Thomas Hoffmann

ORCID: 0000-0002-3181-9962
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About
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Research Areas
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Integrated Circuits and Semiconductor Failure Analysis
  • Silicon and Solar Cell Technologies
  • Advancements in Photolithography Techniques
  • Semiconductor materials and interfaces
  • Ferroelectric and Negative Capacitance Devices
  • Scheduling and Optimization Algorithms
  • Nanowire Synthesis and Applications
  • Advanced Surface Polishing Techniques
  • Nanofabrication and Lithography Techniques
  • Agricultural Engineering and Mechanization
  • Assembly Line Balancing Optimization
  • Force Microscopy Techniques and Applications
  • Forest Biomass Utilization and Management
  • Bioenergy crop production and management
  • Potato Plant Research
  • Bladed Disk Vibration Dynamics
  • Crop Yield and Soil Fertility
  • Thermochemical Biomass Conversion Processes
  • Granular flow and fluidized beds
  • Mineral Processing and Grinding
  • Soil Mechanics and Vehicle Dynamics
  • Microfluidic and Capillary Electrophoresis Applications
  • Advanced Manufacturing and Logistics Optimization

Leibniz Institute for Agricultural Engineering and Bioeconomy
2013-2024

Leibniz University Hannover
2017-2023

Clinical Research Consulting
2017

Leibniz Association
2010-2015

Knowles (United States)
2012

IMEC
2001-2011

Leibniz Institute for Neurobiology
2011

KU Leuven
2003-2011

RWTH Aachen University
2008-2010

Applied Materials (United States)
2008-2009

This paper describes the details of a novel strained transistor architecture which is incorporated into 90nm logic technology on 300mm wafers. The unique PMOS structure features an epitaxially grown SiGe film embedded in source drain regions. Dramatic performance enhancement relative to unstrained devices are reported. These transistors have gate length 45nm and 50nm for NMOS respectively, 1.2nm physical oxide Ni salicide. World record drive currents 700/spl mu/A//spl mu/m (high V/sub T/)...

10.1109/iedm.2003.1269442 article EN 2004-03-22

A leading edge 90 nm technology with 1.2 physical gate oxide, 50 length, strained silicon, NiSi, 7 layers of Cu interconnects, and low k carbon-doped oxide (CDO) for high performance dense logic is presented. Strained silicon used to increase saturated NMOS PMOS drive currents by 10-20% mobility >50%. Aggressive design rules unlanded contacts offer a 1.0 /spl mu/m/sup 2/ 6-T SRAM cell using 193 lithography.

10.1109/iedm.2002.1175779 article EN 2003-06-25

We review the salient aspects of nanoimprint lithography and consider challenges it faces in becoming a standard fabrication technique, such as costs throughput. discuss material issues visco-elasticity functionality printed material. By way an illustration, we present printing results 50 nm features over 2×2 cm2 area which are reproducible with high fidelity. Data 15 PMMA using Cr stamp was obtained.

10.1088/0957-4484/12/2/303 article EN Nanotechnology 2001-05-25

Assembly line balancing consists of assigning work elements, which are subject to sequencing restrictions, along an assembly in optimal manner. The procedure presented this paper leads balances by operation on a matrix zeros and ones called “Precedence Matrix.” A nine element problem is used illustrate the method detail comparisons with other procedures made. Several obtained applying FORTRAN program appended actual sample problems also shown.

10.1287/mnsc.9.4.551 article EN Management Science 1963-07-01

In view of the difficulties in planar CMOS transistor scaling to preserve an acceptable gate channel control FINFET based multi-gate (MuGFET) devices have been proposed as a technology option for replacing existing technology. The attractiveness consists realization self-aligned double-gate with conventional process. This allows extending beyond transitor limits, maintaining steep subthreshold slope, better performance bias voltage and good matching due low doping concentration channel....

10.1109/soi.2009.5318794 article EN 2009-10-01

Hydrothermal carbonization (HTC) solid and liquid products may inhibit seed germination, necessitating post-treatment. The hydrothermal humification (HTH) method addresses this drawback by transforming inhibitory compounds, such as aromatics, into artificial humic acids (AHAs) fulvic (AFAs). This study introduces a novel approach investigating the substitution of commonly used alkaline agent in HTH, KOH, with hydrated lime to develop cost-effective fertilizers from sugar beet pulp, enriching...

10.18331/brj2024.11.1.4 article EN cc-by Biofuel Research Journal 2024-03-01

We have tested nanoimprint lithography, a new and promising technique for nanometer-scale pattern definition. Preliminary experiments reveal that, besides severe sticking adhesion problems, the problem of material transport is one inherent to this technique. There are clear indications that most effects found may be understood in terms transport. performed within well defined pressure temperature window which ranged from 60 100 bar 50 90 °C above glass transition...

10.1116/1.590436 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 1998-11-01

Numerous methods have been proposed for solution of the simple assembly line balancing (SALB) problem. This paper describes a branch and bound algorithm which in many cases is faster than well-known Hoffmann heuristic technique to it related. It introduces bounding rule uses concept “theoretical” minimum slack time achieve rapid solutions. combined with develop an even more effective system solving SALB problems. Timing results are given standard set problems found literature. Since that was...

10.1287/mnsc.38.1.39 article EN Management Science 1992-01-01

We describe the device physics of uniaxial strained silicon transistors. Uniaxial strain is more effective, less costly and easier to implement. The highest PMOS drive current date reported: 0.72mA/ /spl mu/m. Pattern sensitivity mobility/Rext partitioning are discussed. Finally we measure inverter delays as low 4.6pS, show 50Mb SRAMs operational at 0.65V.

10.1109/vlsit.2004.1345387 article EN 2004-01-01

A commercial technology computer-aided design device simulator was extended to allow electrical simulations of sub-100-nm germanium pMOSFETs. Parameters for generation/recombination mechanisms (Shockley-Read-Hall, trap-assisted tunneling, and band-to-band tunneling) mobility models (impurity scattering reduction at high lateral transversal field) are provided. The were found correspond well with the experimental I- V data on our Ge transistors gate lengths down 70 nm various bias conditions....

10.1109/ted.2010.2060726 article EN IEEE Transactions on Electron Devices 2010-08-18

Grasslands play a crucial role in European agriculture and ecology, but are often underutilized due to low-value end-products. The utilisation of late-harvest grass for biochar heat generation on farm-level is being studied as potential negative emissions technology. Technical (energy provision carbon sink), economic (cost vs. benefit), political (regulatory framework) social (SWOT) perspectives evaluated. feasibility has been demonstrated with three different farm-scale technologies the...

10.1016/j.spc.2023.02.019 article EN cc-by-nc-nd Sustainable Production and Consumption 2023-03-08

Abstract Hydrothermal carbonization (HTC) converts wet biomass into hydrochar and a process liquid, but aromatic compounds in the products have been reported as roadblock for soil applications they can inhibit germination, plant growth, microbial activity. Here, we compared HTC hydrothermal humification (HTH) of cow manure digestate while varying initial alkaline content by adding KOH. HTH converted 37.5 wt% feedstock to artificial humic acids (A-HAs) found both solid twice that HTC. reduced...

10.1007/s42773-024-00334-1 article EN cc-by Biochar 2024-05-09

A novel approach is presented for non-constrictive long-term-monitoring of respiration which could particularly become suitable home care applications. The system based on textile integrated force sensors detect expansion the thorax during and allow wireless data transmission maximum mobility. Possible applications include long-term monitoring patients with chronic pulmonary diseases, early recognition diseases performance measurement athletes exercise. Results from tests under various...

10.1109/jsen.2010.2082524 article EN IEEE Sensors Journal 2010-10-01

To address the integration of high-mobility Ge/III-V MOSFET, a common gate stack (CGS) solution is proposed for first time and demonstrated on Ge InGaAs channels with combined hole electron field-effect mobility values up to 400 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /eV-s 1300 /eV-s. Based duality found InGaAs/Ge MOS system, this approach aims integrate MOSFET processes high performance CMOS applications an emphasis...

10.1109/iedm.2009.5424359 article EN 2021 IEEE International Electron Devices Meeting (IEDM) 2009-12-01

We have investigated new aromatic polymers for nanoimprint and subsequent dry etching, namely thermoset thermoplastic compounds. They were tested in a SiO2 patterning process under low pressure high plasma density conditions feature selectivity about twice as poly(methylmethacrylate) (PMMA). The imprint behavior is comparable to PMMA and, particular, the show excellent quality. This was demonstrated by replication of large arrays lines down 50 nm width. showed etch stability Teflon-like...

10.1116/1.1305331 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 2000-07-01

Abstract The use of Salvinia minima Baker for the removal lead (Pb) and arsenic (As) from aqueous solutions was investigated. In a first approach, effect different concentrations AsO 4 3– Pb(II) on growth accumulation these metals studied. plants tolerated 20–40 μM 200 . Toxic effects occurred when 20 100 were used. These included inhibition (decreased yield biomass frond area) as well an altered (leaf‐like structure in ferns) appearance tissue consistence. S. showed high uptake Pb (34 mg/g...

10.1002/elsc.200400008 article EN Engineering in Life Sciences 2004-02-05

In Germanium-based metal-oxide-semiconductor field-effect transistors, a high-quality interfacial layer prior to high-¿ deposition is required achieve low interface state densities and prevent Fermi level pinning. this letter, the physical electrical properties of Ge/GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Al O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> gate stack are investigated. The GeO interlayer grown by radical...

10.1109/led.2010.2044011 article EN IEEE Electron Device Letters 2010-03-30

&lt;p&gt;&lt;strong&gt;Background: &lt;/strong&gt;Metals can be found in nature, but they are also generated by anthropogenic activities associated with technological waste, such as batteries and electronic components. These metals, when released to the environment may contaminate cause significant health damage. Phytoremediation is a process de-contaminate water bodies from metals using plants. Obviously, those plants should able not only uptake high amounts of also, tolerate concentrations...

10.56369/tsaes.5346 article EN cc-by Tropical and Subtropical Agroecosystems 2025-02-12
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