A5067830254- Advancements in Photolithography Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Electron and X-Ray Spectroscopy Techniques
- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Nanofabrication and Lithography Techniques
- Advanced Surface Polishing Techniques
- Optical Coatings and Gratings
- Semiconductor materials and devices
- Quantum Dots Synthesis And Properties
- Semiconductor materials and interfaces
- Advanced X-ray Imaging Techniques
- Surface Roughness and Optical Measurements
- Nonlinear Optical Materials Studies
- Advanced Thermoelectric Materials and Devices
- X-ray Spectroscopy and Fluorescence Analysis
- 3D IC and TSV technologies
- Industrial Vision Systems and Defect Detection
- Liquid Crystal Research Advancements
- Advanced Semiconductor Detectors and Materials
- Thermal properties of materials
- Silicon and Solar Cell Technologies
- Photonic and Optical Devices
- Advanced optical system design
- Silicon Nanostructures and Photoluminescence
Imec the Netherlands
2025
IMEC
2018-2024
KU Leuven
2020
Paul Scherrer Institute
2015-2020
Institute for Microelectronics and Microsystems
2018
International Society for Optics and Photonics
2016
STMicroelectronics (Italy)
2009
Arts et Métiers
2009
To achieve further miniaturization of semiconductor devices, extreme ultraviolet lithography is employed for patterning at the cutting-edge nodes. This technique necessitates use ultrathin resists (less than 50 nm thick) to maintain pattern stability and meet depth focus requirements. Typical cold plasmas used dry etching are rich in vacuum photons, which can cause unintended damage these resists. reduce etch budget complicate transfer. Thus, understanding impact plasma photons on be crucial...
The dynamic absorption coefficients of several chemically amplified resists (CAR) and non-CAR extreme ultraviolet (EUV) photoresists are measured experimentally using a specifically developed setup in transmission mode at the x-ray interference lithography beamline Swiss Light Source. coefficient α Dill parameters ABC were with unprecedented accuracy. In general, match very closely theoretical value calculated from elemental densities coefficients, whereas exceptions observed. addition,...
The amount of absorbed light in thin photoresist films is a key parameter photolithographic processing, but its experimental measurement not straightforward. optical absorption metal oxide-based for extreme ultraviolet (EUV) lithography was measured using an established methodology based on synchrotron light. Three types materials were investigated: tin cage molecules, zirconium oxoclusters, and hafnium oxoclusters. tin-containing compound demonstrated to have up three times higher than...
The thermal properties of the phase-change chalcogenide alloy Ge2Sb2Te5 in its three phases (amorphous, cubic, and hexagonal) Si3N4 SiO2 have been studied to obtain reliable values for device modeling. Thermal conductivity was determined, along with a quantitative estimation resistances layers' interfaces, not negligible highly scaled devices. Electrical resistivity material has also investigated during phase transition by situ measurement at constant heating rate.
Abstract The 3 ω method was employed to determine the effect of nitrogen doping (5 at.%) on thermal conductivity sputtered thin films stoichiometric GeTe (a material interest for phase change memories). It found that has a detrimental in both phases, but less markedly amorphous (–25%) than crystalline one (–40%). On opposite, no could be detected measured boundary resistance between these and SiO 2 , within experimental error. Our results agree with those obtained by molecular dynamic...
We have developed organometallic carboxylate compounds [RnM(O2CR′)2] capable of acting as negative-tone extreme ultraviolet (EUV) resists. The most sensitive these resists contain antimony, three R-groups and two groups, groups with polymerizable olefins (e.g., acrylate, methacrylate, or styrenecarboxylate). Evidence suggests that high sensitivity is achieved through the polymerization in exposed region. performed a systematic study molecules type RnM(O2CR′)2 where we studied seven R four...
The self-assembly of Ge1Sb2Te4 nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed Au nanoislands in a narrow range temperatures and deposition pressures. In the optimized conditions 400 °C, 50 mbar, NWs are single hexagonal crystals. Phase memory switching reversibly induced nanosecond current pulses through metal-contacted with threshold voltage about 1.35 V.
Polymeric refractive micro‐optical devices simultaneously demand striking smooth 3D topographies and precise shape accuracy for high performance low stray light. Here, a surface selective smoothening of thermoplastic, polymeric material has been established while maintaining the curvature corners required 50 µm tall, refractive, optical diffuser device. The master structures are fabricated using direct write laser‐lithography with two‐photon absorption. Master replicated into poly(methyl...
This study on the main chain scission type polymers, PMMA and a copolymer system, shows that EUV-printability is proportional to the<italic>M</italic><sub>w</sub>of starting material, which attributed enhanced litho-parameters of higher<italic>M</italic><sub>w</sub>material.
The blur caused by the nonzero mean free path of electrons in photoresists exposed extreme ultraviolet lithography has detrimental consequences on patterning resolution, but its effect is difficult to quantify experimentally. So far, most calculations use dielectric formalism, which an approximation valid optical limit and fails at low kinetic energy. In this work, we used a modified substrate-overlayer technique that exploited attenuation Si 2p core level originating specifically from...
The dynamic absorption coefficients of several CAR and non-CAR EUV photoresists are measured experimentally using a specifically developed setup in transmission mode at the XIL beamline Swiss Light Source. coefficient α Dill parameters ABC were with unprecedented accuracy. In general resists match very closely theoretical value calculated from elemental densities coefficients, whereas exceptions observed. addition, through direct measurements dose-to-clear values, we introduce new figure...
Pattern collapse and photoresist scumming are major limiting factors to achieve a failure-free process window in extreme ultraviolet lithography. Previous works on this topic have empirically proven the importance of matching underlayer surface energy, role played by developer liquid wet development. In work, we extend those concepts formulate figure merit for free energy at exposed unexposed photoresist-underlayer-developer interfaces. This provides tool optimize components that best match...
Abstract The underlying mechanism driving the structural amorphous-to-crystalline transition in Group VI chalcogenides is still a matter of debate even simplest GeTe system. We exploit extreme sensitivity 57 Fe emission Mössbauer spectroscopy, following dilute implantation Mn (T½ = 1.5 min) at ISOLDE/CERN, to study electronic charge distribution immediate vicinity probe substituting Ge (Fe ), and interrogate local environment over amorphous-crystalline phase thin films. Our results show that...
The c-axis thermal conductivity of a Sb2Te3 nanowire is measured using the scanning microscopy technique within 3ω mode. contact parameters, in terms boundary resistance and area radius, are specific configurations, values found assumed not to vary case. method does require handling or suspending nanowire. at room temperature be good agreement with that bulk, since characteristic dimension diffusion direction larger than phonon mean free path.
The experimental measurement of the time-dependent absorption photoresists at extreme ultraviolet wavelength is great interest for modeling lithographic process. So far, several technical challenges have made accurate determination linear coefficient and Dill parameters nontrivial. In this work, we use a dedicated equipment synchrotron light source to experimentally measure transmittance thin layers on transparent silicon nitride membranes, their thickness was measured with spectroscopic...
Owing to photon shot noise and inhomogeneous distribution of the molecular components in a chemically amplified resist, resist patterns defined by extreme ultraviolet (EUV) lithography tend suffer from stochastic variations. These variations are becoming more severe as critical dimensions continue scale down, can thus be expected major challenge for future use single exposure EUV lithography. Complementing with directed self-assembly (DSA) block-copolymers provides an interesting opportunity...