L. V. Butov

ORCID: 0000-0001-9872-0417
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About
Contact & Profiles
Research Areas
  • Semiconductor Quantum Structures and Devices
  • Quantum and electron transport phenomena
  • Cold Atom Physics and Bose-Einstein Condensates
  • Strong Light-Matter Interactions
  • Molecular Junctions and Nanostructures
  • Spectroscopy and Quantum Chemical Studies
  • Physics of Superconductivity and Magnetism
  • 2D Materials and Applications
  • Quantum optics and atomic interactions
  • Semiconductor Lasers and Optical Devices
  • Photonic and Optical Devices
  • Perovskite Materials and Applications
  • Graphene research and applications
  • Quantum, superfluid, helium dynamics
  • Quantum Information and Cryptography
  • Photoreceptor and optogenetics research
  • Spectroscopy and Laser Applications
  • Atomic and Subatomic Physics Research
  • Quantum Dots Synthesis And Properties
  • Electronic and Structural Properties of Oxides
  • Neural Networks and Reservoir Computing
  • Mechanical and Optical Resonators
  • Advanced Semiconductor Detectors and Materials
  • Photonic Crystals and Applications
  • Advancements in Semiconductor Devices and Circuit Design

University of California, San Diego
2015-2024

Princeton University
2018

University of California, Santa Barbara
1997-2016

Cardiff University
2009-2016

Centre de Physique Théorique
2013

University of Southampton
2009

Osipyan Institute of Solid State Physics RAS
1994-2004

Lawrence Berkeley National Laboratory
2001-2004

Russian Academy of Sciences
1992-2003

University of California System
2001

Efficient signal communication uses photons. Signal processing, however, an optically inactive medium, electrons. Therefore, interconnection between electronic processing and optical is required at the integrated circuit level. We demonstrated control of exciton fluxes in excitonic circuit. The consists three optoelectronic transistors performs operations with fluxes, such as directional switching merging. Photons transform into excitons input, photons output. flux from input to output...

10.1126/science.1157845 article EN Science 2008-06-20

The photoluminescence of excitons confined in an electric field tunable coupled AlAs/GaAs quantum well has been investigated at $T\ensuremath{\ge}350$ mK and magnetic fields $H\ensuremath{\le}14$ T. In the indirect regime where electrons holes are separated both real $k$ space, was found to result (i) a strong change intensity decay time which is attributed anomalies exciton transport (ii) appearance huge broad band noise evidence for condensation.

10.1103/physrevlett.73.304 article EN Physical Review Letters 1994-07-11

We report about optical experiments on electric field tunable AlAs/GaAs coupled quantum well structures in the regime of induced \ensuremath{\Gamma}-X transition. Using energetically X-point state AlAs layer as an internal energy spectrometer and charge reservoir we are able to map out electronic states neighboring GaAs great detail. In spatially resolved bias voltage dependent photoluminescence find sets extremely narrow emission lines below fundamental band gap well. The new shown...

10.1103/physrevlett.72.3382 article EN Physical Review Letters 1994-05-23

We observe and analyze strongly nonlinear photoluminescence kinetics of indirect excitons in GaAs/AlGaAs coupled quantum wells at low bath temperatures, > or = 50 mK. The long recombination lifetime promotes accumulation these Bose particles the lowest energy states allows photoexcited to cool down temperatures where dilute 2D gas becomes statistically degenerate. Our main result--a strong enhancement exciton scattering rate low-energy with increasing concentration excitons--reveals bosonic...

10.1103/physrevlett.86.5608 article EN Physical Review Letters 2001-06-11

Indirect excitons (IXs) in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by a high binding energy making them stable at room temperature and giving the opportunity for exploring fundamental phenomena excitonic systems developing devices operational temperatures. We present observation of IXs TMD based on monolayers MoS$_2$ separated atomically thin hexagonal boron nitride. The realized heterostructure have lifetimes orders magnitude longer than direct...

10.1038/s41467-018-04293-7 article EN cc-by Nature Communications 2018-05-08

Condensation is observed in a gas of indirect excitons confined an electrostatic trap. Imaging and interferometric measurements detect that condense at the trap bottom exciton spontaneous coherence emerges with lowering temperature. Below temperature about 1 K, direct signature Bose–Einstein condensation, extension over entire cloud, observed.

10.1021/nl300983n article EN Nano Letters 2012-04-17

10.1016/j.spmi.2016.12.035 article EN publisher-specific-oa Superlattices and Microstructures 2017-01-18

Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and be effectively controlled by voltage light. IX Bose gases devices were explored GaAs where an range existence is limited to low temperatures due binding energies. IXs van der Waals transition-metal dichalcogenide (TMD) characterized large energies giving opportunity for exploring excitonic creating at high temperatures. TMD also offer a new platform studying...

10.1021/acs.nanolett.9b05086 article EN Nano Letters 2020-02-18

Due to the long lifetime of indirect (interwell) excitons, exciton condensation (analogous Bose-Einstein bosons) is expected occur in coupled quantum wells (CQW's). The critical conditions for have been predicted be strongly improved by high magnetic field perpendicular well plane. We present results experimental study transport and photoluminescence excitons AlAs/GaAs CQW's at low temperatures $(T>~350$ mK) fields $(B<~14$ T). Strong anomalies luminescence observed fields: a large increase...

10.1103/physrevb.58.1980 article EN Physical review. B, Condensed matter 1998-07-15

Bound electron?hole pairs?excitons?are light Bose particles with a mass comparable to or smaller than that of the free electron. Since quantum degeneracy temperature scales inversely mass, it is anticipated Bose?Einstein condensation an exciton gas can be achieved at temperatures about 1?K, orders magnitude larger micro-Kelvin employed in atomic condensation. High and possibility control density by laser photoexcitation make cold excitons model system for studies collective states many-body...

10.1088/0953-8984/16/50/r02 article EN Journal of Physics Condensed Matter 2004-12-07

The dependence of the intersubband absorption line shape on subband dispersion and Coulomb interaction between electrons is studied using Hartree-Fock semiconductor Bloch equations. For subbands with same effective masses, we show that absorption/emission solely determined by single-electron properties. very different results in a strong redistribution oscillator strength. this limit Fermi-edge collective mode induced repelling electron-hole pair.

10.1103/physrevlett.79.4633 article EN Physical Review Letters 1997-12-08

We present a theoretical and experimental investigation of the effects magnetic field on quasi-two-dimensional excitons. calculate internal structures dispersion relations spatially direct indirect excitons in single coupled quantum wells perpendicular to well plane. find sharp transition from hydrogenlike exciton magnetoexciton with increasing center-of-mass momentum at fixed weak field. At that mean electron-hole separation increases sharply becomes...

10.1103/physrevb.65.235304 article EN Physical review. B, Condensed matter 2002-05-24

The macroscopic rings observed in the photoluminescence patterns of excitons coupled quantum wells are explained by a mechanism carrier imbalance, transport, and recombination. originate from spatial separation $p$ $n$ carriers, occur at interface domains, where generated. We explore states ring over range temperatures down to $380\text{ }\mathrm{mK}$ report transition into periodic array aggregates, new low-temperature ordered exciton state.

10.1103/physrevlett.92.117404 article EN Physical Review Letters 2004-03-18

We demonstrate experimental proof of principle for an optoelectronic transistor based on the modulation exciton flux via gate voltage. The (EXOT) implements electronic operation photons by using excitons as intermediate media; intensity light emitted at optical output is proportional to input and controlled electronically gate. a contrast ratio 30 between state off EXOT its speeds greater than 1 GHz. Our studies also high-speed control both potential energy time scale much shorter lifetime.

10.1364/ol.32.002466 article EN Optics Letters 2007-08-16

We study transport of indirect excitons in $\mathrm{GaAs}/\mathrm{AlGaAs}$ coupled quantum wells linear lattices created by laterally modulated gate voltage. The localization-delocalization transition for across the lattice was observed with reducing amplitude or increasing exciton density. interaction energy at is close to amplitude. These results are consistent model, which attributes interaction-induced percolation gas through external potential. also discuss applications potentials...

10.1103/physrevlett.102.186803 article EN Physical Review Letters 2009-05-07

We report on the observation of a spin texture in cold exciton gas GaAs/AlGaAs coupled quantum well structure. The is observed around rings. phenomena include: ring linear polarization, vortex polarization with perpendicular to radial direction, an anisotropy flux, skew fluxes orthogonal circular polarizations and corresponding four-leaf pattern periodic texture, extended coherence region vortex. data indicate transport regime where locked direction particle propagation scattering suppressed.

10.1103/physrevlett.110.246403 article EN Physical Review Letters 2013-06-11

A Mach-Zehnder interferometer with spatial and spectral resolution was used to probe spontaneous coherence in cold exciton gases, which are implemented experimentally the ring of indirect excitons coupled quantum wells. strong enhancement length is observed at temperatures below a few Kelvin. The increase correlated macroscopic ordering excitons.

10.1103/physrevlett.97.187402 article EN Physical Review Letters 2006-10-31

Optical trapping and manipulation of neutral particles has led to a variety experiments from stretching DNA-molecules cooling atoms. An exciting recent outgrowth the technique is an experimental implementation atom Bose-Einstein condensation. In this paper, we propose demonstrate laser induced for new system--a gas excitons in quantum well structures. We report on highly degenerate Bose traps.

10.1103/physrevlett.96.227402 article EN Physical Review Letters 2006-06-08

We consider in-plane electrostatic traps for indirect excitons in coupled quantum wells, where the are formed by a laterally modulated gate voltage. An intrinsic obstacle exciton confinement is an electric field that can lead to dissociation. propose design suppress and, at same time, effectively confine traps. present calculations various classes of and experimental proof principle trapping

10.1063/1.2181276 article EN Journal of Applied Physics 2006-03-15
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