Abstract Two‐dimensional layered transition metal dichalcogenides (TMDCs) are promising memristive materials for neuromorphic computing systems. Despite extensive experimental work, the underlying switching mechanisms still not understood, impeding progress in material and device functionality. This study reveals dominant role of defect dynamics process 2D TMDC materials. The is governed by formation annihilation a local vacancy depletion zone. It explains distinct features characteristics...

Abstract In this paper, we consider a drift-diffusion charge transport model for perovskite solar cells, where electrons and holes may diffuse linearly (Boltzmann approximation) or nonlinearly (e.g., due to Fermi–Dirac statistics). To incorporate volume exclusion effects, rely on the integral of order $-1$ when modeling moving anionic vacancies within layer, which is sandwiched between electron hole layers. After nondimensionalization, first prove continuous entropy-dissipation inequality...

Abstract The van Roosbroeck system models current flows in (non-)degenerate semiconductor devices. Focusing on the stationary model, we compare excess chemical potential discretization scheme, a flux approximation which is based modification of drift term densities, with another state-of-the-art Scharfetter–Gummel namely diffusion-enhanced scheme. Physically, scheme can be interpreted as modifies thermal voltage. As reference solution consider an implicitly defined integral flux, using...

Two-dimensional (2D) layered transition metal dichalcogenides (TMDCs) are promising memristive materials for neuromorphic computing systems as they could solve the problem of excessively high energy consumption conventional von Neumann computer architectures. Despite extensive experimental work, underlying switching mechanisms still not understood, impeding progress in material and device functionality. This study reveals dominant role mobile defects dynamics 2D TMDC materials. The process...

Memristive Devices In article number 2300635, Benjamin Spetzler and co-workers introduce a dynamic charge transport model to investigate memristive switching mechanisms in two-dimensional transition metal dichalcogenides (TMDCs). The study highlights the central role of defect dynamics hysteresis pulse measurements, offering exciting insights for future advancements TMDC devices neuromorphic computing.

In this paper, we present the numerical analysis and simulations of a multi-dimensional memristive device model. Memristive devices memtransistors based on two-dimensional (2D) materials have demonstrated promising potential as components for next-generation artificial intelligence (AI) hardware information technology. Our charge transport model describes drift-diffusion electrons, holes, ionic defects self-consistently in an electric field. We incorporate two types boundary models: ohmic...

Due to its flexibility, perovskite materials are a promising candidate for many semiconductor devices. For example, Perovskite Solar Cells (PSCs) have become recently one of the fastest growing photovoltaic technologies [1]. In this work, we take volume exclusion effects into account by formulating two different current densities – either treating mobility or diffusion as density dependent while other quantity remains constant. Finally, compare both fluxes within drift-diffusion simulations...

Abstract Due to their flexible material properties, perovskite materials are a promising candidate for many semiconductor devices such as lasers, memristors, LEDs and solar cells. For example, perovskite-based cells have recently become one of the fastest growing photovoltaic technologies. Unfortunately, far from commercialization due challenges fast degradation. Mathematical models can be used tools explain behavior devices, example drift-diffusion equations portray ionic electric motion in...

We consider Voronoi finite volume schemes for the discretization of van Roosbroeck system and pay particular attention to choice flux approximations. The classical Scharfetter-Gummel scheme yields a thermodynamically consistent numerical flux, but cannot be used general charge carrier statistics. compare analyze aspects two state-of-the-art modified simulate (non-) degenerate semiconductors.

In this paper, we consider a drift-diffusion charge transport model for perovskite solar cells, where electrons and holes may diffuse linearly (Boltzmann approximation) or nonlinearly (e.g. due to Fermi-Dirac statistics). To incorporate volume exclusion effects, rely on the integral of order -1 when modeling moving anionic vacancies within layer which is sandwiched between electron hole layers. After non-dimensionalization, first prove continuous entropy-dissipation inequality model. Then,...