A5046764792- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Electromagnetic Compatibility and Noise Suppression
- Multilevel Inverters and Converters
- Semiconductor materials and interfaces
- Organoboron and organosilicon chemistry
- Advancements in Semiconductor Devices and Circuit Design
- Boron Compounds in Chemistry
- Chemical synthesis and alkaloids
- Pulsed Power Technology Applications
- Advanced DC-DC Converters
- Copper Interconnects and Reliability
- Radioactive element chemistry and processing
- HVDC Systems and Fault Protection
- Chemical Synthesis and Analysis
- Alkaloids: synthesis and pharmacology
- Organometallic Compounds Synthesis and Characterization
- Advanced ceramic materials synthesis
- Inorganic and Organometallic Chemistry
- Asymmetric Synthesis and Catalysis
- Chemical Synthesis and Reactions
- Chemical Synthesis and Characterization
- Analytical chemistry methods development
- Crystal structures of chemical compounds
- Thin-Film Transistor Technologies
University of Kalyani
2021-2025
Bhabha Atomic Research Centre
1987-2025
Rochester Institute of Technology
2025
University of Leicester
2023-2024
CMR University
2024
University of Delhi
2013-2024
Rajshahi Medical College
2022-2023
Sharda University
2022
Samsung (India)
2021-2022
Sylhet MAG Osmani Medical College
2022
Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOSFETs is increased significantly after passivation SiC/SiO/sub 2/ interface states near conduction band edge by high temperature anneals nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below edge, trap density decreases from approximately 2/spl times/10/sup 13/ to 12/ eV/sup -1/ cm/sup -2/ following oxide 1175/spl deg/C...
The majority carrier domain of power semiconductor devices has been extended to 10 kV with the advent SiC MOSFETs and Schottky diodes. exhibit excellent static dynamic properties encouraging preliminary reliability. Twenty-four twelve diodes have assembled in a half H-bridge module increase current handling capability 120 A per switch without compromising die-level characteristics. For first time, custom designed system (13.8 465/√3 V solid state substation) successfully demonstrated these...
Microgrids with distributed generation sources are critical for reduction of greenhouse gas emissions and imported energy. However, power converters circuit breakers built silicon (Si) switches too bulky inefficient to be used in the microgrid system. The development high-voltage devices based on carbide (SiC) will a component building fluctuating generation. In this paper, physics technology (>10 kV) 4H-SiC devices, namely MOSFETs insulated gate bipolar transistors discussed. A detailed...
The electrical performance of SiC-based microelectronic devices is strongly affected by the densities interfacial traps introduced chemical and structural changes at SiO2∕SiC interface during processing. We analyzed structure chemistry this for thermally grown SiO2∕4H-SiC heterostructure using high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, spatially resolved energy-loss spectroscopy. analyses revealed presence distinct layers, several nanometers thick, on...
Benzazepinoindoles represent a fascinating class of heterocyclic compounds known for their structural complexity and significant biological activity, including potential anticancer antimicrobial activities. The benzazepinoindole scaffold, notable its relevance, serves as an ideal template drug discovery, particularly applications in antiproliferative, anti‐inflammatory therapies. In this work, we have developed efficient methodology the synthesis dihydro‐ tetrahydro‐benzazepinoindoles,...
In this paper, the extension of SiC power technology to higher voltage 10 kV/10 A DMOSFETs and JBS diodes is discussed. new kV/120 module using these kV devices also described which enables a compact 13.8 465/√3 solid state substation (SSPS) rated at 1 MVA.
This paper presents the characteristics of first commercial 1200V 100A SiC MOSFET module and compares it with state-of-the-art silicon IGBT same rating. The results show that has faster switching speed much lower loss compared IGBT. Moreover, will increase significantly for higher operation temperature, while is almost different temperature. A model been implemented in PLECs order to simulation losses. An 11kW singlephase inverter prototype 600V dc bus 380Vac output voltage built evaluating...
Silicon Carbide (SiC) devices and modules have been developed with high blocking voltages for Medium Voltage power electronics applications. do not exhibit higher voltage capability due to its relatively low band gap energy compared SiC counterparts. For the first time, 12kV IGBTs fabricated. These excellent switching static characteristics. A Three-level Neutral Point Clamped Source Converter (3L-NPC VSC) has simulated newly IGBTs. This 3L-NPC is used as a 7.2kV grid interface solid state...
BackgroundFew studies have compared SARS-CoV-2 vaccine immunogenicity by ethnic group. We sought to establish whether cellular and humoral immune responses vaccination differ according ethnicity in UK Healthcare workers (HCWs).MethodsIn this cross-sectional analysis, we used baseline data from two immunological cohort conducted HCWs Leicester, UK. Blood samples were collected between March 3, September 16, 2021. excluded HCW who had not received doses of at the time sampling those...
Forward voltage instability, or Vf drift, has confounded high SiC device makers for the last several years. The community recognized that root cause of drift in bipolar devices is expansion basal plane dislocations (BPDs) into Shockley Stacking Faults (SFs) within regions experience conductivity modulation. In this presentation, we detail relatively simple procedures reduce density inducing BPDs epilayers to <10 cm-2 and permit fabrication with very good stability. first low BPD technique...
Fast neutron response measurements are reported for radiation detectors based on large-volume SiC p-i-n diodes. Multiple reaction peaks observed 14-MeV reactions with the silicon and carbon nuclides in detector. A high degree of linearity is /sup 28/Si(n,/spl alpha//sub i/) set six energy levels product 25/Mg nucleus, pulse height defect differences between 12/C(n,/spl 0/)/sup 28/ Si(n,/spl responses discussed. Energy spectrometry applications fission fusion fields also
This paper discusses the recent progress in large area silicon carbide (SiC) DMOSFETs and junction barrier Schottky (JBS) diodes. 1.2 kV 10 SiC have been produced with die areas greater than 0.64 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . JBS diode dies also rated at exceeding 1.5 These results demonstrate that power devices provide a significant leap forward performance for industrial electronics applications. At kV, offer...
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTBoron analogs of amino acids. Synthesis and biological activity boron betaineBernard F. Spielvogel, Leonard Wojnowich, Mrinal K. Das, Andrew T. McPhail, Karl D. HargraveCite this: J. Am. Chem. Soc. 1976, 98, 18, 5702–5703Publication Date (Print):September 1, 1976Publication History Published online1 May 2002Published inissue 1 September 1976https://pubs.acs.org/doi/10.1021/ja00434a053https://doi.org/10.1021/ja00434a053research-articleACS...
The first enantioselective total syntheses of architecturally interesting prenylated pyrroloindole alkaloids, (-)-pseudophrynamines 272A (3d) and 270 (3b), have been achieved starting from enantioenriched 2-oxindoles having all-carbon quaternary stereocenters. A common strategy involving a thio-urea catalyzed aldol reaction is employed for the synthesis both spiro(pyrrolidinyl-oxindole) hexahydropyrrolo[2,3-b]indole alkaloids.
A method to form SiO2/SiC metal–oxide–semiconductor structures by oxidation of a thin polycrystalline silicon (polysilicon) layer deposited on SiC is demonstrated. The time used sufficient oxidize all the polysilicon while short enough at 1050 °C insure insignificant underlying SiC. Since highly anisotropic, this allows uniform oxide formation nonplanar surface. interface quality comparable that obtained with thermal oxidation.
SiC bipolar devices are favored over unipolar for applications requiring breakdown voltage in excess of 10 kV. We have designed and fabricated p-channel insulated-gate transistors (IGBTs) 4H-SiC with 12-kV blocking high-power applications. A differential on-resistance 18.6 mOmega ldr cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> was achieved a gate bias 16 V, corresponding to forward drop 5.3 V at 100 A/cm , indicating strong...
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTBoron analogs of the .alpha.-amino acids. Synthesis, x-ray crystal structure, and biological activity ammonia-carboxyborane, boron analog glycineBernard F. Spielvogel, Mrinal K. Das, Andrew T. McPhail, Kay D. Onan, Iris H. HallCite this: J. Am. Chem. Soc. 1980, 102, 20, 6343–6344Publication Date (Print):September 1, 1980Publication History Published online1 May 2002Published inissue 1 September 1980https://doi.org/10.1021/ja00540a031RIGHTS &...
Recent dramatic advances in the development of large area silicon carbide (SiC) MOSFETs along with their companion JBS diode technology make it possible to design and fabricate high power SiC switch modules. An effort underway by Air Force Research Laboratory has lead a 1.2 kV/100 A dual module capable operating at junction temperature 200degC. Two additional efforts are set on achieving megawatt goal. Army is focused kV modules be used for traction conversion applications. The highest 1200...
Silicon carbide (SiC) is more favorable than (Si) to build high voltage devices due its wider band-gap and higher critical field strength. Especially, the SiC MOSFETs are finding their niche in 1 kV range, which currently dominated by Si IGBTs. This paper aims at demonstrating power frequency operation of MOSFETs, as a means evaluate feasibility using for density applications. The sample chosen this study 1200 V, 20 A, co-packed with 10 A JBS diodes - manufactured CREE Inc. dual active...
An organocatalytic enantioselective aldol reaction using paraformaldehyde as C1-unit has been developed for the synthesis of 2-oxindoles sharing vicinal all-carbon quaternary stereocenters. The methodology is eventually employed in formal total (+)-folicanthine (1b).