About
Contact & Profiles
A5042525741
Research Areas
- Radiation Effects in Electronics
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- VLSI and Analog Circuit Testing
- Electrostatic Discharge in Electronics
- 3D IC and TSV technologies
- Semiconductor Lasers and Optical Devices
- Nanofabrication and Lithography Techniques
Shanghai Zhangjiang Laboratory
2023-2024
Xidian University
2017-2021
10.1007/s10825-018-1254-1
article
EN
Journal of Computational Electronics
2018-09-26
10.1007/s10836-017-5694-5
article
EN
Journal of Electronic Testing
2017-12-01
10.1007/s10825-018-1201-1
article
EN
Journal of Computational Electronics
2018-06-15
10.1016/j.vlsi.2024.102170
article
EN
Integration
2024-02-13
10.1007/s10825-021-01713-8
article
EN
Journal of Computational Electronics
2021-05-09
Abstract Terrestrial single-event transients (SETs) are mainly induced by secondary ions of neutron-induced nuclear reactions, which do not cross the sensitive drain in most cases. Technology computer-aided design (TCAD) simulations show that those cases, both diffusion-collection current and burst-plateau-type waveform could occur nanoscale complementary metal-oxide-semiconductor (CMOS) technology. The necessity including recombination effect model is identified, an equivalent circuit (ECM)...
10.21203/rs.3.rs-2443894/v1
preprint
EN
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Research Square (Research Square)
2023-01-13
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