In this study, high-performance indium-gallium-zinc oxide thin-film transistors (IGZO TFTs) with a dual-gate (DG) structure were manufactured using plasma treatment and rapid thermal annealing (RTA). Atomic force microscopy measurements showed that the surface roughness decreased upon increasing O

In this work, we demonstrate sputtered amorphous indium–gallium–zinc oxide thin-film transistors (a-IGZO TFTs) with a record high effective field-effect mobility of 174 cm2/V s by incorporating silver nanowire (AgNW) arrays to channel electron transport. Compared the reference counterpart without nanowires, over 5-fold enhancement in exhibits clear dependence on orientation as well surface coverage ratio nanowires. Detailed material and device analyses reveal that during room-temperature...

This study developed flexible light-emitting diodes (LEDs) with warm white and neutral light. A simple ultraviolet flip-chip sticking process was adopted for the pumping source combined polymer quantum dot (QD) films technology to yield The polymer-blended LEDs exhibited higher luminous efficiency than QD-blended LEDs. Moreover, achieved excellent color-rendering index (CRI) values (Ra = 96 R9 96), high reliability, demonstrating suitability special applications like accent, down, or...

Metal nanowires (NWs) enable versatile applications in printed electronics and optoelectronics by serving as thin flexible transparent electrodes. The performance of metal NWs electrodes is highly correlated to the connectivity NW meshes. percolation threshold films corresponds minimum density form transparent, yet conductive networks. Here, we determine silver (AgNW) networks using morphological analysis terahertz (THz) reflection spectroscopy. From divergent behavior carrier scattering...

Abstract In this study, an Ar/O 2 plasma mixture treatment with different proportions of O was used to reduce the oxygen vacancy density in amorphous indium gallium zinc oxide (a-IGZO) thin film. The objective enhance field-effect carrier mobility a thin-film transistor (TFT) IGZO film as channel layer. Atomic force microscopy revealed that roughness after higher than untreated film; however, surface decreased proportion increased plasma. Hall measurement results showed resistivity...

Large-area graphene of high quality and uniformity was successfully grown by chemical vapor deposition (CVD) using surface oxidation treatment copper foil prior to the growth step. The transferred polyethylene terephthalate (PET) substrate (G/PET) act as a transparent front electrode hybrid heterojunction photovoltaic (PV) cells; these cells were based on structural motif poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) p-type semiconductor, GaAs (1 0 0) inorganic n-type...

Graphene layers were grown by chemical vapour deposition (CVD) on Si wafers covered a SiO2 substrate layer and Ni interlayer, copper nickel foil. The obtained graphene characterized Raman spectroscopy. films SiO2/Ni foil comprise mainly multilayer defect-rich graphene, while those Cu exhibit the spectroscopic fingerprint of relatively defect-free single-layer due to low carbon solubility in suitably chosen position quasiclosed volume. Optimal growth conditions nature defects are discussed.

This study uses radio-frequency sputtering methods to deposit lead titanate thin films with different contents of Ca on Pt∕Ti∕SiO2∕Si substrates form Pb1−xCaxTiO3 (PCT) films. The PCT contained amounts in order examine the influence content properties Analysis electrical revealed that their relative permittivities, dissipation factors, and pyroelectric coefficients tend increase content. On other hand, coercive field remnant polarization decreased an In addition, measured data indicated...

Hybrid Graphene/Si Schottky junction solar cells are inexpensive alternatives for photovoltaics due to easy and rapid fabrication processes. However, one of the main challenges graphene-based is large sheet resistance single-layer graphene, leading low fill factor. Here, we demonstrate multi-layer cell, which prepared by stacking monolayer graphene via a chemical vapor deposition (CVD) method on copper foils. The objectives improve charge transport decrease series hybrid cell. We present...

The development of solution-processed hybrid organic-inorganic heterojunction solar cells have provoked increasing research effort due to potential significantly reduce the fabrication cost semiconductor while maintaining high power conversion efficiency (PCE). With a recent record GaAs achieving 28.8% via wafer lift-off technique, organic/GaAs can offer an alternative route provide more affordable than current technologies. In this work, we demonstrate devices based on conductive polymer...

Silicon-based hybrid solar cells have garnered extensive attentions in the photovoltaics industry due to easy processing attributes and high optical absorption outstanding carrier mobility of silicon. Among all, indium tin oxide (ITO)/silicon achieved a power conversion efficiency 13% excellent conductivity, transmittance applicable surface potential ITO. However, cost ITO has risen significantly recently deficiency indium. Therefore, graphene been an inexpensive alternative For cell...

Nano-photonic concept has been shown to be very effective for boosting solar cell conversion efficiency. In this work, the novel concepts of non-reciprocality and chiral meta-surface are demonstrated useful photovoltaics. The asymmetric patterns designed optimized using genetic algorithm. enhanced optical absorption is observed it attributed non-reciprocal nature front meta-surface. surface enhances anti-reflection and, at same time, forbids photon escape once enters devices. This similar...

We demonstrate a graphene-based nematic liquid crystal cells fabricated by photo alignment technique. The modulation characteristics have been measured revealing that method shows great potential for protecting the graphene layer on glass substrate during LC device fabrication.

The pyroelectric infrared (PIR) sensor with a calcium-modified lead titanate Pb(subscript 1-x)Ca(subscript x)TiO3 thin film x=0.3 [PCT(30)] have been successfully fabricated. A RF planar magnetron sputter was used to deposit PCT(30) film. perovskite can be obtained. From the properties measurement we obtain remanent polarization Pr=25.3 μc/cm^2 and coercive electric field Ec=52.65 KV/cm. coefficient measured as function of temperature which 4.13×10^(-4)C/m^2 K at 300 degree C. For PIR...

In this work, highly transparent and conductive multi-wall-carbon nanotubes (MW-CNTs) are employed to realize solution-processed, hybrid silicon (Si) Schottky-junction solar cells. We first describe the optimization of device structures on wafers with nanowire micropyramidal surface textures, compare characteristics those cells based Si poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS). The optimized processing conditions include length nanowires, annealing temperature,...

Hybrid solar cells combining organic polymers and inorganic semiconductors are extensively investigated recently due to relatively inexpensive cost simple fabrication processes. In this work, we demonstrate organic/inorganic hybrid heterojunction based on gallium arsenide (GaAs) substrate conjugated polymer poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS). First performed a one-dimensional device simulation self-consistent Poisson drift-diffusion solver survey the band...

The material absorption can be enhanced by increased photonic density of state(PDOS). Here we demonstrate that through the design in Brillouin zone nanophotonic light trapping structures, PDOS effectively increased. theoretical work using rigorously coupled wave calculation shows spectral and optimal quasiguided mode excitations terms their quality factors number excited modes. experimental is currently ongoing preliminary result confirms short circuit current if properly adjusted. Unlike...

In this research, we reduced plasma damages on GaN-based high electron mobility transistors (HEMTs) by means of neutral beam (NB) etching. The which are induced during dry etching process one the causes decreasing device performances. NB is almost electrically uncharged and has few UV photons, thus it can reduce GaN surface. We applied to isolation process, measured leakage current under DC step-stress bias conditions, as well breakdown voltages two-terminal test element arrays. compared...

We study transient photoluminescence (PL) in In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.2</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.8</sub> N nano-disks (NDs) fabricated from a 2 or 3 nm-thick quantum well (QW) by damage-free neutral-beam etching utilizing bio-nano-engineered templates. A lateral averaged diameter of the ND was controlled to be 9 nm with high sheet-density up 2.6×10 <sup...