Deborah A. Ryan

ORCID: 0000-0001-8876-0263
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About
Contact & Profiles
Research Areas
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advancements in Photolithography Techniques
  • Industrial Vision Systems and Defect Detection
  • Alzheimer's disease research and treatments
  • Electron and X-Ray Spectroscopy Techniques
  • Semiconductor materials and devices
  • Virus-based gene therapy research
  • Herpesvirus Infections and Treatments
  • Animal Virus Infections Studies
  • Advanced Surface Polishing Techniques
  • Non-Destructive Testing Techniques
  • VLSI and Analog Circuit Testing
  • Neuroinflammation and Neurodegeneration Mechanisms
  • Reflective Practices in Education
  • Ferroelectric and Negative Capacitance Devices
  • Nursing education and management
  • Cultural Competency in Health Care
  • VLSI and FPGA Design Techniques
  • Photoreceptor and optogenetics research
  • Sepsis Diagnosis and Treatment
  • Copper Interconnects and Reliability
  • Lymphoma Diagnosis and Treatment
  • Pneumonia and Respiratory Infections
  • Retinal Development and Disorders
  • Mentoring and Academic Development

Pacific Radiology (New Zealand)
2024

GlobalFoundries (United States)
2017-2021

IBM (United States)
2002-2015

University of Rochester Medical Center
2009-2014

University of Rochester
2007-2010

Emory University
1997-1998

Massachusetts Mental Health Center
1995

Community Health Center
1995

University of Chicago
1993

James A. Haley Veterans' Hospital
1988

Utzr has always had a profound and far-reaching impact on mankind. fie effects of combat upon the veteran continue to be explored interventions designed. rite male veteran’s symptoms that perpetuate his life also affect female partner family. A retrospective, descriptive study attempts explore document I) efects Post-Traumatic Stress Disorder (PTSD) Vietnam veteran, 2) presence any interrelated issues PTSD identified women’s issues, 3) relationship between woman’s coping skills. All...

10.3109/01612848809140912 article EN Issues in Mental Health Nursing 1988-01-01

Alzheimer's disease (AD) is a progressive dementing disorder characterized by age-related amyloid-beta (Aβ) deposition, neurofibrillary tangles, and synapse neuronal loss. It widely recognized that Aβ principal pathogenic mediator of AD. Our goal was to develop an immunotherapeutic approach, which would specifically lead the clearance and/or neutralization in triple transgenic mouse model (3xTg-AD). These mice amyloid tangle pathologies synaptic dysfunction reminiscent human Using...

10.1038/mt.2010.111 article EN cc-by-nc-nd Molecular Therapy 2010-06-15

A high performance 65 nm SOI CMOS technology is presented featuring 35 gate length, 1.05 oxide, enhancement from dual stress nitride liners (DSL), and 10 wiring levels with low-k dielectric offered in the first 8 levels. DSL shown to scale well larger seen than at 90 design rules. 0.65/spl mu/m/sup 2/ SRAM cell also presented. allows use Metal 1 instead of 2 for bit-line wiring, which lowers capacitance improves access times. functional dual-core microprocessor test chip containing 76Mb...

10.1109/.2005.1469238 article EN 2005-07-27

Five patients with relapsed PCNSL were given chemo-immunotherapy (rituximab followed by carboplatin and methotrexate) osmotic blood-brain barrier (BBB) opening. Four achieved CR one patient had stable disease. Two (2/5) durable responses (survival: 230+, 122+, 82, 42, 38 weeks). One later received Indium-111-ibritumomab tiuxetan Yttrium-90-ibritumomab intravenous, without BBB There was good uptake of Indium-111 ibritumomab in tumor on SPECT scan after 48 h. Estimated radiation doses to brain...

10.1080/10428190701493902 article EN Leukemia & lymphoma/Leukemia and lymphoma 2007-01-01

Effectively patterning the intended design on wafer for all possible geometries allowed by rule document is one of most critical challenges semiconductor manufacturing. Despite new lithography techniques like OPC, double and latest simulation methods, on-wafer evaluation using brightfield inspection SEM review tools, problems still occur can result in a major delay qualification technology or product. Of particular concern are shorts opens that cause product chip failure. Initial discovery...

10.1117/12.918072 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 2012-03-29

Mentoring is a positive method for promoting professional development; however, there little information in the literature addressing use of mentoring with baccalaureate nursing students. Because socialization critical component education, would be an optimal methodology. The authors describe how mentorship program combined role development course was integrated into BSN program. evolution faculty-student and presented.

10.1097/00006223-199711000-00013 article EN Nurse Educator 1997-11-01

Early detection of systematic patterning problems can provide a major boost for technology team. Often in the past, these type defects might only be detected after functional test and subsequent failure analysis. At this point, three to six months process development time have been lost defective hardware wasted. In paper, methodology in-line using E-beam hot spot inspection (EBHI) is introduced. Pattern simulation tools other sources are used recommend X, Y locations with challanging...

10.1109/asmc.2013.6552748 article EN 2013-05-01

This paper describes a 1.2V high performance 0.13 /spl mu/m generation SOI technology. Aggressive ground-rules and tungsten damascene local interconnect render the densest 6T SRAM reported to date with cell area of 2.16 mu/m/sup 2/. is accomplished 248nm lithography, using optical proximity correction resolution enhancement techniques on all critical levels. Interconnect requirements are achieved by up 8 levels Cu wiring an advanced low-k interlevel dielectric.

10.1109/vlsit.2000.852818 article EN 2002-11-07

Early detection of systematic patterning problems can provide a major boost for technology team. Often in the past, these type defects might only be detected after functional test and subsequent failure analysis. At this point, three to six months process development time have been lost defective hardware wasted. In paper, methodology in-line using E-beam hot spot inspection (EBHI) is introduced. Pattern simulation tools other sources are used recommend X, Y locations with challenging...

10.1109/tsm.2014.2358214 article EN IEEE Transactions on Semiconductor Manufacturing 2014-09-22

This new photoresist system extends the capability of ESCAP platform previously discussed. (1) resist material features a modified type 4-hydroxystyrene-t-butyl acrylate polymer which is capable annealing due to increased stability t-butyl ester blocking group. The based on this exhibits excellent delay and enhanced etch resistance versus previous DUV resists, APEX UV2HS. Improved stabilization chemically amplified images can be achieved through reduction film volume by densification. When...

10.1117/12.275830 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 1997-07-07

The herpes simplex virus (HSV)-based amplicon is a versatile vaccine platform that has been preclinically vetted as gene-based immunotherapeutic for cancer, HIV, and neurodegenerative disorders. Although it well known injection of dendritic cells (DCs) transduced ex vivo with helper virus-free HSV vectors expressing disease-relevant antigens induces antigen-specific immune responses, the cellular receptor(s) by which virion gains entry into DCs, effects viral vector transduction impinges on...

10.1089/hum.2008.160 article EN Human Gene Therapy 2009-02-07

For process development of deep-subwavelength technologies, it has become accepted practice to use model-based simulation predict systematic and parametric failures. Increasingly, these techniques are being used by designers ensure layout manufacturability, as an alternative to, or complement restrictive design rules. The benefit tools in the environment is that manufacturability problems addressed a design-aware way making appropriate trade-offs, e.g., between overall chip density...

10.1117/12.879537 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 2011-03-17

Optimization of semiconductor product yield requires control systematic defects. A variety industry tools are available to check designs for layouts that will be difficult manufacture. Because the cost associated with setting up rules a checking tool and licenses needed evaluate designs, manufacturing process lines typically enable limited set sensitivity. Semiconductor design systems incorporate library elements designed by third party companies. When suppliers do not have access or...

10.1109/asmc.2011.5898163 article EN 2011-05-01

Abstract In-line E-beam inspection may be used for rapid generation of failure analysis (FA) results low yielding test structures. This approach provides a number advantages: 1) It is much earlier than traditional FA, 2) de-processing isn’t required, and 3) high volume sites can processed with the additional support an in-line FIB. Both physical defect detection voltage contrast modes are useful this application. Voltage mode necessary isolation buried defects preferred opens, because it...

10.31399/asm.cp.istfa2013p0494 article EN Proceedings - International Symposium for Testing and Failure Analysis 2013-11-01

This paper describes the transformation of a group for isolated elderly from psychoeducational to socialization therapy. The international steps taken by authors as well crucial serendipitous contributions are identified. candidly describe their own ageist stereotypes and biases that at first limited expectations until challenged members.

10.1300/j009v18n02_06 article EN Social Work With Groups 1995-09-01

In this paper, we describe a high-performance 0.18 /spl mu/m logic technology with dual damascene copper metallization and dense SRAM memory. Local interconnect allows us to fabricate cells as small 3.84 mu/m/sup 2/. We demonstrate that continues exhibit performance advantages over aluminum-based technologies in generation.

10.1109/vlsit.1999.799362 article EN 2003-01-20
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