Xiaotian Sun

ORCID: 0000-0002-2769-6242
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About
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Research Areas
  • 2D Materials and Applications
  • Graphene research and applications
  • MXene and MAX Phase Materials
  • Topological Materials and Phenomena
  • X-ray Diffraction in Crystallography
  • Crystallization and Solubility Studies
  • Advancements in Battery Materials
  • Advanced Battery Materials and Technologies
  • Metal-Organic Frameworks: Synthesis and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Higher Education and Teaching Methods
  • Advancements in Semiconductor Devices and Circuit Design
  • Nanowire Synthesis and Applications
  • Semiconductor materials and devices
  • Crystallography and molecular interactions
  • Perovskite Materials and Applications
  • Quantum and electron transport phenomena
  • Advanced Thermoelectric Materials and Devices
  • Magnetism in coordination complexes
  • Advanced Chemical Physics Studies
  • Technology-Enhanced Education Studies
  • Molecular Junctions and Nanostructures
  • Metal complexes synthesis and properties
  • Plant Water Relations and Carbon Dynamics
  • Crystal structures of chemical compounds

Luoyang Normal University
2009-2025

Inner Mongolia Agricultural University
2023-2024

Harvard University
2023

Jiangnan University
2023

Xiamen University
2022

Luoyang Institute of Science and Technology
2018-2021

Hebei Normal University
2020-2021

Lawrence Berkeley National Laboratory
2020

Berkeley College
2020

Max Planck Institute for Nuclear Physics
2020

We herein introduce a facile, low-cost photochemical method capable of rapid (<40 min) and large-quantity (∼10 g) production highly fluorescent (quantum yield: 25%) silicon nanoparticles (SiNPs) tunable optical properties (peak emission wavelength in the range 470–560 nm) under ambient air conditions, by introducing 1,8-naphthalimide as reducing agent surface ligands. The as-prepared SiNPs feature robust storage stability photostability preserving strong stable during long-term (>3 h)...

10.1021/acsnano.5b00683 article EN ACS Nano 2015-05-31

Abstract Since Si‐based Moore's law is physically limited, 2D semiconductors are proposed as successors to continue shrinking the transistor size for more Moore electronics. However, limited by experimental technology bottlenecks, theoretical predicted superiorities of transistors over state‐of‐the‐art Si have been lacking concrete evidence a decade. In this review, recent exciting breakthroughs presented, including gate length miniaturization sub‐1 nm limit, electrode contact optimization...

10.1002/adfm.202402474 article EN Advanced Functional Materials 2024-04-12

Graphene and its water-soluble derivative, graphene oxide (GO), have attracted huge attention because of their interesting physical chemical properties, they shown wide applications in various fields including biotechnology biomedicine. Recently, GO has been to be the most efficient inhibitor for α-chymotrypsin (ChT) compared with all other artificial inhibitors. However, how interacts bioactive proteins potential enzyme engineering rarely explored. In this study, we investigate interactions...

10.1021/am500167c article EN ACS Applied Materials & Interfaces 2014-05-06

For a long time, two-dimensional (2D) hexagonal ${\mathrm{MoS}}_{2}$ was proposed as promising material for the valleytronic system. However, limited size of growth and low carrier mobility in restrict its further application. Very recently, new kind 2D MXene, $\mathrm{Mo}{\mathrm{Si}}_{2}{\mathrm{N}}_{4}$, successfully synthesized with large size, excellent ambient stability, considerable hole mobility. In this paper, based on first-principles calculations, we predict that...

10.1103/physrevb.103.035308 article EN Physical review. B./Physical review. B 2021-01-21

Novel two-dimensional (2D) semiconductors arsenene and antimonene are promising channel materials for next-generation field effect transistors (FETs) because of the high carrier mobility stability under ambient conditions. Stimulated by recent experimental development sub-5 nm 2D MoS2 FETs, we investigate device performance monolayer (ML) in region using accurate ab initio quantum transport simulation. We reveal that optimized double-gate (DG) ML metal-oxide-semiconductor FETs (MOSFETs) can...

10.1021/acsami.8b03840 article EN ACS Applied Materials & Interfaces 2018-06-07

Bismuthene, a bismuth analogue of graphene, has moderate band gap, high carrier mobility, topological nontriviality, stability at room temperature, an easy transferability, and is very attractive for electronics, optronics, spintronics. The electrical contact plays critical role in actual device. interfacial properties monolayer (ML) bismuthene with the metal electrodes spanning wide work function range field-effect transistor configuration are systematically studied first time by using both...

10.1021/acsami.7b03833 article EN ACS Applied Materials & Interfaces 2017-06-09

Molybdenum disulfide (MoS2), a kind of graphene-like, two-dimensional material, has attracted great interest because its unique properties and potential applications in electronics sensors. In this paper, first-principle calculations grand canonical Monte Carlo (GCMC) simulations are performed used to show that the MoS2 layer is efficient at absorbing non-polar gases. Compared with popular gas sorbents (metal organic frameworks carbon-based materials), additional advantages, including large...

10.1039/c5cp00161g article EN Physical Chemistry Chemical Physics 2015-01-01

We investigate the structural stability, mobility and electronic properties of typical point defects in 2D arsenene, antimonene antimony arsenide.

10.1039/c7tc00306d article EN Journal of Materials Chemistry C 2017-01-01

Valley Zeeman-type splitting and its application in valley pseudospin field effect transistors.

10.1039/c8nr04253e article EN Nanoscale 2018-01-01

With the scaling limits of silicon-based MOS technology, critical and challenging issue is to explore more alternative materials improve performance devices. Two-dimensional (2D) semiconductor WSe2 with a proper band gap inherent stability under ambient conditions makes it potential channel material for realizing new generation field-effect transistors (FETs). In light low on-state current experimental sub-10 nm 2D MoS2 FETs, we limitation monolayer (ML) device by using accurate ab initio...

10.1021/acsami.0c01750 article EN ACS Applied Materials & Interfaces 2020-04-14

The ultra-short gate-length ML MoSi 2 N 4 MOSFET can meet the ITRS requirements with low power dissipation.

10.1039/d1tc02937a article EN Journal of Materials Chemistry C 2021-01-01

Antiferromagnetism within the two-dimensional (2D) family offers a platform for spintronics. The emergent 2D semiconductor ${\mathrm{Cr}\mathrm{PS}}_{4}$ is proved to be composed of ferromagnetic layers with antiferromagnetic coupling along stacking direction in experiment. By using first-principles quantum-transport simulation, we evaluate spin-resolved transport magnetic tunnel junction built by barrier large thickness ranges. We find magnetoresistance generally increases number from 140%...

10.1103/physrevapplied.16.024011 article EN Physical Review Applied 2021-08-06

Since silicon-based field-effect transistors (FETs) are approaching their scaling limit, two-dimensional (2D) semiconductors have been proposed as alternative channel materials. Recently, air-stable 2D trilayer (TL) MoTe2 FETs with a 4 nm gate length fabricated experimentally. To explore the device performance limit of monolayer FETs, we simulate sub-5 double-gate (DG) ML by using ab initio quantum transport method. We find that when taking negative capacitance technology and underlap into...

10.1021/acs.jpcc.1c01754 article EN The Journal of Physical Chemistry C 2021-08-26

Nanoscale particles have become promising materials in many fields, such as cancer therapeutics, diagnosis, imaging, drug delivery, catalysis, well biosensors. In order to stimulate and facilitate these applications, there is an urgent need for the understanding of interaction mode between nano-particles proteins. this study, we investigate orientation adsorption several enzymes (cytochrome c, RNase A, lysozyme) 4 nm/11 nm silica nanoparticles (SNPs) by using molecular dynamics (MD)...

10.1371/journal.pone.0107696 article EN cc-by PLoS ONE 2014-09-22

Polymer with crosslink design are proposed to increase the S content <italic>via</italic> inverse vulcanization. It can be a promising Li–S cathode materials.

10.1039/d0ta06537d article EN Journal of Materials Chemistry A 2020-01-01

Complementary metal oxide semiconductor (CMOS) devices require both n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs), but achieving types that meet the requirements of International Technology Roadmap for Semiconductors (ITRS) at ultrashort gate lengths is a challenge. Recently synthesized two-dimensional crystal ${\mathrm{WSi}}_{2}{\mathrm{N}}_{4}$ exhibits high theoretical hole electron carrier mobilities. In this study, we investigate performance limits...

10.1103/physrevapplied.20.064044 article EN Physical Review Applied 2023-12-26

Chalcogen-bonded [Se–N]2 is a strong cyclic supramolecular synthon in chemistry. Selenadiazole commonly used the synthesis of [Se–N]₂. One nitrogen atom selenadiazole molecule participates formation [Se–N]₂, while other can participate types noncovalent bonds. Investigating effect neighboring bonds on [Se–N]₂ beneficial for its further and application. In this study, we combined theoretical calculations crystallography to explore I···N halogen both gas phase crystalline phase. Gas-phase show...

10.20944/preprints202501.1529.v1 preprint EN 2025-01-21

Chalcogen-bonded [Se-N]2 is a strong cyclic supramolecular synthon in chemistry. Selenadiazole commonly used the synthesis of [Se-N]2. One nitrogen atom selenadiazole molecule participates formation [Se-N]2, while other can participate types noncovalent bonds. Investigating effect neighboring bonds on beneficial for its further and application. In this study, we combined theoretical calculations crystallography to explore I···N halogen both gas phase crystalline phase. Gas-phase show that...

10.3390/ijms26052324 article EN International Journal of Molecular Sciences 2025-03-05

Strong supramolecular synthons assembled by two O−H···N hydrogen bonds and N−Se···O chalcogen have been identified via an X-ray crystallographic study. At the same time, combined with quantum chemical...

10.1039/d5ce00262a article EN CrystEngComm 2025-01-01

Embedding transition-metal (TM) atoms into nonmagnetic nanomaterials is an efficient way to induce magnetism. Using first-principles calculations, we systematically investigated the structural stability and magnetic properties of TM from Sc Zn embedded silicene with single vacancy (SV) double vacancies (DV). The binding energies for different correlate d-shell electrons. Sc, Ti, Co show largest as high 6 eV, while has lowest energy about 2 eV. moment can be modulated by embedding V Co, which...

10.1063/1.4921699 article EN Applied Physics Letters 2015-06-01
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