A5041042989- Thin-Film Transistor Technologies
- Transition Metal Oxide Nanomaterials
- Advanced Machining and Optimization Techniques
- Advanced Surface Polishing Techniques
- Metal and Thin Film Mechanics
- Advanced machining processes and optimization
- Advanced Memory and Neural Computing
- CCD and CMOS Imaging Sensors
- GaN-based semiconductor devices and materials
- Acoustic Wave Resonator Technologies
- Semiconductor materials and devices
- ZnO doping and properties
- Mechanical and Thermal Properties Analysis
- Advanced Battery Materials and Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Nanostructures and Photoluminescence
- X-ray Diffraction in Crystallography
- Neuroscience and Neural Engineering
- Electrical Contact Performance and Analysis
- Electrostatic Discharge in Electronics
- Adhesion, Friction, and Surface Interactions
- Aluminum Alloys Composites Properties
- Engineering Diagnostics and Reliability
- Silicon and Solar Cell Technologies
- Ferroelectric and Negative Capacitance Devices
Nanyang Technological University
2007-2024
Lanzhou University
2024
IMS Nanofabrication (Austria)
2022
Peking University
2020
Guangdong University of Technology
2010-2011
Harbin Institute of Technology
2008
Surface modification of ZnO nanocombs was performed through a Ti plasma immersion ion implantation (PIII) with low bias voltages ranging from 0to5kV to quench surface-originated exciton emission. The energy dependent surface on investigated using transmission electron microscopy and temperature-dependent photoluminescence (PL). (SX) clearly identified for the as-grown sample at 4.5K, complete quenching observed treated 5kV PIII due state passivation. SX related states were located within 5nm...
A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and a high-κ (the dielectric constant is about 42.6) TaOx gate layer fabricated. The TFT shows robust anticlockwise hysteresis under DC voltage sweep synaptic behaviors (i.e., excitatory postsynaptic current, short-term memory plasticity, to long-term transition, potentiation depression) pulse stimulus. In addition, high responsivity illumination light with various wavelengths (ultraviolet visible light)....
We report a high-mobility transparent Indium-Gallium-Zinc-Oxide (IGZO) thin-film transistor (TFT) with sputtered AlO x passivation layer. The interfacial region between the IGZO layer and played crucial role in improving field-effect mobility (the maximum increased from 6.292 cm 2 Vs −1 for TFT without to 69.01 layer) on/off current ratio (from ∼10 7 8 layer). driving of was also significantly enhanced. formation has been investigated verified. ion bombardment during deposition broke In-O...
In this work, Al2O3 thin film containing Al nanocrystals (nc-Al) is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. Both electron and hole trapping in nc-Al are observed. The charge storage ability of the nc-Al/Al2O3 films provides possibility memory applications. Charging also leads change dc resistance films, namely, an increase resistance, whereas reduced if there nc-Al.
Enhancement in performance and reliability of transparent IGZO thin-film transistor (TFT) was achieved by adopting a laminated structure with thin ITO layer an ultrathin Ti as the source/drain (S/D) contacts. Compared TFT pure S/D contacts, ITO/Ti contacts showed three times enhancement field-effect mobility from 4.75 to 12.10 cm 2 /Vs, two on/off current ratio 7.0 × 10 7 1.54 8 , reduction contact resistance 15.74 4.64 kΩ, decrease threshold voltage 3.11 V 2.80 V. The also maintained...
In this work, we propose a novel active-matrix self-capacitance touch panel circuit. Each pixel contains only one thin film transistor. The principle of the event detection is to detect voltage change, which caused by change electrode capacitance. sensing capacitance sensor converted capacitive digital data compare with default value judge whether touched or not. simplest structure increase maximizes pad area and reduce parasitic effects. An array <inline-formula...
Resistance microwelding is an important microjoining process used in the fabrication of microelectronics, MEMS and medical devices. However, infeasible situation terminating insulated copper wire to metal sheet due hindrance insulation coating common opposed configuration. To address this problem, a revised electrode configuration used. The effect main parameters (welding current, weld time force) were investigated by detailed mechanical testing metallurgical examinations. A bonding...
The resistive switching variability and reliability degradation are the two major challenges that hinder high-volume production of Resistive Random Access Memory (RRAM) devices. In this work, a 3D electrode structure engineering method is proposed. geometric parameters defined as angle (EA), electrodes spacing (ES) trench depth (ETD) associated with double wedge-like filament-type RRAM devices studied for first time. Our experimental results show apart from uniformity, performance such...
In hybrid process of electrolytic magnetic abrasive finishing (EMAF), there are usually two structures on the tool design, separated or composited. This paper has been focused design composite tool. How to make electrolyte reach working area is a problem which should be solved for EMAF when used, therefore hollow structure pole put forward as one possible solution. To understand effects parameters brush EMAF, Finite Element Method (FEM) employed establish field model and analyze distribution...
A bi-directional silicon-controlled rectifier (Bi-SCR) electrostatic discharge (ESD) protection device consisting of a left SCR connected to the anode and right grounded cathode, which was developed for bipolar-CMOS–DMOS (BCD) technology, exhibited asymmetric early leakage failure in device, i.e., negative ESD stress caused an earlier as compared positive stress. The analysis current voltage waveforms transmission line pulse (TLP), technology computer-aided design (TCAD) simulations,...
This work aims at finding a HfO 2 -based resistive random-access memory (RRAM) structure suitable for the integration of one RRAM with InGaZnO thin film transistor (TFT) large-area applications such as flexible electronic circuits. One major concerns is that compliance current (CC) required formation stable and strong conductive filaments in forming set processes well maximum reset process large-size should be lower than TFT can deliver. In this work, an ultrathin Al O 3 layer nm was...
A micro Electrochemical Machining (ECM) system has been developed, and macro/micro complex feed mechanism presented in order to achieve high-resolution. nanosecond pulse power supply for micro-ECM the minimum width can reach 50 ns. Complementary chopper circuit designed avoid waveform distortion, which higher frequency. series of ECM experiments using machining have carried out, results tests proved that high-resolution spindle, high frequency, short help better quality surface, accuracy.
Since Particle Reinforced Metal Matrix Composites (PRMMC) normally applied Al2O3, SiC particle and other hard material as reinforce item, traditional manufacturing processes are to machine PRMMC with high efficiency low tool cost. This paper presents an electrochemical mechanical (ECMM) hybrid polishing procedure for PRMMC, the influences of parameters such work voltage, grinding area proportion, formula concentration electrolyte has been investigated. Through a compound no Z direction feed...
The amplitude transformer is one of the most important parts in ultrasonic work system. To transformer, resonant frequency and location flange are two crucial design objectives. For variable cross-section design, traditional theory calculation seems to be too verbose sometime hard get efficient solution. This paper focuses on using commercial FEM software-ANSYS achieve an optimal transformer.
Resistance microwelding of Au/Ni-plated phosphor bronze sheet to insulated Cu wire have been investigated using mechanical testing, optical microscopy, scanning electron and energy-dispersive X-ray spectroscopy. The results show that mechanisms joint formation involve solid-state bonding with Au atoms diffusion at low welding current, a combination brazing high current. Due the hindrance Ni plating which has higher melting temperature hardness, breaking force is smaller than without plating.
In order to resolve the problem of connecting rod notches machining, a new process WEDM (Wire Electric Discharge Machine) has been presented, and it is greatly possible that expensive laser can be replaced by in virtue its unique advantages. Firstly, parameters notch have analyzed, project machining using introduced, including measures achieve good-quality notch. The relationship between cutting speed power supply investigated, discovered micro-crackle on bottom are effect fracture splitting...
The differences between the Electrochemical Mechanical Machining (ECMM) progress of Particle Reinforced Metal Matrix Composites (PRMMC) and normal metal are behaviors non-conductive Particles. This paper employed Finite Element Method (FEM) to analyze electrochemical reaction around particle under different parameters. To seek applicable process, electric filed analysis in interelectrode gap ECMM process with embedded tools has been adopted. Experiments about work voltage, electrode formula...
Aluminum nitride (AlN) films have attractive physical properties, such as wide bandgap (6.2 eV), high thermal conductivity (320 W/mK), and good match of both expansion coefficient lattice constant to those Si substrate . Based on these AlN can be applied in surface acoustic wave (SAW) devices, memories optoelectronic devices. It has been reported our recent studies that amorphous thin containing aluminum nanocrystals (nc-Al) deposited by radio-frequency (rf) magnetron sputtering possess...