A5065708613- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Silicon and Solar Cell Technologies
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Surface and Thin Film Phenomena
- Ion-surface interactions and analysis
- Silicon Nanostructures and Photoluminescence
- Spectroscopy and Quantum Chemical Studies
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Chemical Physics Studies
- Photonic and Optical Devices
- Thin-Film Transistor Technologies
- Ferroelectric and Negative Capacitance Devices
- Metal and Thin Film Mechanics
Intel (United States)
2003-2008
University of Illinois Urbana-Champaign
1996-2001
Intel (United Kingdom)
2001
University of Illinois at Springfield
1997
A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm length, strained silicon, NiSi, seven layers of Cu interconnects, and low-/spl kappa/ CDO for high-performance dense logic is presented. Strained silicon used to increase saturated n-type p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive currents by 10% 25%, respectively. Using selective epitaxial Si/sub 1-x/Ge/sub x/ in the source drain regions, longitudinal uniaxial compressive stress introduced...
This paper describes the details of a novel strained transistor architecture which is incorporated into 90nm logic technology on 300mm wafers. The unique PMOS structure features an epitaxially grown SiGe film embedded in source drain regions. Dramatic performance enhancement relative to unstrained devices are reported. These transistors have gate length 45nm and 50nm for NMOS respectively, 1.2nm physical oxide Ni salicide. World record drive currents 700/spl mu/A//spl mu/m (high V/sub T/)...
Strained-silicon (Si) is incorporated into a leading edge 90-nm logic technology . Strained-Si increases saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive currents by 10 25%, respectively. The process flow consists of selective epitaxial Si/sub 1-x/Ge/sub x/ in the source/drain regions to create longitudinal uniaxial compressive strain MOSFET. A tensile Si nitride-capping layer used introduce MOSFET enhance electron mobility. Unlike past...
A leading edge 90 nm technology with 1.2 physical gate oxide, 50 length, strained silicon, NiSi, 7 layers of Cu interconnects, and low k carbon-doped oxide (CDO) for high performance dense logic is presented. Strained silicon used to increase saturated NMOS PMOS drive currents by 10-20% mobility >50%. Aggressive design rules unlanded contacts offer a 1.0 /spl mu/m/sup 2/ 6-T SRAM cell using 193 lithography.
Two key process features that are used to make 45 nm generation metal gate + high-k dielectric CMOS transistors highlighted in this paper. The first feature is the integration of stress-enhancement techniques with dual metal-gate transistors. second extension 193 dry lithography technology node pitches. Use these has enabled industry-leading transistor performance and high volume technology.
The two-dimensional (2D) to three-dimensional (3D) morphological transition in strained Ge layers grown on Si(001) is investigated using scanning tunneling microscopy. initial step takes place via the formation of 2D islands which evolve into small ( $\ensuremath{\simeq}180$ \AA{}) 3D with a height base diameter ratio $\ensuremath{\simeq}0.04$, much smaller than 0.1 aspect ${105}$-faceted pyramids had previously been assumed be islands. ``prepyramid'' have rounded bases steps oriented along...
B lattice positions are determined as a function of concentration ${C}_{\mathrm{B}}$ in ultrahighly doped Si(001):B layers grown by gas-source molecular beam epitaxy from ${\mathrm{B}}_{2}{\mathrm{H}}_{6}/{\mathrm{Si}}_{2}{\mathrm{H}}_{6}$. For ${C}_{\mathrm{B}}\ensuremath{\le}2.5\ifmmode\times\else\texttimes\fi{}{10}^{20}{\mathrm{cm}}^{\ensuremath{-}3}$, all atoms reside on tetrahedrally bonded electrically active substitutional Si sites. At higher ${C}_{\mathrm{B}}$, inactive is...
Si(001) layers doped with B concentrations ${C}_{\mathrm{B}}$ between $1\ifmmode\times\else\texttimes\fi{}{10}^{17}$ and $1.2\ifmmode\times\else\texttimes\fi{}{10}^{22}{\mathrm{cm}}^{\ensuremath{-}3}$ (24 at %) were grown on $\mathrm{Si}(001)2\ifmmode\times\else\texttimes\fi{}1$ temperatures ${T}_{s}=500--850\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ by gas-source molecular-beam epitaxy from ${\mathrm{Si}}_{2}{\mathrm{H}}_{6}$ ${\mathrm{B}}_{2}{\mathrm{H}}_{6}.$ increases linearly the...
Boron doping concentrations ≳6×1019 cm−3 were found to increase Si(001) growth rates RSi at low temperatures while decreasing higher during gas-source molecular beam epitaxy (GS-MBE) from Si2H6 and B2H6. In order probe the mechanisms governing these effects, samples with B coverages θB ranging <0.05 ≂0.5 ML prepared by exposing clean Si(001)2×1 wafers B2H6 doses between 2×1017 4×1020 cm−2 200–400 °C. The then heated 700 °C desorb hydrogen, cooled 200 °C, exposed atomic deuterium until...
B-doped Si(001) films, with concentrations CB up to 1.7×1022 cm−3, were grown by gas-source molecular-beam epitaxy from Si2H6 and B2H6 at Ts=500–800 °C. D2 temperature-programed desorption (TPD) spectra then used determine B coverages θB as a function of Ts. In these measurements, as-deposited films flash heated desorb surface hydrogen, cooled, exposed atomic deuterium until saturation coverage. Strong segregation was observed surface-to-bulk concentration ratios ranging 1200. TPD exhibited...
The effects of As doping, at concentrations CAs⩽4.8×1018 cm−3, on the growth kinetics Si(001):As layers deposited temperatures Ts=575–900 °C by gas-source molecular-beam epitaxy from Si2H6 and AsH3 have been investigated. With constant fluxes, film deposition rates RSi increase while CAs decreases with increasing Ts. All incorporated resides substitutional electrically active sites for up to 3.8×1018 cm−3 (Ts=800 °C), highest value yet reported hydride source gases. Immediately following or...
Single crystal Si1−xGex(011) layers with x⩽0.35 have been grown on double-domain Si(011)“16×2” surfaces from Si2H6/Ge2H6 mixtures at temperatures Ts=400–950 °C. D2 temperature programmed desorption was used to show that the structure of surface unit cell, more correctly written as [217 21] since cell vectors are nonorthogonal, is composed 16 adatoms and eight π-bonded dimers a dangling bond density half 1×1 surface. overlayers “16×2” when x<xc(Ts) “2×8” x>xc(Ts). The value xc...
Si 1−x Ge x (001) layers doped with B concentrations CB between 2×1016 and 2×1021 cm−3 were grown on Si(001)2×1 at Ts=500–700 °C by gas-source molecular-beam epitaxy (GS-MBE) from Si2H6, Ge2H6, B2H6. Secondary-ion mass spectrometry measurements of modulation-doped structures demonstrate that doping has no effect the incorporation probability. Steady-state surface coverages (θB θGe) determined as a function using in situ isotopically tagged temperature-programmed desorption. Results for...
Arsenic-doped Si(001) layers with concentrations CAs up to 5×1018 cm−3 were grown on Si(001)2×1 at temperatures Ts=575–900 °C by gas-source molecular-beam epitaxy (GS-MBE) using Si2H6 and AsH3. This is almost an order of magnitude higher than the initially reported “maximum attainable” saturated value for GS-MBE from hydride precursors. At constant JAsH3/JSi2H6, decreases, while film growth rate RSi increases, Ts. Temperature programmed desorption measurements show that As segregates...
Arsenic doping at concentrations CAs ⪞1018 cm−3 during Si(001) growth from hydride precursors gives rise to strong As surface segregation, low film rates RSi, poor electrical activation, and roughening. Based upon the results of temperature-programmed desorption studies Si(001):As processes deposition, we have investigated use temperature-modulated including periodic arsenic (10 s 1000 °C) segregated layer. Both constant-temperature layers were grown Ts=750 °C, selected as a compromise...