single quantum well as active layer, which is embedded in Al0.65Ga0.35As waveguide layers and Al0.7Ga0.3As cladding layers. DBR structures are realized deeply etched tenth order gratings using I-line wafer stepper lithography. stripe width 2.2 µm cavity length 3 mm including grating with 500 µm. mounted p-side up on C-mounts. At...

Catastrophic optical mirror damage (COMD) is one of the main failure mechanisms limiting reliability GaAs based laser diodes. Here, we compare facet stability ZnSe-passivated ridge-waveguide lasers (RWLs) that are cleaved in air and subsequently cleaned using atomic hydrogen with RWLs ultra-high vacuum. vacuum show a superior performance reach power densities up to 58 MW/cm2 under extended continuous wave operation at 1064 nm. This attributed reduction defects interface between ZnSe as...

Y-branch coupled distributed-feedback lasers with 40th- and 80th-order surface Bragg gratings have been fabricated using a process based on I-line wafer stepper lithography. The devices allow dual wavelength lasing at around 975 nm. Wavelength spacing of 0.5 4 nm achieved by grating period differences 2.9 47.6 for the gratings, respectively. manufactured internal stabilization work as master oscillator power amplifiers two separate one common amplifier sections. We present optical output...

Edge emitting diode lasers with highly strained InGaAs quantum wells and GaAs waveguide layers at 1150 nm were investigated focusing on the impact of design laser performance. Using a thick layer broad area devices low vertical divergence 20/spl deg/ FWHM reliable operation power level 80-mW//spl mu/m stripe width demonstrated.

High-brightness tapered lasers emitting around 650 nm were developed. Devices 2 mm long with a200-microm-long straight section, 1800-microm-long and 4 degrees taper angle reached 1 W output power in CW operation a nearly diffraction-limited beam quality.

We present the results for high-power broad-area distributed feedback lasers with surface gratings of 80th, 135th, and 270th Bragg orders. A maximum output power 11 W a laser 80th order grating, emitting around 976 nm spectral width <; 1 has been achieved. Similar narrow linewidth operation occurs devices 135th from 7- to 11-W power. The technological approach fabricating these based on stepper lithography reactive ion etching is described.

Highly efficient single-spatial mode lasers with watt-level output power in the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${9xx}$ </tex-math></inline-formula> -nm wavelength range are of great interest for a variety applications. We experimentally investigate influence mesa widths on electro-optical properties ridge-waveguide lasers, based an extreme double asymmetric epitaxial structure. These are,...

Highly efficient 650-nm high-power broad-area laser diodes and bars with single quantum well InGaP wells embedded in AlGaInP waveguide layers, n-AlInP p-AlGaAs cladding layers are presented. Broad-area lasers that 100-mum wide reach output powers of 3 W conversion efficiencies about 40% at 15degC. For 5-mm (filling factor 20%), maximum 12 continuous-wave (CW) operation 55 quasi-CW mode were obtained. Reliable 5000 h 800 mW for emitters 5 will be reported.

Many solid state laser systems rely on transverse- magnetic polarized 808-nm diode lasers, whose efficiency is limited by the transparency current of quantum well and peak power facet failure. Using optimized epitaxial growth, low voltage designs, reflectivity, we demonstrate 70% conversion at 80 W in 1-cm bars under continuous-wave (CW) test conditions. We assess limits single emitters find that 100-mum stripe lasers roll thermally CW condition 13 without failure, then reach >50 300-ns...