A5042440533- Advanced Chemical Physics Studies
- 2D Materials and Applications
- Atmospheric chemistry and aerosols
- Graphene research and applications
- Advanced Combustion Engine Technologies
- Molecular Junctions and Nanostructures
- Semiconductor materials and devices
- Molecular Spectroscopy and Structure
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Chalcogenide Semiconductor Thin Films
- Radio Frequency Integrated Circuit Design
- Astrophysics and Star Formation Studies
- Advancements in Semiconductor Devices and Circuit Design
- Organic Electronics and Photovoltaics
- Semiconductor materials and interfaces
- Catalysis and Oxidation Reactions
- Nanowire Synthesis and Applications
- Perovskite Materials and Applications
- Energy Harvesting in Wireless Networks
- Atomic and Subatomic Physics Research
- Quantum Dots Synthesis And Properties
- Advanced Photocatalysis Techniques
- Spectroscopy and Laser Applications
- Transition Metal Oxide Nanomaterials
Wuhan University
1993-2024
Shaanxi University of Technology
2016-2024
Shandong Academy of Sciences
2024
Qilu University of Technology
2024
Weifang Medical University
2023
Xi’an University
2020-2022
Xi'an University of Technology
2020-2022
Hanzhong University
2016-2020
Institute of Catalysis and Petrochemistry
2020
Peking University
2014-2018
Monolayer Bi<sub>2</sub>O<sub>2</sub>Se is a promising post-silicon-era semiconductor candidate because of its simultaneous excellent device performance and high ambient stability.
This study presents the experimental and analysis of double‐LCL resonant compensation network based wireless power transfer (WPT) system for electric vehicles. The WPT could accomplish both constant current unity‐power‐factor transmitting terminal receiving terminal. In addition, inverter can achieve zero‐voltage‐switching. multi‐physical characteristics terminals on LCL are analysed in detail. Finally, three‐dimensional finite element an with circular pads is setup to verify theoretical...
Crossed molecular beams experiments on dicarbon molecules, C2(X1Σ+g/a3Πu), with unsaturated hydrocarbons acetylene (C2H2(X1Σ+g)), ethylene (C2H4(X1Ag)), methylacetylene (CH3CCH(X1A1)), and allene (H2CCCH2 (X1A1)) were carried out at 18 collision energies between 10.6 50.3 kJ mol−1 utilizing a universal crossed machine to untangle the reaction dynamics forming hydrogen deficient hydrocarbon radicals in circumstellar envelopes of carbons stars cold clouds. We find that all reactions proceed...
Bismuthene, a bismuth analogue of graphene, has moderate band gap, high carrier mobility, topological nontriviality, stability at room temperature, an easy transferability, and is very attractive for electronics, optronics, spintronics. The electrical contact plays critical role in actual device. interfacial properties monolayer (ML) bismuthene with the metal electrodes spanning wide work function range field-effect transistor configuration are systematically studied first time by using both...
Arsenene, arsenic analogue of graphene, as an emerging member two-dimensional semiconductors (2DSCs), is quite promising in next-generation electronic and optoelectronic applications. The metal electrical contacts play a vital role the charge transport photoresponse processes nanoscale 2DSC devices even can mask intrinsic properties 2DSCs. Here, we present first comprehensive study contact monolayer (ML) arsenene with different electrodes by using ab initio calculations quantum simulations....
Schematic diagram of p-type Ohmic contact procedure with the help deeply expanded MIGS under a gate voltage for in-plane ML MX<sub>2</sub> 1T′–2H heterojunctions.
Abstract This study systematically compared the material and electrical properties of Al2O3 films deposited on n-type 4H-SiC substrates using thermal plasma-enhanced atomic layer deposition (ALD), referred to as PE-Al2O3 T-Al2O3, respectively. Atomic force microscopy data indicates that roughness SiC by both ALD procedures is low. X-ray photoelectron spectroscopy analysis suggests proportion hydroxides T-Al2O3 surfaces greater than PE-Al2O3. Based O 1s energy loss spectra fitting absorption...
The input-parallel output-parallel (IPOP) dc–dc converters are suitable for low-voltage and high-current applications, especially using high-frequency isolation instead of traditional line-frequency transformer ac–dc in dc distribution. Compared to the existing closed-loop control IPOP converters, magnetic-coupling current-balancing (MC-CB) cells based <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LLC</i> resonant converter modules proposed...
The contrast of the band structures silicene and germanene on metal substrates. Dirac cone is identifiable.
Two-dimensional (2D) black phosphorene (BP) field-effect transistors (FETs) show excellent device performance but suffer from serious instability under ambient conditions. Isoelectronic 2D germanium selenide (GeSe) shares many similar properties with BP, such as high carrier mobility and anisotropy, is stable Herein, we explore the quantum transport of sub-5 nm ML GeSe MOSFETs using first-principles simulation. A p-type (zigzag-directed) superior to other types (n- armchair-directed n-type...
We present the design and characteristics of an ultrahigh vacuum compatible laser ablation source which can be operated in a crossed molecular beam machine at pressures as low 10−9Torr. This unit provides intense supersonic beams up to 3×1013cm−3 reactant species (carbon atoms, dicarbon, tricarbon) interaction region machine. Practical delay time windows between pulsed valve releasing seeding gas have been determined 16 630 16645μs, i.e., firing 150–165μs after 80μs trigger. The...
Layered double hydroxide Cd(1)(-)(x)()Al(x)()(OH)(2)(DS)(x)().3.0H(2)O (CdAlDS) and a related salt compound Cd(2)(OH)(3)(DS).2.5H(2)O (CdDS), where DS stands for dodecyl sulfate sandwiched between two adjacent inorganic layers, have been synthesized used as precursors CdS nanoparticle growth. Through gas/solid reaction, nanocrystals implanted in the layer matrixes of layered hydroxides are grown, sizes vary range 3-6 nm diameter. The presence trivalent Al cations can be taken advantage to...
Semiconducting single-layer (SL) and few-layer MoS2 have a flat surface, free of dangling bonds. Using density functional theory coupled with non-equilibrium Green's function method, we investigate the spin-polarized transport properties Co/2D MoS2/Co Ni/2D MoS2/Ni junctions layer numbers N = 1, 3, 5. Well-defined interfaces are formed between metal electrodes. The SL spacer almost metallic owing to strong coupling ferromagnets, while those tunneling few spacer. Both large magnetoresistance...
The design of a modular, versatile interlock system for ultrahigh vacuum machines is presented. This can monitor the pressure (ultrahigh and high vacuum), status power (power failure, fluctuations, scheduled outages), operation mode pumps (operation versus failure), flow cooling water, humidity temperature levels in laboratory, as well concentration toxic gases. If any set points triggered, machine protected fully automatically. also interfaced to an automated paging system, thus...
Spin filtering in a metal/organic-ferromagnet/metal sandwich device was investigated based on an extended $\mathrm{SSH}+\text{Heisenberg}$ ($\mathrm{SSH}=\mathrm{Su}$-Schrieffer-Heeger) model and the Landauer-B\"uttiker formula. A large spin-polarized current predicted, which is dependent property of organic ferromagnetic interlayer as well interfacial interactions between metal electrode ferromagnet. The effect thermal fluctuation radical spins polarization discussed. Our investigation...
Selector device is critical in high-density cross-point resistive switching memory arrays for suppressing the sneak leakage current path. Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Se xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> based ovonic threshold switch (OTS) selectors have recently demonstrated strong performance with high on-state current, nonlinearity and endurance. Detailed study of its reliability still lacking...
Ultrathin oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, ultrathin indium (In2O3) field-effect (FETs) with thicknesses down to 0.4 nm exhibit an extremely high drain current (104 μA/μm) transconductance (4000 μS/μm). Here, we employ ab initio quantum transport simulation investigate the performance limit of sub-5 gate length (Lg) In2O3 FETs. Based on International Technology...