A5100708006- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Reliability and Maintenance Optimization
- Quantum Dots Synthesis And Properties
- Thermal properties of materials
- Statistical Distribution Estimation and Applications
- Advanced Thermoelectric Materials and Devices
- Nanowire Synthesis and Applications
- Gas Sensing Nanomaterials and Sensors
- Chalcogenide Semiconductor Thin Films
- Probabilistic and Robust Engineering Design
- Graphene and Nanomaterials Applications
- Power Line Inspection Robots
- Hydraulic and Pneumatic Systems
- Plant Virus Research Studies
- Ferroelectric and Negative Capacitance Devices
- Electronic and Structural Properties of Oxides
- Polymer-Based Agricultural Enhancements
- Random lasers and scattering media
- Plasma Diagnostics and Applications
- Cavitation Phenomena in Pumps
- Plasma and Flow Control in Aerodynamics
- Advanced Battery Technologies Research
National University of Defense Technology
2016-2025
China Southern Power Grid (China)
2024
Northwest A&F University
2019
Ministry of Agriculture and Rural Affairs
2019
Nanjing University
2016-2017
Collaborative Innovation Center of Advanced Microstructures
2016
Institute of Microelectronics
2012
Chinese Academy of Sciences
2012
van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown tremendous potential for future applications due their unique electronic properties strong light–matter interaction. However, many important optoelectronic applications, such as broadband photodetection, are severely hindered by limited spectral range reduced...
Here, we demonstrated systematic experiments to understand the microscopic origin of laser irradiation induced controllable 2H-to-1T’ phase transition in few-layer MoTe<sub>2</sub>.
Abstract Semiconducting molybdenum ditelluride (2H‐MoTe 2 ), a fast‐emerging 2D material with an appropriate band gap and decent carrier mobility, is configured as field‐effect transistors the focus of substantial research interest, showing hole‐dominated ambipolar characteristics. Here, modulation few‐layer MoTe demonstrated utilizing magnesium oxide (MgO) surface charge transfer doping. By carefully adjusting thickness MgO film number layers, polarity from p‐type to n‐type can be reversely...
Abstract 2D materials with low‐symmetry exhibit anisotropic physical properties, making them promising candidates for various applications. However, the lack of matured synthesis methods in is still main obstacle to their future Given mature method transition metal dichalcogenides (TMDCs), manipulating anisotropy TMDCs becomes a way tune or trigger functional properties. Herein, first time, van der Waals symmetry engineering reported introduce in‐plane polarization MoS 2 through contact...
Abstract Polarization‐sensitive infrared (IR) photodetection plays an important role in fiber optic communication, environmental monitoring, and remote sensing imaging. Semiconductors with quasi‐1D crystal structures exhibit unique optical electrical properties due to their 1D carrier transport channels large surface area‐to‐volume ratio, offering the possibility of high‐performance photodetectors high photogain (G), polarization sensitivity photodetection. Herein, ultra‐broadband (405...
Abstract Anomalous photoresponse with negative photoconductance (NPC) is rarely observed which quite different from the common semiconductor positive (PPC) as light can induce additional carriers. NPC effect not widely studied because performance of limited and device fabrication uncontrollable. Here, a controllable way reported to fabricate an anomalous through asymmetric metal contact PdSe 2 . A mirror electrode‐enhanced vertical (VAC) designed. The VAC demonstrated in ultra‐broadband...
Graphene photodetectors are highly attractive owing to its ultra-fast and wide-range spectral response from visible infrared benefit the superior carrier mobility linear dispersion with zero bandgap of graphene. The application graphene however is seriously limited by low intrinsic responsivity in order ∼10 mA/W. Here, we demonstrate photogating field-effect transistors based on pure monolayer simple device structures. light absorption heavily n-doped silicon/silicon oxide (Si/SiO2)...
The gas sensor based on pristine graphene with conductance type was studied theoretically and experimentally. time response of measurements showed a quickly largely increased conductivity when the exposed to ammonia produced by bubble system water. However, desorption process in vacuum took more than 1 h which indicated that there larger number transferred carriers strong adsorption force between graphene. could be greatly shortened down about 2 min adding flow water-vapor-enriched air at...
The realization of p-n homojunctions, which can be achieved via spatially controlled carrier-type modulation, remains a challenge for two-dimensional transition metal dichalcogenides. Here, we report an effective method to tune intrinsic n-type few-layer MoSe2 p-type through controlling precisely the ultraviolet-ozone treatment time, attributed surface charge transfer from underlying MoOx (x < 3). resulting hole mobility and concentration are ∼20.1 cm2 V-1 s-1 ∼1.9 × 1012 cm-2, respectively,...
Broad-bandgap semiconductor-based solar-blind ultraviolet (SBUV) photodetectors have attracted considerable research interest because of their broad applications in missile plume tracking, flame detectors, environmental monitoring, and optical communications due to nature high sensitivity with low background radiation. Owing its light absorption coefficient, abundance, wide tunable bandgap 2-2.6 eV, tin disulfide (SnS2) has emerged as one the most promising compounds for application...
Abstract Driven by the unique linear dichroism feature of anisotropic two‐dimensional (2D) materials, much attempt has been made to introduce artificial anisotropy into isotropic 2D materials deliver polarization‐sensitive performance. However, those methods have not widely promoted because technical limitations. This paper reports on successful modulation structural symmetry WSe 2 through van der Waals (vdW) interlayer coupling. Correspondingly, both polarized Raman and photoluminescence...
Abstract Despite direct bandgap and other unique properties of monolayer (1L) MoS 2 , the low photoluminescence (PL) efficiency hinders radiative recombination excitons limits further development in optoelectronic devices. Recently, synergizing interlayer intralayer coupling heterostructures has achieved significant modulation light‐matter interaction through tailored band alignment, offering potential solution to obstacles faced by . Utilizing high work function characteristics CrOCl, a...
The photo-electrical properties of trilayer MoSe 2 nanoflakes, fabricated by mechanical exfoliation, were systematically studied in this paper. nanoflakes are n-type and possess a high gate modulation (On/Off ratio is larger than 10[Formula: see text] relatively carrier mobility (1.79[Formula: text]cm[Formula: text]. field effect transistor (FET) device shows sensitive photo response, photoresponsivity ([Formula: text][Formula: text]mA/W), quick response time text]ms), external quantum...
Abstract Within angle‐resolved polarized Raman spectroscopy (ARPRS) experiments, ensuring accurate configurations is crucial for obtaining reliable results, especially when dealing with anisotropic materials like CrOCl crystal structure and phonon properties. However, comprehensive understanding of phase‐dependent ARPRS the calibration phase angle on modes from a crystallographic perspective are still lacking. Herein, detailed investigation looked into photo‐phonon interaction in through...
2H phase Molybdenum ditelluride (MoTe2) is a layered two-dimensional (2D) semiconductor that has recently gained extensive attention for its intriguing properties, demonstrating great potential nanoelectronics and optoelectronics. Optimizing the electric contacts to MoTe2 critical step realizing high performance devices. Here, we demonstrate Co/hBN tunnel few-layer MoTe2. In sharp contrast p-type conduction of Co contacted MoTe2, devices show clear n-type transport properties. Our first...
Conventional reliability demonstration tests are becoming increasingly difficult to apply for high-reliability and long-lifetime products owing the excessive test duration, which conflicts with marketplace demands decreased development time. Accelerated degradation testing has been strongly recommended reduce time, but few studies employ this method demonstrations. In article, a methodology based on accelerated is developed demonstrate target case in model parameters plan design unknown....
Palladium diselenide (PdSe2) has been discovered as an intriguing two-dimensional (2D) semiconductor for its unique pentagonal crystalline structure, electrical and optical anisotropy, thickness-modulated band gap, robust air stability, high carrier mobility, demonstrating great potential in field-effect transistors (FETs), photodetectors, thermoelectric devices. Controlling the polarity contact Schottky barriers is of significance realizing high-performance PdSe2 optoelectronic Here, by...
The pressure control accuracy of electrohydraulic proportional relief valve (EPRV) is affected by steady flow force. Thus, this paper investigates the method designing a spool groove into turbine bucket profile to compensate for force maximally. influence on working EPRV analyzed. calculation model deduced. Moreover, computational fluid dynamics (CFD) established considering fitting clearance between and body. test bench built verify CFD model. designed in optimized basis response surface...