A5036807643- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Advancements in Semiconductor Devices and Circuit Design
- Energetic Materials and Combustion
- Thermal and Kinetic Analysis
- Advanced Sensor and Control Systems
- Semiconductor materials and interfaces
- Advanced Algorithms and Applications
- Electromagnetic Compatibility and Noise Suppression
- Silicon and Solar Cell Technologies
- Advanced Photocatalysis Techniques
- Advancements in Battery Materials
- Integrated Circuits and Semiconductor Failure Analysis
- Marine and coastal ecosystems
- Fullerene Chemistry and Applications
- Radioactive element chemistry and processing
- Lanthanide and Transition Metal Complexes
- Advanced Battery Materials and Technologies
- Bone Tissue Engineering Materials
- Graphene research and applications
- Advanced Computational Techniques and Applications
- Carbon and Quantum Dots Applications
- Metal complexes synthesis and properties
Southwest University of Science and Technology
2016-2025
Fudan University
2021-2025
Ningbo University
2025
Harbin Engineering University
2013-2024
Ministry of Agriculture and Rural Affairs
2024
Zhejiang University of Technology
2021-2024
University of Science and Technology of China
2020-2024
Central Hospital of Zibo
2024
Institute of Oceanology
2010-2024
Zhengzhou University
2024
Abstract Lithium–sulfur (Li–S) batteries suffer from severe polysulfide shuttle, retarded sulfur conversion kinetics and notorious lithium dendrites, which has curtailed the discharge capacity, cycling lifespan safety. Engineered catalysts act as a feasible strategy to synchronously manipulate evolution behaviors of species. Herein, chlorine bridge‐enabled binuclear copper complex (Cu‐2‐T) is in situ synthesized electrolyte homogeneous catalyst for rationalizing Li–S redox reactions. The...
Microgrids with distributed generation sources are critical for reduction of greenhouse gas emissions and imported energy. However, power converters circuit breakers built silicon (Si) switches too bulky inefficient to be used in the microgrid system. The development high-voltage devices based on carbide (SiC) will a component building fluctuating generation. In this paper, physics technology (>10 kV) 4H-SiC devices, namely MOSFETs insulated gate bipolar transistors discussed. A detailed...
Graphitic carbon nitride quantum dots (CNQDs) are a new class of nanomaterial with an extraordinary photoluminescent property. Here, three highly water-soluble and CNQDs synthesized through green facile one-step hydrothermal approach, urea as the nitrogen source citric acid its salts sources. The photoluminescence (PL) performance demonstrated that fluorescence emission peak was altered by neither structures nor molar ratio to source. Three luminescent yield 40% were obtained when sodium...
Abstract This study systematically compared the material and electrical properties of Al2O3 films deposited on n-type 4H-SiC substrates using thermal plasma-enhanced atomic layer deposition (ALD), referred to as PE-Al2O3 T-Al2O3, respectively. Atomic force microscopy data indicates that roughness SiC by both ALD procedures is low. X-ray photoelectron spectroscopy analysis suggests proportion hydroxides T-Al2O3 surfaces greater than PE-Al2O3. Based O 1s energy loss spectra fitting absorption...
Metal-oxide-semiconductor capacitors were fabricated on germanium substrates by using metalorganic-chemical-vapor-deposited HfO2 as the dielectric and TaN metal gate electrode. It is demonstrated that a surface annealing step in NH3 ambient before deposition could result significant improvement both leakage current equivalent oxide thickness (EOT). was possible to achieve capacitor with an EOT of 10.5 Å 5.02×10−5 A/cm2 at 1 V bias. X-ray photoelectron spectroscopy analysis indicates...
The nitro-aromatic explosives of NB, PNP and 2,4-DNP (40 mg L<sup>−1</sup>) could be completely degraded by MoSe<sub>2</sub> 3D microspheres for 3.5 h, 1.5 h 2.5 under visible light irradiation.
The development of high-performance insensitive energetic materials is important because the increasing demand for these in military and civilian applications. A novel 3D metal-organic framework (MOF) exceptionally high energy content, [Pb(BTO)(H2O)]n, was synthesized structurally characterized by single crystal X-ray diffraction, featuring a three-dimensional parallelogram porous framework, where BTO represents 5,5'-bistetrazole-1,1'-diolate. thermal stability properties were determined,...
An alternative surface passivation process for high-k Ge metal-oxide-semiconductor (MOS) device has been studied. The SiH4 annealing was implemented prior to HfO2 deposition. X-ray photoelectron spectroscopy analysis results show that the can greatly prevent formation of unstable germanium oxide at and suppress out-diffusion after electrical measurement shows an equivalent thickness 13.5Å a leakage current 1.16×10−5A∕cm2 1V gate bias achieved TaN∕HfO2∕Ge MOS capacitors with treatment.
This paper discusses the recent progress in large area silicon carbide (SiC) DMOSFETs and junction barrier Schottky (JBS) diodes. 1.2 kV 10 SiC have been produced with die areas greater than 0.64 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . JBS diode dies also rated at exceeding 1.5 These results demonstrate that power devices provide a significant leap forward performance for industrial electronics applications. At kV, offer...
The forward and reverse bias dc characteristics, the long-term stability under bias, recovery performance of 4H-SiC junction barrier Schottky (JBS) diodes that are capable blocking in excess 10 kV with conduction up to A at a voltage less than 3.5 V (at 25degC) described. show positive temperature coefficient resistance stable height 200degC. operation continuous current injection 20 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> 8...
As a common cardiovascular disease, atrial fibrillation has the characteristics of high morbidity, disability, and fatality rates, seriously endangering human health sustainability. Some research confirmed that environmental factors are related to risk illness death from diseases (including fibrillation), while there is still little comparison on situation two cities in China. This uses medical data Shanghai Kunming establishing, through two-step research, logistic models compare impacts...
The gradient temperature was manipulated to construct hollow irregular carbon spheres with regulated intrinsic defects and surface area targeting favorable potassium storage. An enlarged area, increased defects, superior conductivity induced more surface-active interfaces. These actions facilitated a high reversible capacity as well excellent cycling stability.