A5031486703- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Topological Materials and Phenomena
- Advanced Thermoelectric Materials and Devices
- Metal and Thin Film Mechanics
- Diamond and Carbon-based Materials Research
- Advanced Memory and Neural Computing
- 2D Materials and Applications
- Magnetic properties of thin films
- Advanced Semiconductor Detectors and Materials
- Quantum and electron transport phenomena
- Magnetic and transport properties of perovskites and related materials
- Quantum Dots Synthesis And Properties
- Advanced Condensed Matter Physics
- Advanced materials and composites
- Semiconductor materials and devices
- Transition Metal Oxide Nanomaterials
- Surface and Thin Film Phenomena
- Boron and Carbon Nanomaterials Research
- Conducting polymers and applications
- Thermal properties of materials
- Nanowire Synthesis and Applications
- Magnetic Field Sensors Techniques
- Nonlinear Optical Materials Studies
- Molecular Junctions and Nanostructures
Institute of Nanostructured Materials
2012-2025
Institute for Microelectronics and Microsystems
2015-2024
Institute of Structure of Matter
2012-2019
Universidad de Sevilla
2011-2016
Instituto de Ciencia de Materiales de Sevilla
2011-2016
National Research Council
2015
Marche Polytechnic University
2007-2011
STMicroelectronics (Italy)
2005-2009
Arts et Métiers
2009
Bristol Robotics Laboratory
2003
Memristors are one of the most promising candidates for future information and communications technology (ICT) architectures. Two experimental proofs concept presented based on intermixing spintronic memristive effects into a single device, magnetically enhanced memristor (MEM). By exploiting interaction between memristance giant magnetoresistance (GMR), universal implication (IMP) logic gate MEM device is realized.
AbstractThis article gives an overview of the different techniques used to identify, characterize, and quantify engineered nanoparticles (ENPs). The state-of-the-art field is summarized, characterization have been grouped according information they can provide. In addition, some selected applications are highlighted for each technique. classification has carried out main physical chemical properties such as morphology, size, polydispersity characteristics, structural information, elemental...
Abstract Spin‐charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in research effort toward development of fast ultra‐low power devices for future information communication technology. A large spin‐to‐charge (S2C) conversion efficiency Au/Co/Au/Sb 2 Te 3 /Si(111) heterostructures based on Sb TIs grown by metal–organic chemical vapor deposition 4″ Si(111) substrates is reported. By conducting room...
The thermal properties of the phase-change chalcogenide alloy Ge2Sb2Te5 in its three phases (amorphous, cubic, and hexagonal) Si3N4 SiO2 have been studied to obtain reliable values for device modeling. Thermal conductivity was determined, along with a quantitative estimation resistances layers' interfaces, not negligible highly scaled devices. Electrical resistivity material has also investigated during phase transition by situ measurement at constant heating rate.
We investigate spin precession (Hanle effect) in the prototypical organic spintronic giant magnetoresistance (GMR) device La0.7Sr0.3MnO3(LSMO)/tris(8-hydroxyquinoline)(Alq3)/AlOx/Co. The Hanle effect is not observed measurements taken by sweeping a magnetic field at different angles from plane of device. As possible explanations we discuss tilting out magnetization electrodes, exceptionally high mobility or hot spots. Our results call for greater understanding injection and transport such devices.
A novel functionalization of a ferromagnetic electrode employed in spintronic devices is reported. Self‐assembling monolayer technique has been used to chemisorb paramagnetic phosphonate functionalized nitronyl‐nitroxide radical (NitPO) on the La 0.7 Sr 0.3 MnO 3 (LSMO) manganite surface. This interfacial layer causes clearly detectable modifications behavior prototypical LSMO/NitPO/Gaq /AlO x /Co vertical at temperatures below alignment (estimated by density functional theory) magnetic...
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via torque (SOT) switching a magnetic electrode, driven by an applied charge current. In this work, we propose novel device based on semiconducting two-dimensional centrosymmetric transition metal dichalcogenide (TMD) MoS2, that operates as SOT writing process spin valve reading process. We demonstrate stable voltage states at room temperature can be...
<title>Abstract</title> Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via torque (SOT) switching a magnetic electrode, driven by an applied charge current. In this work, we propose novel device based on semiconducting two-dimensional centrosymmetric transition metal dichalcogenide (TMD) MoS<sub>2</sub>, that operates as SOT writing process spin valve reading process. We demonstrate stable voltage...
Vertical crossbar devices based on manganite and cobalt injecting electrodes a metal-quinoline molecular transport layer are known to manifest both magnetoresistance (MR) electrical bistability. The two effects strongly interwoven, inspiring new device applications such as control of the MR magnetic modulation To explain functionality, we identify mechanism responsible for switching by associating conductivity impedance behavior with chemical states buried layers obtained in operando...
Antimony telluride (Sb2Te3) thin films were prepared by a room temperature Metal-Organic Chemical Vapor Deposition (MOCVD) process using antimony chloride (SbCl3) and bis(trimethylsilyl)telluride (Te(SiMe3)2) as precursors. Pre-growth post-growth treatments found to be pivotal in favoring out-of-plane in-plane alignment of the crystallites composing films. A comprehensive suite characterization techniques used evaluate their composition, surface roughness, well assess morphology,...
The understanding of magnetoresistance (MR) in organic spin valves (OSVs) based on molecular semiconductors is still incomplete after its demonstration more than a decade ago. While carrier concentration may play an essential role transport these devices, direct experimental evidence importance lacking. We probed the charge by studying interplay between MR and multilevel resistive switching OSVs. present work demonstrates that all salient features particularly intimate correlation...
We report on the fabrication and electrical characterization of phase change memory (PCM) devices formed by In3Sb1Te2 chalcogenide nanowires (NWs), with diameters as small 20 nm. The NWs were self-assembled metal organic chemical vapor deposition via vapor–liquid–solid method, catalyzed Au nanoparticles. Reversible well reproducible switching between low high resistance states was demonstrated. conduction mechanism state investigated according to a trap-limited model for transport in...
Topological insulator (TI) properties of granular Sb 2 Te 3 thin films, grown by MOCVD at room temperature on 4″ SiO /Si substrates, are investigated. The negative magneto‐conductance (MC), analyzed in terms the Hikami–Larkin–Nagaoka theory, reveals presence a clear weak antilocalization (WAL) effect, thus demonstrating TI character our system. extracted WAL prefactor ( α ) values explained film conductance, agreement with existing models for transport disordered systems. dephasing length...
In this work, the self‐assembly of 3 Sb 1 Te 2 and In‐doped 4 nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, coupled with vapor–liquid–solid (VLS) mechanism, catalyzed Au nanoparticles. Single crystal NWs were obtained different reactor pressures at 325 °C. The parameters influencing NW studied compositional, morphological, structural analysis grown structures performed, also comparing effect used substrate (crystalline Si SiO...
Sb2 Te3 exhibits several technologically relevant properties, such as high thermoelectric efficiency, topological insulator character, and phase change memory behavior. Improved performances are observed novel effects predicted for this other chalcogenide alloys when synthetized in the form of high-aspect-ratio nanostructures. The ability to grow nanowires nanopillars (NPs) with crystal quality a controlled fashion, terms their size position, can boost realization thermoelectric, spintronic,...
The chalcogenide material Ge2Sb2Te5 is the prototype phase-change material, with widespread applications for optical media and random access memory. However, full set of its independent elastic properties has not yet been published. In this study, we determine constants rocksalt Ge2Sb2Te5, experimentally by X-ray diffraction (XRD) residual stress computationally density functional theory (DFT). stiffnesses (XRD-stress/DFT) in GPa are C11 = 41/58, C12 7/8, C44 8/12, Zener ratio 0.46/0.48....
Bi2Te3 is attracting a renewed interest due to its topological insulator properties; however, even using advanced physical and chemical deposition techniques, the growth of high crystal quality layers on substrates allowing technological employment, such as Si, very challenging structural complexity Bi2Te3. In this work, we present optimized large-area epitaxial unbuffered i-Si(111) via metal–organic vapor phase epitaxy (MOVPE), which crucial importance for future integration into...