A5031808189- Advancements in Photolithography Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Electron and X-Ray Spectroscopy Techniques
- Nanofabrication and Lithography Techniques
- Advanced X-ray Imaging Techniques
- Optical Coatings and Gratings
- Plasmonic and Surface Plasmon Research
- Advanced Surface Polishing Techniques
- Gold and Silver Nanoparticles Synthesis and Applications
- Advanced Electron Microscopy Techniques and Applications
- Semiconductor materials and devices
- Metamaterials and Metasurfaces Applications
- Microfluidic and Bio-sensing Technologies
- Near-Field Optical Microscopy
- Photonic and Optical Devices
- Photonic Crystals and Applications
- Microfluidic and Capillary Electrophoresis Applications
- Nanowire Synthesis and Applications
- Orbital Angular Momentum in Optics
- Force Microscopy Techniques and Applications
- Semiconductor Quantum Structures and Devices
- Atomic and Molecular Physics
- Silicon Nanostructures and Photoluminescence
- Nanopore and Nanochannel Transport Studies
- Biosensors and Analytical Detection
Paul Scherrer Institute
2016-2025
Amasya Üniversitesi
2023
Swiss Nanoscience Institute
2015-2021
Institute of Micro and Nanotechnology
2015-2020
Tokyo Electron (Japan)
2017
ETH Zurich
2007-2015
Vifor Pharma (Switzerland)
2015
École Polytechnique Fédérale de Lausanne
2007-2011
Prokhorov General Physics Institute
2008
Centre National de la Recherche Scientifique
2008
We report the ultrasensitive detection of adenine using deep-UV surface-enhanced resonance Raman scattering on aluminum nanostructures. Well-defined Al nanoparticle arrays fabricated over large areas extreme-UV interference lithography exhibited sharp and tunable plasmon resonances in UV wavelength ranges. Theoretical modeling based finite-difference time-domain method was used to understand near-field far-field optical properties arrays. measurements were performed molecules coated...
We numerically study the effect of structural asymmetry in a plasmonic metamaterial made from gold nanowires. It is reported that optically inactive (i.e., dark) particle plasmon modes symmetric wire lattice are immediately coupled to radiation field, when broken symmetry introduced. Such higher order resonances characterized by their subradiant nature. They generally reveal long lifetimes and distinct absorption losses. shown near-field interaction strongly determines these modes.
We report experimental and theoretical analysis of the plasmonic resonances Al nanoparticles nanorods. Ordered nanoparticle arrays with well-defined shapes narrow size distributions are fabricated on quartz substrates over large areas using extreme ultraviolet interference lithography. The structures, which have sizes down to 40 nm, exhibit strong sharp particle plasmon in near deep-UV ranges. A comprehensive carried out dipolar approximation finite-difference time-domain methods shows good...
We analyze the influence of near-field coupling on formation collective plasmon modes in a multilayer metallic nanowire array. It is shown that spectral interference between super- and subradiant normal results characteristic line shape modifications which are directly controlled by spacing as well alignment stacked lattice planes. Moreover, distinct near-field-induced reversal particle hybridization reported. Our numerical findings excellent agreement with experimental results.
Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route achieve exact positioning quantum dots dot arrays, molecules, crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at wavelength λ = 13.5 nm for fast, large-area exposure templates with perfect periodicity. Si(001) substrates have patterned two-dimensional...
Extreme ultraviolet (EUV) lithography is currently considered as the leading technology for high-volume manufacturing below sub-20 nm feature sizes. In parallel, EUV interference based on transmission gratings has emerged a powerful tool industrial and academic research. this paper, we demonstrate nanopatterning with sub-10 resolution using technique. Highly efficient optimized molybdenum result in resolved line/space patterns down to 8 half-pitch show modulation 6 half-pitch. These results...
We have fabricated, characterized and theoretically analyzed the performance of bilayer (or stacked) metallic wire-grids. The samples with 100 nm period were fabricated extreme-ultraviolet interference lithography. Transmission efficiency over 50% extinction ratios higher than 40 dB measured in visible range these devices. Simulations using a finite-difference time-domain algorithm are agreement experimental results show that transmission spectra governed by Fabry-Perot nearfield coupling...
Circularly polarized light is incident on a nanostructured chiral meta-surface. In the unit cells whose chirality matches that of light, superchiral forming and strong optical second harmonic generation can be observed. Due to favorable power-law scaling near-field enhancements, nonlinear properties plasmonic nano- metamaterials are prime fundamental practical interest. However, these remain largely unexplored. Here we demonstrate chiroptical effects sensitive enhancements therefore used...
Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning integrated circuits and reaching sub-10-nm resolution within next decade. Should photon-based still be used smaller feature sizes, beyond EUV (BEUV) 6.x wavelength an option that could potentially meet rigid demands of semiconductor industry. We demonstrate simultaneous characterization resolution, line-edge roughness, sensitivity distinct photoresists BEUV compare their properties when exposed to under...
Using extreme ultraviolet interference lithography, we demonstrate patterning of different inorganic photoresists, reaching the highest reported photolithography resolution 7 nm half-pitch.
Abstract Atomically precise hydrogen desorption lithography using scanning tunnelling microscopy (STM) has enabled the development of single-atom, quantum-electronic devices on a laboratory scale. Scaling up this technology to mass-produce these requires bridging gap between precision STM and processes used in next-generation semiconductor manufacturing. Here, we demonstrate ability remove from monohydride Si(001):H surface extreme ultraviolet (EUV) light. We quantify characteristics various...
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates reliable quantum computing technologies. The proposal to use nuclear electronic spins of donor atoms silicon, introduced by Kane 1998, sparked a new research field focused on the precise individual impurity devices, utilising scanning tunnelling microscopy ion implantation. This roadmap article reviews advancements 25 years since Kane's proposal,...
We present an experimental and theoretical study of plasmonic modes in high aspect ratio nanostructures the visible wavelength region demonstrate their performance for sensing applications. Ordered well-defined structures with various cross-sectional profiles heights are obtained using a top-down fabrication process. show that, compared to cylindrical nanorods, split-ring resonator-like cross sections have great potential powerful due pronounced polarization dependence, strong field...
Adhesion layers, required to stabilize metallic nanostructures, dramatically deteriorate the performances of plasmonic sensors, by severely damping plasmon modes. In this article, we show that these detrimental effects critically depend on overlap electromagnetic near-field resonant mode with adhesion layer and can be minimized careful engineering latter. We study dependence geometrical parameters such as thickness shape localized resonances for traditional layers Cr, Ti, TiO2. Our...
We report a high-throughput method for the fabrication of metallic nanogap arrays with high-accuracy over large areas. This method, based on shadow evaporation and interference lithography, achieves sub-10 nm gap sizes high accuracy ±1.5 nm. Controlled is demonstrated mm2 areas periods 250 Experiments complemented numerical simulations indicate that formation nanogaps robust, self-limiting process can be applied to wafer-scale substrates. Surface-enhanced Raman scattering (SERS) experiments...
Pairs of metal nanoparticles with a sub-10 nm gap are an efficient way to achieve extreme near-field enhancement for sensing applications. We demonstrate attractive alternative based on Fabry-Perot type nanogap resonators, where the resonance is defined by width and vertical elongation instead particle geometry. discuss crucial design parameters such plasmons produce maximum surface-enhanced Raman scattering show compatibility pattern processing low-cost low-resolution lithography. find...
The performance of EUV resists is one the main challenges for cost-effectiveness and introduction lithography into high-volume manufacturing. interference (EUV-IL) a simple powerful technique to print periodic nanostructures with resolution beyond capabilities other tools. In addition, well-defined pitch-independent aerial image EUV-IL provides further advantages analysis resist performance. this paper, we present evaluation chemically-amplified (CAR) inorganic using EUV-IL. We illustrate...
Abstract Understanding the chemistry of nanoparticles is crucial in many applications. Their synthesis a controlled manner and their characterization at single particle level essential to gain deeper insight into chemical mechanisms. In this work, nanoparticle spectro-microscopy with top-down nanofabrication demonstrated study individual iron nine different lateral dimensions from 80 nm down 6 nm. The particles are probed simultaneously, under same conditions, during in-situ redox reaction...
In this study, a series of molecular resists based on bis(4-butoxyphenyl) sulfone core attached to varying number radiation-sensitive triphenylsulfonium units (BPSSn, where n = 2, 3, and 4) were designed synthesized. We evaluated the physical properties these resists, including solubility, film-forming ability, thermal stability, assess their viability as photoresist materials. The materials allowed for negative patterning through organic development in both e-beam extreme ultraviolet (EUV)...
The dynamic absorption coefficients of several chemically amplified resists (CAR) and non-CAR extreme ultraviolet (EUV) photoresists are measured experimentally using a specifically developed setup in transmission mode at the x-ray interference lithography beamline Swiss Light Source. coefficient α Dill parameters ABC were with unprecedented accuracy. In general, match very closely theoretical value calculated from elemental densities coefficients, whereas exceptions observed. addition,...
Step-and-repeat EUV–ATL to obtain large-area nanoparticle arrays.