A5069318118- Photorefractive and Nonlinear Optics
- Photonic and Optical Devices
- GaN-based semiconductor devices and materials
- Photonic Crystals and Applications
- Semiconductor materials and devices
- ZnO doping and properties
- Advanced Optical Imaging Technologies
- Quantum Dots Synthesis And Properties
- Advanced Fiber Laser Technologies
- Liquid Crystal Research Advancements
- Semiconductor Lasers and Optical Devices
- Graphene research and applications
- Nanowire Synthesis and Applications
- Silicon Nanostructures and Photoluminescence
- History and advancements in chemistry
- Solid State Laser Technologies
- Thin-Film Transistor Technologies
- Optical Coatings and Gratings
- Advanced Fluorescence Microscopy Techniques
- Advanced Computing and Algorithms
- Photochromic and Fluorescence Chemistry
- Carbon Nanotubes in Composites
- Optical Network Technologies
- Innovation in Digital Healthcare Systems
- Nonlinear Optical Materials Studies
National Yang Ming Chiao Tung University
2008-2024
United Microelectronics (Taiwan)
2016
Arizona State University
1988
The enhanced light extraction and collimated output beam profile from GaN-InGaN vertical-injection light-emitting diodes (VI-LEDs) are demonstrated utilizing high-aspect-ratio nanorod arrays. arrays patterned by self-assembled silica spheres, followed inductively coupled-plasma reactive ion etching. fabricated not only provide an omnidirectional escaping zone for photons, but also serve as waveguiding channels the emitted light, resulting in a relatively profile. power of VI-LED with is 40%,...
A nonvolatile memory device embedded with Ge nanocrystal dots is fabricated by the thermal oxidation of combined a rapid annealing at 950°C in gas. The tunnel oxide controlled to be 4.5 nm thick and 5.5 nanocrystals. low operating voltage, 5 V, implemented significant threshold-voltage shift, 0.42 observed. When electrons are trapped nanocrystals, effect Coulomb blockade prevents injection storage more decreases leakage current. Also, retention characteristics tested robust. © 2003...
Enhanced light extraction and beam shaping of GaN-based vertical-injection light-emitting diodes (VI-LEDs) employing biomimetic surface structures were demonstrated. The fabricated using self-assembled polystyrene nanospheres serving as a monolayer mask, followed by anisotropic inductively coupled plasma reactive ion etching. output power the VI-LEDs with patterned exhibited an efficiency enhancement factor 68% at driving current 350 mA, compared to those without any structures. also...
A method for forming a current blocking layer (CBL) by ion implantation in GaN-based vertical-injection light-emitting diodes (VI-LEDs) was proposed. It found that the use of CBL VI-LEDs can effectively reduce crowding effect and enhance light output power. The uniform emission intensity distribution with demonstrated electroluminescence measurements. Experimental results show wall-plug efficiency enhanced 12.3% at an injection 20 mA, compared to without CBL, 56.2% conventional LEDs. device...
We report significant improvement of the TiSi / p-SiGe contact resistance by using a cryogenic (cold) boron implantation technique inside trench FinFET devices, providing both source dopants and localized amorphization source/drain, self-aligned on trench. A record low p-type resistivity 5.9×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−9</sup> ohm-cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> is demonstrated 7.5% performance...
Fluorescence blinking is commonly observed in single molecule/particle spectroscopy, but it an undesirable feature many applications. We demonstrated that CdSe/ZnS quantum dots agarose gel exhibited suppressed behavior. In addition, the long-time exponential bending tail of power-law statistics was found to be influenced by concentration. suggest electron transfer from light state dark might blocked due electrostatic surrounding with inherent negatively charged fibers.
In this study, p-i-n double-heterojunction GaN/ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.11</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.89</sub> N solar cells grown by metal-organic chemical vapor deposition on pattern sapphire substrate are presented. The cell with standard process has a conversion efficiency of 3.1%, which corresponds to fill factor 58%, short circuit current density 2.86 mA/cm <sup...
Graphene layers were grown by chemical vapour deposition (CVD) on Si wafers covered a SiO2 substrate layer and Ni interlayer, copper nickel foil. The obtained graphene characterized Raman spectroscopy. films SiO2/Ni foil comprise mainly multilayer defect-rich graphene, while those Cu exhibit the spectroscopic fingerprint of relatively defect-free single-layer due to low carbon solubility in suitably chosen position quasiclosed volume. Optimal growth conditions nature defects are discussed.
In this report, we investigated the pH dependence of photoluminescence CdSe/ZnS quantum dots (QDs). We present experimental results and theoretical analysis both blinking behavior single-QDs as well fluorescence intensity time trace from an ensemble QDs in agarose gel fibers at different environments. Such a combined approach confined by single-particle measurements has not been used previously. This study allows us to elucidate electron transfer processes light state dark state. The...
We demonstrate a graphene-based nematic liquid crystal cells fabricated by photo alignment technique. The modulation characteristics have been measured revealing that method shows great potential for protecting the graphene layer on glass substrate during LC device fabrication.
Thin (7 μm) layers of nanocomposites from graphene nanoflakes (GrFs) dispersed at concentrations 10−3 wt.% into the nematic liquid crystal (NLC) E7 were characterized by various investigation techniques, such as Raman spectroscopy, impedance measurements and dielectric well electro-optical (optical transmittance NLC versus voltage applied external AC electric field). Conducting behaviour, permittivity energy loss our planar-aligned room temperature analysed a function frequency in range 0.5...
A new neural network (NN) model is established for compensating effectively in real time the luminance degradation of organic light emitting diodes (OLEDs) a display operated an extensive period. The compensation achieved by three stages models. First, was orchestrated to estimate well temperature distribution OLED display. Second, new, incremental NN based on collected data degraded with ambient recorded. Third, another algorithm logic interpolation designed compensate real-time operation...
FinFET doping via implantation at room temperature could result in Fin damage within the body and degrade device performance. Heated techniques are developed to address detrimental effects on devices caused by damage. The wafer can be maintained specific platen while is progress. substrate affect implant cascade enhancing or retarding interstitial vacancy (IV) recombination process. In this paper, heated technique was applied IO LDD formation. Since operate relative high voltage electrical...
A read-only holographic memory for digital data storage is experimentally demonstrated. Techniques coding and decoding of optical signals, the interface techniques between a personal computer are described. The performance improving bit error rate (BER) presented.
Collective Thomson scattering has long been utilized to study electrostatic turbulence in magnetic confinement fusion plasmas with a view demonstrating causal link the observed anomolous transport of heat and particles. However, this goal severly hampered by relatively poor spatial resolution available at dominant wave numbers using standard experimental techniques. Good is necessary if adequate comparison theory experiment occur. The present paper describes basic principles new technique...