Muhammad Taha Sultan

ORCID: 0000-0002-1167-3513
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Research Areas
  • Silicon Nanostructures and Photoluminescence
  • Nanowire Synthesis and Applications
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Gas Sensing Nanomaterials and Sensors
  • Transition Metal Oxide Nanomaterials
  • Semiconductor materials and interfaces
  • Thin-Film Transistor Technologies
  • Magneto-Optical Properties and Applications
  • Ga2O3 and related materials
  • Magnetic Properties and Synthesis of Ferrites
  • Magnetic properties of thin films
  • Semiconductor Quantum Structures and Devices
  • Ion-surface interactions and analysis
  • Luminescence Properties of Advanced Materials
  • Analytical Chemistry and Sensors
  • Acoustic Wave Resonator Technologies
  • Advanced Sensor and Energy Harvesting Materials
  • Magnetic Properties and Applications
  • Photonic and Optical Devices
  • Multiferroics and related materials
  • Advanced MEMS and NEMS Technologies
  • Glass properties and applications
  • Optical Coatings and Gratings
  • Phase-change materials and chalcogenides

Reykjavík University
2017-2025

University of Iceland
2021-2025

Physical Sciences (United States)
2025

Ibb University
2017

University of Hyderabad
2009-2010

Zn-ferrite (ZnFe2O4) thin films were deposited by rf-magnetron sputtering on glass substrates at room temperature (RT) in pure oxygen environment. The as-deposited investigated x-ray diffraction to show that single phase nanocrystalline spinel patterns belong zinc ferrite. magnetization shows ferrimagnetic behavior, and it strongly depends working pressure. maximum of 230 emu/cm3 (42 emu/g) RT is obtained for the film 27 mTorr vacancy concentration random distribution Zn2+ Fe3+ both...

10.1063/1.3072381 article EN Journal of Applied Physics 2009-02-19

We investigate the structural and metal–insulator transition (MIT) behavior of epitaxial V2O3 films fabricated by reactive direct current magnetron sputtering on r, a, c, m-plane Al2O3 substrates, in both as-received annealed states. Characterization MIT grown substrates demonstrated significant changes observed properties, i.e., r-plane showed ≈2 order increase magnitude, ≈6 orders, c-plane exhibited a reduction ≈3 compared to un-annealed whereas for a-plane, it revealed shift higher...

10.1063/5.0245429 article EN cc-by Journal of Applied Physics 2025-01-27

Abstract Ammonia (NH3) is a reductive toxic gas, and prolonged exposure can lead to severe health issues. Additionally, elevated Levels of NH 3 in exhaled breath serve as biomarker for various diseases. Consequently, monitoring the air medical diagnostics critical public safety. However, developing gas sensors that function effectively under high humidity conditions, such those found human breath, has proven challenging. In this study, we present simple cost-effective sensor based on an...

10.1088/1361-6641/adb20a article EN Semiconductor Science and Technology 2025-02-04

Abstract In this study, we investigate an innovative hybrid structure of silicon nanowires (SiNWs) coated with polyaniline (PANI):metal oxide (MO x ) nanoparticles, i.e., WO 3 and TiO 2 , for respiratory sensing. To date, few attempts have been made to utilize such structures that application. The SiNWs were fabricated using metal-assisted chemical etching (MACE), whereas PANI:MO was deposited oxidative polymerization. characterized Raman spectroscopy, X-ray diffraction, scanning electron...

10.1088/1674-4926/24090035 article EN Journal of Semiconductors 2025-03-01

Thin films of zinc ferrite (ZnFe2O4) were deposited on glass substrates at room temperature in pure argon and oxygen environments by RF-magnetron sputtering. The structural optical properties the studied as a function O2 pressure using an RF power 100 W. XRD data show film having spinel structure. AFM images nanocrystalline nature films. particle size depends environment varies between 55 75 nm. smaller value is obtained for under environment. constants extracted from transmission spectra...

10.1088/0022-3727/42/11/115306 article EN Journal of Physics D Applied Physics 2009-05-15

Abstract Films of SiGe nanocrystals (NCs) in oxide have the advantage tuning energy band gap by adjusting NCs composition and size. In this study, SiGe-SiO 2 amorphous films were deposited magnetron sputtering on Si substrate followed rapid thermal annealing at 700, 800 1000 °C. We investigated with Si:Ge:SiO compositions 25:25:50 vol.% 5:45:50 vol.%. TEM investigations reveal major changes morphology (SiGe different sizes densities) produced Si:Ge ratio temperature. XPS also show that film...

10.1038/s41598-020-60000-x article EN cc-by Scientific Reports 2020-02-24

Accurate and fast breath monitoring is of great importance for various healthcare applications, example, medical diagnoses, studying sleep apnea, early detection physiological disorders. Devices meant such applications tend to be uncomfortable the subject (patient) pricey. Therefore, there a need cost-effective, lightweight, small-dimensional, non-invasive device whose presence does not interfere with observed signals. This paper reports on fabrication highly sensitive human respiratory...

10.3390/s23249901 article EN cc-by Sensors 2023-12-18

Ferromagnetic Resonance (FMR) studies were carried out as a function of orientation and temperature on RF-sputtered nanocrystalline thin films ZnFe2O4 having saturation magnetization (MS) 230 emu/c.c. The in-plane FMR linewidth (ΔH) increases the resonance field (HR) decreases with decrease in temperature. annealing film air at 500 °C for 3hrs ΔH confirming disorder source line broadening deposited films. effective (4πMeff) 1725 G gyromagnetic ratio (γeff) 3.08 GHz/kOe estimated using...

10.1088/1742-6596/200/7/072090 article EN Journal of Physics Conference Series 2010-01-01

SiGe‐SiO 2 ‐based structures present high interest for their photosensitivity from visible to short‐wavelength infrared. Herein, two postdeposition annealing procedures, that is, rapid thermal (RTA) and rapid‐like furnace (FA), are compared. Both RTA FA performed at 600 °C 1 min SiGe nanocrystals (NCs) formation in SiO matrix Si/SiO /SiGe/SiO deposited by magnetron sputtering. The imitates resulting enhanced spectral response. X‐ray diffraction, transmission electron microscopy, Raman...

10.1002/adpr.202300316 article EN cc-by Advanced Photonics Research 2024-06-19

Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as pressure sensor. The samples were produced from p-type (100) Si wafers using silver catalyzed top-down etching process. response these SiNW was analyzed by measuring their I-V characteristics under applied uniaxial well...

10.3390/s22176340 article EN cc-by Sensors 2022-08-23

Cu–Zn ferrite (Cu0.6Zn0.4Fe2O4) thin films were deposited using rf-magnetron sputtering on glass substrates at room temperature in pure Ar gas environment. The influence of variation pressure between 5 and 15 mT the crystal structure magnetization has been studied. XRD patterns show single phase nanocrystalline spinel with cubic symmetry. AFM images also confirm nature films. increases increase pressure. change explained view freezing some Cu-ions tetrahedral A-sites equivalent number Fe...

10.1063/1.3357316 article EN Journal of Applied Physics 2010-04-22

SiGe nanoparticles dispersed in a dielectric matrix exhibit properties different from those of bulk and have shown great potential devices for application advanced optoelectronics. Annealing is common fabrication step used to increase crystallinity form such system. A frequent downside annealing treatment the formation insulating SiO2 layer at matrix/SiGe interface, degrading optical structure. An process that could bypass this would therefore be interest. In work, short-time furnace...

10.1088/1361-6528/ab260e article EN Nanotechnology 2019-05-31

The study presents the synthesis of epitaxial V2O3 thin films on c-plane Al2O3 substrates by reactive high-power impulse (HiPIMS) and direct current (dcMS) magnetron sputtering. results reveal that for fixed deposition conditions discharge power, well defined layers can be attained using both HiPIMS dcMS. For dcMS we observe formation these down to flow rate values 1.3 sccm while an extended operation window much lower oxygen 0.5 without sacrificing structural quality films. Furthermore,...

10.1088/1361-6463/ac1463 article EN Journal of Physics D Applied Physics 2021-07-14

Multilayer structures comprising of SiO 2 /SiGe/SiO and containing SiGe nanoparticles were obtained by depositing layers using reactive direct current magnetron sputtering (dcMS), whereas, Si Ge co-sputtered dcMS high-power impulse (HiPIMS). The as-grown subsequently underwent rapid thermal annealing (550–900 °C for 1 min) in N ambient atmosphere. investigated X-ray diffraction, high-resolution transmission electron microscopy together with spectral photocurrent measurements, to explore...

10.3762/bjnano.10.182 article EN cc-by Beilstein Journal of Nanotechnology 2019-09-17

The photosensing properties related to the structure of GeSi/TiO2 multilayers prepared under different conditions are studied. TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> cap/(GeSi/TiO ) (ML) were deposited by magnetron sputtering (MS) and annealed rapid thermal annealing. Trilayers cap/GeSi/TiO (TL) also using reactive high power impulse MS (HiPIMS) for layers dc GeSi layer. For TL samples a two-step annealing was employed, one...

10.1109/smicnd.2017.8101154 article EN 2017-10-01

We study the surface morphology and growth process of SiGe nanoislands on TiO2 films, deposited over Si (001) substrates by high power impulse magnetron sputtering, followed varying annealing parameters (i.e., 500–750 °C for 30 min to 20 h). Structural analysis was performed atomic force microscopy, scanning electron grazing incidence x-ray diffraction. Two structural schemes were taken into consideration, i.e., grown pre-annealed (scheme I) as-grown II). Photoluminescence (PL) structures...

10.1063/5.0011180 article EN Journal of Applied Physics 2020-08-26
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