A5061462367- 2D Materials and Applications
- ZnO doping and properties
- Ga2O3 and related materials
- Chalcogenide Semiconductor Thin Films
- Perovskite Materials and Applications
- Plasmonic and Surface Plasmon Research
- Graphene research and applications
- MXene and MAX Phase Materials
- Surface Roughness and Optical Measurements
- Multiferroics and related materials
- Optical Coatings and Gratings
- Advanced Surface Polishing Techniques
- Metamaterials and Metasurfaces Applications
- Gas Sensing Nanomaterials and Sensors
- Advanced Fiber Laser Technologies
- Advanced Memory and Neural Computing
- Copper-based nanomaterials and applications
- Topological Materials and Phenomena
- Quantum Dots Synthesis And Properties
- Advanced Photocatalysis Techniques
- Molecular Junctions and Nanostructures
Fudan University
2020-2024
Changchun Institute of Optics, Fine Mechanics and Physics
2022
Chinese Academy of Sciences
2022
Recently, various transition metal dichalcogenides (TMDs)/Ga2O3 heterostructures have emerged as excellent candidates for the development of broadband photodetection, exhibiting merits such optical absorption, efficient interlayer carrier transfer, a relatively simple fabrication process, and potential flexibility. In this work, vertically stacked MoSe2/Ga2O3, WS2/Ga2O3, WSe2/Ga2O3 were experimentally synthesized, all light spanning at least from 200 to 800 nm. The absorption coefficients...
Birefringence is at the heart of photonic applications. Layered van der Waals materials inherently support considerable out-of-plane birefringence. However, funnelling light into their small nanoscale area parallel to its optical axis remains challenging. Thus far, lack large in-plane birefringence has been a major roadblock hindering Here, we introduce presence broadband, low-loss, giant in biaxial Ta2NiS5, spanning an ultrawide-band from visible mid-infrared wavelengths 0.3-16 μm. The Δn ≈...
Vertical van der Waals heterostructures have aroused great attention for their promising application in next-generation nanoelectronic and optoelectronic devices. The dielectric screening effect plays a key role the properties of two-dimensional (2D) heterostructures. Here, we studied effects on excitonic critical points (CPs) WS2/MoS2 heterostructure using spectroscopic ellipsometry (SE). Owing to type-II band alignment heterostructure, charged carriers spatially separated created an...
Stacking two dimensional tunneling heterostructures has always been an important strategy to improve the optoelectronic device performance. However, there are still many disputes about blocking ability of monolayer (1L-) h-BN on interlayer coupling. Graphene/h-BN/MoS2 devices have reported for superior results. In this study, starting with graphene/h-BN/MoS2 heterostructures, we report experimental evidence 1L-h-BN barrier layer modulation effects electronic band structures and exciton...
Doping and alloying in Ga 2 O 3 to tune electronic photonic behaviors is still urgent but challenging, whereas has shown great promise deep‐ultraviolet (DUV) photodetectors functional high‐power devices. Herein, atomic‐layer‐Ti‐doped/incorporating (TGO) thin films with tailored optical properties the UV region from 200 400 nm are described. The Ti content amorphous TGO controlled adjusted up 11 at% during a plasma‐enhanced atomic layer deposition (PE‐ALD) process. composition‐dependent...
Abstract The enhancement of light absorption in an ultrathin two-dimensional material is critical for its optoelectronic and photonic applications. In this work, we investigated the enhanced layered PtSe 2 by engineering optical impedance attenuation -based metal–insulator–metal (MIM) absorber. For a monolayer MIM absorber, undesirable mismatch can be compensated using top patterned metal array structure to achieve near-perfect (99.95%), 8.6 times visible spectra. few-layer self-impedance...