A5100696758- Magnetic properties of thin films
- Ferroelectric and Negative Capacitance Devices
- Advanced Clustering Algorithms Research
- Image and Video Quality Assessment
- Advanced Memory and Neural Computing
- Optical measurement and interference techniques
- Optical Polarization and Ellipsometry
- Characterization and Applications of Magnetic Nanoparticles
- Autonomous Vehicle Technology and Safety
- Advanced Data Compression Techniques
- Digital Holography and Microscopy
- Advanced Neural Network Applications
- Quantum and electron transport phenomena
- Video Surveillance and Tracking Methods
Tohoku University
2019-2021
Complexe de Recherche Interprofessionnel en Aérothermochimie
2014
Centre National de la Recherche Scientifique
2014
For the first time, we demonstrated 55 nmCMOS/ spin-orbit-torque-device hybrid magnetic randomaccess memory (SOT-MRAM) cell with field free writing. writing, developed canted SOT device under 300 mm BEOL process full compatible 400°C thermal tolerance. Moreover, its advanced as follows; channel layer PVD for high spin Hall angle tolerance, low damage RIE technology of MTJ TMR/thermal stability factor (Δ) and ultra-smooth surface metal via to reduce contact resistance. By above technologies,...
We present the development of an original simulator to predict interferometric out-of-focus patterns created by irregular rough particles. Despite important simplifications scattering properties, this allows quantitative properties speckle-like patterns: i.e. dimension central peak 2D-autocorrelation pattern. This parameter can then be linked size and shape particle projected on CCD sensor, in cases where there is no exact theoretical formulation calculate scattered intensity. An...
The development of new functional memories using emerging nonvolatile devices has been widely investigated. Spin-transfer torque magnetoresistive random access memory (STT-MRAM) become technology platform to overcome the issue in power consumption logic for application from IoT AI; however, STT-MRAM a tradeoff relationship between endurance, retention, and time. This is because MTJ device used two-terminal device, excessive read current high-speed readout can cause unexpected data writing,...
We demonstrate an SOT-MRAM, a nonvolatile memory using spin-orbit-torque (SOT) devices that have read-disturbance-free characteristic. The SOT-MRAM fabricated by 55-nm CMOS process achieves 60-MHz write and 90-MHz read operations with 1.2-V supply voltage under magnetic-field-free condition. is also implemented in dual-port configuration utilizing three-terminal structure of the device, which realizes wide bandwidth applicable to high-speed applications.
Presently, many researchers and engineers have investigated autonomous driving, which has significantly influenced the revolution of artificial intelligence (AI). One critical challenges for driving is inadequate precision vehicles in detecting pedestrians, a major safety hazard to human beings. In this paper,a Field Programmable Gate Array (FPGA) demonstration system with normalization-based validity index (NbVI) been proposed real-time pedestrian detection. The algorithm can accurately...
Abstract This paper presents a novel cluster validity index (CVI) engine based on global separation and local dispersion (GSLD) used to improve the accuracy calculation efficiency of adaptive image clustering systems. The proposed GSLD can efficiently upon traditional speed by making full leverage temporary computation results obtained during process itself. CVI large-scale integrated (LSI) engine, designed with 55 nm CMOS technology, successfully achieves 200 MHz rate within 268 clocks...