A5002735177- Luminescence Properties of Advanced Materials
- Semiconductor materials and devices
- ZnO doping and properties
- Silicon Nanostructures and Photoluminescence
- Glass properties and applications
- Thin-Film Transistor Technologies
- Gas Sensing Nanomaterials and Sensors
- Ga2O3 and related materials
- Electronic and Structural Properties of Oxides
- Physics of Superconductivity and Magnetism
- Perovskite Materials and Applications
- Quantum Dots Synthesis And Properties
- Catalytic Processes in Materials Science
- Lanthanide and Transition Metal Complexes
- Microwave Dielectric Ceramics Synthesis
- Nanowire Synthesis and Applications
- Radiation Detection and Scintillator Technologies
- Superconductivity in MgB2 and Alloys
- GaN-based semiconductor devices and materials
- Luminescence and Fluorescent Materials
- Copper Interconnects and Reliability
- Transition Metal Oxide Nanomaterials
- Semiconductor materials and interfaces
- Nuclear materials and radiation effects
- Copper-based nanomaterials and applications
Center for Research and Advanced Studies of the National Polytechnic Institute
2016-2025
Instituto Politécnico Nacional
2015-2024
Instituto de Estudios Avanzados
2001-2022
Universidad Politécnica de Zacatecas
2016
Universidad Autónoma del Estado de Hidalgo
2014
Universidad Autónoma Metropolitana
2010-2012
Centro de Investigación en Materiales Avanzados
1988-2003
Mexican Institute of Petroleum
1987-2002
Fraunhofer Institute for Nondestructive Testing
2001
University of Illinois Urbana-Champaign
2000
The room temperature, photoluminescent properties of manganese-doped zinc sulfide films deposited by spray pyrolysis are reported. These were on Pyrex glass substrates at atmospheric pressure using air as a carrier gas. All polycrystalline with wurtzite (hexagonal) structure. manganese doping was achieved mixing MnCl3 the starting solution to deposit ZnS. photoluminescence spectra measured temperature function different deposition parameters and Mn concentration. Besides characteristic light...
The electrical characteristics of off-stoichiometric silicon dioxide films have been investigated. oxide studied had an excess atomic (Si) content in the range 1%–6%. Raman spectroscopy and photoconductivity measurements indicate that Si is present as amorphous islands or small crystallites embedded (SiO2) forming a two-phase material. These differ structure from previously reported where dual dielectric layers stoichiometric SiO2 Si-rich with ≥13% were used. observed to produce electron...
Halide perovskites offer great promise for optoelectronic applications, but stability issues continue to hinder their implementation and long-term stability. The of all-inorganic halide the inherent quantum confinement low-dimensional can be harnessed synthesize materials with high PL efficiency. An example such is recently reported new family layered double perovskites, Cs4Cd1–xMnxBi2Cl12. Herein, we report a synthetic procedure that enhances maximum PLQY this up 79.5%, 20% enhancement from...
The optical and electrical characteristics of spray pyrolysis deposited aluminum oxide films are reported. were from a spraying solution acetylacetonate in N,N-dimethylformamide using an ultrasonic mist generator on (100) Si substrates. addition water during the deposition process resulted overall improvement characteristics. substrate temperature was 450–650 °C range. Deposition rates up to 90 Å/s obtained depending concentration with activation energy order 31 kJ/mol. band gap for these...
The luminescence and structural properties of layered Y2O3:Eu3+ phosphors, synthesized by a simple evaporation method followed thermal annealing at temperatures up to 1100 °C, are described for europium doping concentration 4.3 at. % as determined energy dispersive spectroscopy. intense emission spectra these samples associated with the characteristic intra-electronic levels Eu3+ ion transitions. dominant peak is 611 nm, corresponding 5D0 7F2 transition, excitation λexc = 245 nm. A...
Abstract CsPbX 3 (X = Cl, Br, I) perovskites have emerged as promising materials for optoelectronic applications. However, thin film synthesis has essential issues such chemical stability, toxicity, and processability. In this work, a green approach using water the only solvent to deposit CsPbCl :Yb 3+ films by aerosol assisted vapor deposition technique under ambient atmospheric conditions, is proposed. X‐ray diffraction pattern photoelectron spectroscopy analysis confirm phase purity...
We have reviewed the convenience and possibility of utilizing thallium-based superconductors for power applications. Some basic properties Tl-based systems such as crystal structure, phase stability, weak-links, pinning problems irreversibility lines are discussed first. Two approaches to conductor preparation then described, closed open one. Special attention is focused on fabrication Tl-1223 Tl-2223 superconductors. In case more successful approach a two-step technological procedure...
Nowadays, the antisolvent method is a novel technique used to finely adjust nucleation and growth of films. This known for its simplicity ease implementation. However, confirming that we have true antisolvent-driven process can sometimes be challenging. In this work, synthesized [MnxZn1–xCl4]ClCs3 antiperovskite films with AACVD technique, using only green antisolvents water as solvent. Our results show linear relationship between film rate dripping rate, in line modified Nyvlt theory...