Research into the use of unstructured mesh methods in oceanography has been growing steadily over past decade. The advantages this approach for domain representation and non-uniform resolution are clear. However, a number issues remain, particular those related to computational cost models produced using compared with their structured counterparts. Mesh adaptivity represents an important means improve competitiveness models, where high is only used when necessary. In paper,...

Abstract Two‐dimensional layered transition metal dichalcogenides (TMDCs) are promising memristive materials for neuromorphic computing systems. Despite extensive experimental work, the underlying switching mechanisms still not understood, impeding progress in material and device functionality. This study reveals dominant role of defect dynamics process 2D TMDC materials. The is governed by formation annihilation a local vacancy depletion zone. It explains distinct features characteristics...

An 852/spl times/600/spl times/3-pixel, organic light-emitting diode (OLED)-on-silicon, color microdisplay utilizing a subthreshold-voltage-scaling method is presented. The pixel current modulated between 250 pA and 25 nA. With pitch of 5/spl times/15 /spl mu/m/sup 2/, the display contains 1.5 million individually addressable pixels sampling video signals at maximum rate 56.25 MHz, supports 15 modes, displays as many 16 colors. 16.28/spl times/14.2 mm/sup 2/ monolithic implemented in...

Abstract A novel proper orthogonal decomposition (POD) inverse model, developed for an adaptive mesh ocean model (the Imperial College Ocean Model, ICOM), is presented here. The new POD validated using the Munk gyre flow test case, where it inverts initial conditions. optimized velocity fields exhibit overall good agreement with those generated by full model. correlation between inverted and true 80–98% over majority of domain. Error estimation was used to judge quality reduced‐order models....

This Special Section on Strain Engineering in Semiconductor Materials guest-edited by Costanza Lucia Manganelli, Davide Spirito, Patricio Farrell, Jacopo Frigerio, Andrea De Iacovo, Damiano Marian, and Michele Virgilio highlights the potential of strain engineering diverse contexts, offering both practical methodologies profound theoretical insights. has become an essential strategy advancement semiconductor technologies, providing a powerful mean to modulate electronic, optical, mechanical...

We present a finite-strain model that is capable of describing the large deformations in bent nanowire heterostructures. The incorporates nonlinear strain formulation derived from first Piola-Kirchhoff stress tensor, coupled with an energy functional effectively captures lattice-mismatch-induced field. use finite element method to solve resulting partial differential equations and extract cross-sectional maps full tensor for both zincblende wurtzite nanowires lattice-mismatched core...

Abstract We extend the anisotropic Zienkiewicz–Zhu a posteriori error estimator of ( Proceedings ENUMATH‐2009 , Uppsala, Sweden, 29 June–3 July 2009) to three dimensions. Like standard estimator, proposed is designed be independent problem at hand, cheap compute and easy implement. In contrast elementwise counterpart explicitly takes into account geometrical properties actual tetrahedron. Thus, in wide variety applications, able detect features exhibited by solution governing equations. A...

In this paper, we discuss multiscale radial basis function collocation methods for solving elliptic partial differential equations on bounded domains. The approximate solution is constructed in a multilevel fashion, each level using compactly supported functions of smaller scale an increasingly fine mesh. On level, standard symmetric employed. A convergence theory given, which builds recent theoretical advances approximation functions. We are able to show that the linear number levels. also...

Random alloy fluctuations significantly affect the electronic, optical, and transport properties of (In,Ga)N-based optoelectronic devices. Transport calculations accounting for currently use a combination modified continuum-based models, which neglect to large extent atomistic effects. In this work, we present model that bridges gap between theory macroscopic models. To do so, combine tight-binding drift–diffusion solvers, where quantum corrections are included via localization landscape...

The non-destructive estimation of doping concentrations in semiconductor devices is paramount importance for many applications ranging from crystal growth to defect and inhomogeneity detection. A number technologies (such as LBIC, EBIC LPS) have been developed which allow the detection variations via photovoltaic effects. idea illuminate sample at several positions detect resulting voltage drop or current contacts. We model a general class such by ill-posed global local inverse problems...

Aluminum gallium nitride [(Al,Ga)N] has gained significant attention in recent years due to its potential for highly efficient light emitters operating the deep ultra-violet (UV) range (<280 nm). However, given that current devices exhibit extremely low efficiencies, understanding fundamental properties of (Al,Ga)N-based systems is key importance. Here, using a multi-scale simulation framework, we study impact alloy disorder on carrier transport, radiative and non-radiative...

Carrier localization effects in III-N heterostructures are often studied the frame of modified continuum-based models utilizing a single-band effective mass approximation. However, there exists no comparison between results continuum model and atomistic calculations on same underlying disordered energy landscape. We present theoretical framework that establishes connection tight-binding theory electronic structure models, here approximation, provide such for (In,Ga)N quantum wells. In our...

Understanding the impact of alloy micro-structure on carrier transport becomes important when designing III-nitride-based light emitting diode (LED) structures. In this work, we study fluctuations hole in (In,Ga)N single and multi-quantum well systems. To disentangle from electron recombination processes, focus our attention uni-polar (p-i-p) The calculations employ recently established multi-scale simulation framework that connects atomistic tight-binding theory with a macroscale...

Abstract In this paper, we consider a drift-diffusion charge transport model for perovskite solar cells, where electrons and holes may diffuse linearly (Boltzmann approximation) or nonlinearly (e.g., due to Fermi–Dirac statistics). To incorporate volume exclusion effects, rely on the integral of order $-1$ when modeling moving anionic vacancies within layer, which is sandwiched between electron hole layers. After nondimensionalization, first prove continuous entropy-dissipation inequality...