A5010282370- Differential Equations and Boundary Problems
- Glioma Diagnosis and Treatment
- Differential Equations and Numerical Methods
- Superconducting Materials and Applications
- Cancer Cells and Metastasis
- Microtubule and mitosis dynamics
- Electron and X-Ray Spectroscopy Techniques
- Advanced Mathematical Modeling in Engineering
- Semiconductor materials and devices
- Physics of Superconductivity and Magnetism
- Integrated Circuits and Semiconductor Failure Analysis
- Cell Image Analysis Techniques
- Mechanical Systems and Engineering
- Magnetic properties of thin films
- Magnetic Properties and Applications
- Advanced Electron Microscopy Techniques and Applications
- Magnetic confinement fusion research
- Nanowire Synthesis and Applications
- Thin-Film Transistor Technologies
- Magnetic Properties of Alloys
- Electromagnetic Launch and Propulsion Technology
- Copper Interconnects and Reliability
- Numerical methods in inverse problems
- Heat Transfer and Mathematical Modeling
- Cancer, Stress, Anesthesia, and Immune Response
Kharkiv National University of Radio Electronics
2014-2024
V. N. Karazin Kharkiv National University
2014-2024
Moscow State Agroengineering University named after V.P. Goryachkin
2020-2022
Arsenal Biosciences (United States)
2022
California Pacific Medical Center
2022
Taras Shevchenko National University of Kyiv
1994-2020
Advanced Micro Devices (United States)
2002-2003
P.N. Lebedev Physical Institute of the Russian Academy of Sciences
1991-2001
Arizona State University
1996-1998
Philips (Netherlands)
1998
Strained-Si nMOSFETs with a standard polysilicon gate process were fabricated down to 25 nm length well-behaved characteristics and small difference in short channel effects. The performance enhancement degrades linearly as the becomes shorter, due not only parasitic resistance but also heavy halo implant. Thus key integration issues are how manage threshold As diffusion without excess doping. With comparable doping well controlled resistance, up 45% improvement drive current is predicted...
The dielectric and structural properties of LaAlO3 make it an attractive epitaxial gate oxide for nanometer-scale field effect transistors. However, the growth directly on Si has not been possible to date. In order achieve epitaxy, we use a SrTiO3 template layer whose thickness minimizes elastic strain atomic-level buckling at interface. We find that grown this is crystalline initially strained, but relaxes its bulk lattice constant within 7 unit cells. Cross-sectional transmission electron...
A study of epitaxial growth YBa2Cu3O7−δ films on oxidized Si with yttria- and zirconia-based buffer layers is reported. Using substrates either SiO2 free or naturally (100) surfaces it was found that a thin layer top the favors high-quality superconducting film formation. Compared to yttria-stabilized ZrO2 (YSZ) single layers, YSZ\Y2O3 double YSZ/Y2O3\YSZ triple allows deposition improved properties including reduced aging effects. In grown critical temperature Tc(R=0)=89.5 K current...
Article discusses use of mathematical modeling vehicle transmission in Simulink environment. Proposed approach makes it possible to reasonably select acceptable design variants at low cost. Studies individual factors influence on functional parameters KamAZ-4308 have been carried out. Blocks developed for determining moment resistance wheels when a is moving supporting surface, simulating clutch operation, calculating engine torque from its speed, gear shifting and dynamic model that allows...
Developed simulation model of the curvilinear motion two-axial wheel carrier with all steer wheels. The includes carrier’s center mass respect to moving coordinate system, matrix directional cosines for transition from a fixed bearing and running module determination reactions in flat spot tire surface area, mechanism turning aim is study vehicle steerability dexterity wheels via modeling MATLAB Simulink. Parameters obtained show application effectiveness steering control carrier. Results...
The effect of substrate temperature on the growth rate, crystal grain size, and SiO2 mask stability in selective epitaxial silicon carbide deposited from SiH4, C2H4, HCl1 dioxide masked (100) was examined. Depositing at atmospheric pressure a Cl/Si input ratio 50 to achieve good selectivity, increasing 950 1000 °C increased rate improved film’s surface morphology, but also enhanced degradation causing loss selectivity for long deposition times. For prolonged times °C, SiC nucleation occurred...
We describe the fabrication and operation of a polysilicon room-temperature memory device. The source-drain current-voltage characteristics this device, with floating gate, demonstrate periodic current steps as well hysteresis generic for Electron micrographs show that channel consists 3-5 nm silicon grains. A model single charge trapping controlled conduction through device is suggested.
A homogeneous Dirichlet problem for a semilinear elliptic equations with the Laplace operator and Helmholtz is investigated. To construct two-sided approximations to positive solution of this boundary value transition an equivalent nonlinear integral equation (with help Green-Rvachev's quasi-function) its subsequent analysis by methods theory semi-ordered spaces used. The work efficiency developed method are demonstrated computational experiment test exponential nonlinearity.
Context. The questions of constructing a two-sided iterative process for finding positive solution the first boundary value problem an ordinary second-order differential equation on basis method Green’s functions are considered. object study is purpose paper to develop twosided approximations by using methods nonlinear operators theory in semi-ordered spaces.Method. With function help original replaced equivalent integral equation, considered space continuous functions, which means cone...
We have investigated the roughness of top surface silicon dioxide deposited via a remote plasma enhanced chemical vapor deposition (RPECVD) process in microwave reactor. find roughening transition at temperature approximately 250 °C. Above this temperature, is fairly smooth (root mean square ∼0.3 nm). Below oxide becomes extremely rough. Rapid thermal annealing 900 °C does not eliminate roughness, which very nonuniform nanometer scale. For thin RPECVD applications, could be limitation. used...
We describe our institutional experience of developing a liquid biopsy approach using circulating tumor DNA (ctDNA) analysis for personalized medicine in cancer patients, focusing on the hurdles encountered during multistep process order to benefit other investigators wishing set up this type study their institution. Blood samples were collected at time surgery from 209 patients with one nine different types. Extracted and cell-free sequenced cancer-specific panels Illumina MiSeq machine....
Superconducting VBaCuO thin films grown in-situ by magnetron sputtering on mechanically polished (001) MgO substrates are examined transmission electron microscopy. The appear to be crystalline consisting of three main types epitaxial domains 90° -misoriented each other, which causes the typical feature these films, i.e., high density rotation twin-like boundaries. surface is not smooth resulting from different thicknesses with orientations. microstructure explained growth rate anisotropy...
Helical magnets have been manufactured of both high Tc and low materials. The helical are from solid hollow cylinders. A helix is machined in the cylinders, resulting one-layer solenoids. In this paper, results a BSCCO 2212 magnet discussed. has tested fields up to 15 T. Stability, quench protection, critical parameters determined. Results local heating magnet, propagation, studied. distributed method protection tested. may be used for large high-Tc magnets. details testing described.
Journal Article Estimation of the Electron Beam Energy Spread for TEM Information Limit Get access Michael A O'Keefe, O'Keefe National Center Microscopy, LBNL B72, One Cyclotron Road, Berkeley, CA 94720, USA Search other works by this author on: Oxford Academic Google Scholar Peter C Tiemeijer, Tiemeijer FEI Optics, Building AAEp, PO Box 80066, 5600 KA Eindhoven, The Netherlands Maxim V Sidorov Advanced Micro Devices, AMD Place, P.O. 3453, M/S 32, Sunnyvale 94088, Microscopy and...
The fabrication and structural characteristics of ultrathin nanocrystallization silicon films is reported. Amorphous Si layers, with nominal thicknesses in the range 3.5–11 nm, were deposited by low-pressure chemical vapor deposition onto amorphous SiO2 then crystallized using rapid thermal annealing at temperatures from 650 to 750 °C. High-resolution electron microscopy revealed that resulting comprised almost entirely nanocrystallites a small fraction remaining material. grain size...
This paper considers the application of method two-sided approximations for finding positive solutions to boundary value problems nonlinear elliptic differential equations with axial symmetry. The case Dirichlet conditions (first kind) is considered, a power-type monotone nonlinearity, where exponent ranges from 0 1. By transitioning polar coordinates in problem equation, due symmetry solution, reduced an ordinary equation on interval respect function that depends only radius, thus...
Работа посвящена вопросу развития и компоновке автомобилей с гибридной силовой установкой. В настоящее время наблюдается значительный рост их использования, который обосновывается высокими экономическими экологическими показателями. Экологические показатели достигаются путем снижением выбросов отработавших газов за счет применения преобразованной накопленной электрической энергии. Экономические рекуперации кинетической энергии, тем самым повышая топливную эффективность. При активном развитии...