Yuanxun Liao

ORCID: 0000-0001-9427-0383
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Nanowire Synthesis and Applications
  • Silicon Nanostructures and Photoluminescence
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Optical Coatings and Gratings
  • Thin-Film Transistor Technologies
  • ZnO doping and properties
  • Semiconductor Quantum Structures and Devices
  • Metal and Thin Film Mechanics
  • Photonic Crystals and Applications
  • Anodic Oxide Films and Nanostructures
  • Surface Modification and Superhydrophobicity
  • Photonic and Optical Devices
  • solar cell performance optimization
  • Ga2O3 and related materials
  • Semiconductor materials and interfaces
  • TiO2 Photocatalysis and Solar Cells
  • Chalcogenide Semiconductor Thin Films
  • Phase-change materials and chalcogenides
  • 2D Materials and Applications
  • Electronic and Structural Properties of Oxides
  • Silicon and Solar Cell Technologies
  • Diamond and Carbon-based Materials Research
  • Gas Sensing Nanomaterials and Sensors
  • Perovskite Materials and Applications

Fuzhou University
2024

UNSW Sydney
2013-2019

University of Manchester
2018

ARC Centre of Excellence in Advanced Molecular Imaging
2013-2018

Institute of High Energy Physics
2011-2013

Chinese Academy of Sciences
2010-2013

Academia Sinica
2009-2011

InGaN-based light emitting diodes (LEDs) with a top nano-roughened p-GaN surface are fabricated using self-assembled CsCl nano-islands as etch masks. Following formation of hemispherical GaN nano-island arrays, electroluminescence (EL) spectra roughened LEDs display an obvious redshift due to partial compression release in quantum wells through Inductively Coupled Plasma (ICP) etching. At 350-mA current, the enhancement output power subjected ICP treatment durations 50, 150 and 250 sec...

10.1364/oe.19.001065 article EN cc-by Optics Express 2011-01-10

We introduce a method combining cesium chloride self-assembly and inductively coupled plasma to fabricate nanopillars with uniform coverage over an entire 4 inch prepatterned silicon wafer. This can produce pillars average diameters ranging from 50 nm 1.5 µm, aspect ratios up 13 above 35%. Cesium utilizes the deliquescence of salt, advantages excellent tunability, high ratio potential for micro/nano mixed structures, which makes this technology promising in areas MEMS, solar cells,...

10.1088/0957-4484/21/46/465302 article EN Nanotechnology 2010-10-25

We have investigated the ultrafast carrier dynamics in a 1 μm bulk In0.265Ga0.735N thin film grown using energetic neutral atom-beam lithography/epitaxy molecular beam epitaxy. Cathodoluminescence and X-ray diffraction experiments are used to observe existence of indium-rich domains sample. These give rise second population bi-exponential cooling is observed with characteristic lifetimes 1.6 14 ps at density 1.3 × 1016 cm−3. A combination band-filling, screening, hot-phonon effects gives...

10.1063/1.4945594 article EN Applied Physics Letters 2016-03-28

The hot carrier (HC) solar cell is one of the most promising advanced photovoltaic concepts. It aims to minimise two major losses in single junction cells due sub-band gap loss and thermalisation above band photons by using a small bandgap absorber, and, importantly, collecting photo-generated carriers before they thermalise. In this paper we will present recent development critical components HC cell, i.e., absorber energy selective contacts (ESCs). For fabrication cooling rates potential...

10.7567/jjap.56.08ma03 article EN Japanese Journal of Applied Physics 2017-07-10

Abstract Silicon nanopillars with average diameters from 200 to 900 nm and heights 0.5 3 μm have been successfully fabricated by cesium chloride (CsCl) self‐assembly lithography dry etching as antireflection layer for solar cells. The photovoltaic characteristics the structures of silicon researched show that reflectivity, conversion efficiency (PCE), external quantum (EQE) are greatly influenced diameter height nanopillars. small large can supress reflection, but less‐favorable photovoltic...

10.1002/ente.201200031 article EN Energy Technology 2013-01-29

Resonant tunneling through a 4 nm nanocrystal Ge (nc‐Ge) layer and 2.4 monolayer of Si colloidal quantum dots (QD) is achieved with 0.7 amorphous Al 2 O 3 (a‐Al ) barriers. The nc‐Ge resonant diode (RTD) demonstrates peak‐to‐valley current ratio (PVCR) 8 full width at half maximum (FWHM) 30 mV 300 K, the best performance among RTDs based on annealed nanocrystals. QD RTD first PVCRs up to 47 FWHMs as small 10 room temperature, confirming theoretically expected excellences 3D carrier...

10.1002/adfm.201605348 article EN Advanced Functional Materials 2017-03-31

Pyramids and nanoholes are integrated together to form a micro-nano-texture on silicon surface in order suppress reflection for solar cell application. The formed by inductively coupled plasma (ICP) dry etching employing nanoporous aluminum (Al) mask which is fabricated caesium chloride (CsCl) nanoislands lift-off technique. Reflection of less than 4% can be reached pyramid-nanohole texture, much lower that from pure pyramids or texture. Higher short circuit current density (J(sc))...

10.1088/0022-3727/46/37/375302 article EN Journal of Physics D Applied Physics 2013-08-28

a method combining Csesium Chloride (CsCl) self-assembly and inductively coupled plasma (ICP) etching has been used to fabricate nanopillars with high aspect ratio structures on sillicon wafer. The silicon surface of average diameter 350nm ratios 4, like black wafer, very low reflectivity at width light spectrum. After diffusion phosphorus (P) passivation SiO2 layer the pillars surface, reduced more below 3% for wavelength from 400nm 800nm, which could meet requirement antireflection solar...

10.4028/www.scientific.net/msf.694.375 article EN Materials science forum 2011-07-01

Though Ge crystallization has been widely studied, few works investigate metal-induced of ultrathin films. For 2 nm films in oxide matrix, becomes challenging due to easy oxidation and low mobility atoms. Introducing metal atoms may alleviate these problems, but the functions behaviours need be clarified. This paper investigates dynamics a multilayer structure 1.9 Ge/0.5 Al/1.5 Al2O3 under rapid thermal annealing (RTA). The atoms, like effective anti-oxidation, downshifting Raman peaks,...

10.1063/1.4937270 article EN Applied Physics Letters 2015-12-07

The light extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes (FS-FCLEDs) using two-step roughening methods is investigated. output power LEDs fabricated by one-step and are compared. results indicate that show more potential for extraction. Compared with flat FS-FCLEDs, the FS-FCLEDs a nanotextured hemisphere surface shows an 90.7%.

10.1088/1674-4926/34/11/114006 article EN Journal of Semiconductors 2013-11-01

A simple fabrication technology for both nanoscrews and nanoholes by Cesium Chloride (CsCI) self-assembly lithography dry etching on silicon substrates is demonstrated. The porous Al template ranging from 400 nm to 2 μm average diameter formed lift-off the CsCl nanoislands in DI water as ICP masks nanoholes. Nanoscrews of desired height/depth 1.2 4 are obtained this method. reflectance nanoscrew nanohole structures can achieve below 5% wavelength 1000 which much lower than that pyramid but...

10.1166/jnn.2015.7935 article EN Journal of Nanoscience and Nanotechnology 2014-09-22

The interfacial region between hetero‐epitaxial γ‐Al 2 O 3 and Si (111) substrates is studied in detail. purpose to address many open questions regarding the growth of grown on Si, such as atomic stacking orders, strain relaxation modes, observed thin‐film qualities. cross‐sectional order directly evidenced be a cubic spinel structure, with possible in‐plane proposed. A 1.5 nm defect‐rich transition layer found at interface, which lattice structure transitions from arrangement. quality,...

10.1002/admi.201700259 article EN Advanced Materials Interfaces 2017-07-13

This study investigates the ethanol gas-sensing mechanisms of ZnO nanocrystals with distinct morphologies, synthesized via a hydrothermal method using various alkali sources. Significant differences in performance and morphology samples ammonium carbonate (Na

10.3390/s24237623 article EN cc-by Sensors 2024-11-28

We use two-dimensional FDTD (Finite difference time domain) method to simulate light transmitting in Si nano-pillar arrays and get some results. The array, with diameters, heights, intervals respectively 50-80nm, less than 480nm, 26-44nm, is used as the testifying structure. reflectivities of both experiment simulation match well either for bulk silicon or structure even though small deviations are caused by uneven size pillar’s intervals. What’s more, we find reflectivity (ref) increases...

10.4028/www.scientific.net/amr.60-61.367 article EN Advanced materials research 2009-01-01

The hot carrier solar cell is one of the most promising advanced PV concepts with theoretical efficiency over 65% at sun. Two crucial components HC are: (i) Absorber which can sufficiently reduce rate cooling so that they be collected higher energies, and (ii) Energy selective contacts (ESCs) allow extraction carriers only through a narrow energy range. In this paper, potential HfN ZrN thin films as absorber has been investigated. Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/pvsc.2017.8366687 article EN 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) 2017-06-01
Coming Soon ...