A5063094836- Nanowire Synthesis and Applications
- Mechanical and Optical Resonators
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Advanced MEMS and NEMS Technologies
- Gyrotron and Vacuum Electronics Research
- Particle Detector Development and Performance
- Electron and X-Ray Spectroscopy Techniques
- solar cell performance optimization
- Gas Sensing Nanomaterials and Sensors
- Photocathodes and Microchannel Plates
- Plasma Diagnostics and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and interfaces
- Silicon Nanostructures and Photoluminescence
Reykjavík University
2021-2024
Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as pressure sensor. The samples were produced from p-type (100) Si wafers using silver catalyzed top-down etching process. response these SiNW was analyzed by measuring their I-V characteristics under applied uniaxial well...
Molecular dynamics simulations, with full Coulomb interaction are used to model short-pulse photoemission from a finite area in microdiode. We demonstrate three emission regimes, source-limited emission, space-charge limited for short-pulses, and the steady state. show that beam brightness is at maximum during transition regime short pulses. From our simulations it apparent important factor emitter spot size when estimating critical charge density electron emission.
Abstract The present work reports the evolution and growth of GeGaAs(O) polytype nanoislands over GaAs p‐type substrate with photoemission application in mind. Several morphological transformations from NIs to simultaneously nanopits/holes are observed as a function annealing parameters that is, temperature (350‐800°C) time (5‐90 minutes). Structural elemental analyses executed using atomic force microscopy, scanning electron microscopy energy dispersive X‐ray spectroscopy. Photoemission...
Silicon nanowires (SiNWs) are known to exhibit large piezoresistance (PZR) effect, making it suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as pressure sensor. The samples were produced from p-type (100) Si wafers using silver catalysed top-down etching process. response these SiNW was analysed by measuring their I-V characteristics under applied uniaxial well isostatic...
We report on the structure and electrical characteristics of silicon nanowire arrays prepared by metal assisted chemical etching (MACE) method, investigated cross-sectional scanning electron microscopy (SEM) high resolution X-ray diffraction (HR-XRD) methods. SEM micrographs show merged parallel nanowires, with lengths 700 nm 1000 nm, resulted after 1.5 min 5 time, respectively. reciprocal space maps (RSMs) around Si (004) lattice point indicate presence 0D structural defects rather than...
We investigate the formation and evolution of Ga droplets over GaAs (001) substrate with without Ge top layer (8 nm). Various morphological transformation from holes to were observed as a function annealing parameters. It was that application plays vital role in incorporating oxygen into system. Moreover, potential these structures photocathode is discussed, demonstrating increased photoemission.