A5002801027- Particle Detector Development and Performance
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Semiconductor Detectors and Materials
- Integrated Circuits and Semiconductor Failure Analysis
- Nuclear Physics and Applications
- Silicon Carbide Semiconductor Technologies
- Nuclear physics research studies
- Radiation Detection and Scintillator Technologies
- Quantum Chromodynamics and Particle Interactions
- CCD and CMOS Imaging Sensors
- Crystallography and Radiation Phenomena
- Diamond and Carbon-based Materials Research
- Neutrino Physics Research
- Superconducting Materials and Applications
- Atomic and Subatomic Physics Research
- Ion-surface interactions and analysis
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- X-ray Spectroscopy and Fluorescence Analysis
- Radiation Effects in Electronics
Ioffe Institute
2012-2023
Physico-Technical Institute
2015
Saint Petersburg State Electrotechnical University
2013
Russian Academy of Sciences
2011-2012
As a result of the foreseen increase in luminosity Large Hadron Collider, discrimination between collision products and possible magnet quench-provoking beam losses primary proton beams is becoming more critical for safe accelerator operation. We report results ongoing research efforts targeting upgrading monitoring system by exploiting Beam Loss Monitor detectors based on semiconductors located as close to superconducting coils triplet magnets. In practice, this means that will have be...
The NUSTAR experiments to be carried out as the part of FAIR program (Facility for Antiproton and Ion Research) now under development in GSI, Germany, require unique spectrometers heavy ions, an energy range between a hundred keV up hundreds MeV. These are constructed on basis silicon double sided detectors capable providing simultaneously spectrum particles position hit points. Si strip high resolution ion spectroscopy tracking were developed by PTI-RIMST consortium. Reduced sized studied...
The results of this study throw a new light on the impact active base with low electric field bulk current in Si detectors exploited experiments at High-Luminosity Large Hadron Collider (HL-LHC) CERN fluences beyond 1× 1015 neq/cm2. profiles field, E(x), and densities p+-n-n+ were simulated for up to 5× 1016 cm−2. E(x) showed double-peak shape between which acts as electrically neutral conductive or depleted region changing its type versus bias voltage irradiation fluence. A comparison...
This study focuses on evaluating the properties of voltage termination structure (VTS) with multiple guard rings in n+-p-p+ silicon detectors Al2O3 field isolation films processed by Atomic Layer Deposition (ALD) method. The dependences ring potential over respect to bias were studied experimentally and compared results simulations using negative charge Qf as a parameter. agreement experimental calculated punch-through voltages switching operation verified that model built for p+-n-n+...
Semiconductor radiation detectors are widely applied in high energy physics experiments. The largest particle colliders use silicon with the total area of hundreds square meters that enhances requirement to their stable long-term operation. This is provided by incorporating floating p+ rings surrounding sensitive p+-n-n+ (VTS – Voltage Termination Structure), prevents an electric breakdown. physical model VTS operation high-resistivity developed study uses approach current injection through...
Radiation degradation of Si ion detectors becomes critical for the experiments at new facilities giving beam intensity increase up to 10 5 times. The study is focused on impact heavily damaged Bragg peak region (BPR) range end bulk current sensors irradiated with 53.4 MeV 40 Ar ions in fluence (1-4)·10^9 ion/cm 2 . It shown that taking into account only generation component insufficient explain experimental I-V curves. Simulating characteristics and electric field profiles demonstrated...
Abstract The presented paper is focused around radiation damage of silicon material under the different ions irradiation. ion total energy range 0.7 GeV for 7 Li to 208 Pb. results TRIM modeling set six are presented. extracted information about vacancy production allows making first assumptions Si degradation dependence on mass and incident ion.